Datasheet

TSM2314
20V N-Channel MOSFET
Document Number: DS_P0000056 1 Version: E15
SOT
-
23
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
20
33 @ V
GS
= 4.5V 4.9
40 @ V
GS
= 2.5V 4.4
100 @ V
GS
= 1.8V 2.9
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM2314CX RFG SOT-23 3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
4.9 A
Pulsed Drain Current, V
GS
@4.5V I
DM
15 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.0 A
Maximum Power Dissipation
Ta = 25
o
C
P
D
1.25
W
Ta = 75
o
C 0.8
Operating Junction Temperature T
J
+150 °C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
75
°C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
120 °C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Source
3. Drain