Datasheet

TSM1NB60
Taiwan Semiconductor
Document Number: DS_P0000038 1 Version: D1706
N-Channel Power MOSFET
600V, 1A, 10Ω
FEATURES
● Advanced planar process
● 100% avalanche tested
● Low R
DS(ON)
8Ω (Typ.)
● Low gate charge typical @ 6.1 nC (Typ.)
● Low Crss typical @4.2pF (Typ.)
APPLICATION
● Power Supply
● Lighting
● Charger
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V
DS
600
V
R
DS(on)
(max)
10
Ω
Q
g
6.1
nC
SOT-223
TO-251 (IPAK)
TO-252 (DPAK)
Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK), SOT-223 per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
IPAK/DPAK
SOT-223
UNIT
Drain-Source Voltage
V
DS
600
V
Gate-Source Voltage
V
GS
±30
V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
1
A
T
C
= 100°C
0.7
Pulsed Drain Current
(Note 2)
I
DM
4
A
Total Power Dissipation @ T
C
= 25°C
P
DTOT
39
2.1
W
Single Pulsed Avalanche Energy
(Note 3)
E
AS
5
mJ
Single Pulsed Avalanche Current
(Note 3)
I
AS
1
A
Peak Diode Recovery dv/dt
(Note 4)
dv/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
IPAK/DPAK
SOT-223
UNIT
Junction to Case Thermal Resistance
R
ӨJC
2.87
--
°C/W
Junction to Ambient Thermal Resistance
R
ӨJA
110
60
°C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.