Datasheet

TSM260P02
Taiwan Semiconductor
Document Number: DS_P0000208 1 Version: C1807
P-Channel Power MOSFET
-20V, -6.5A, 26mΩ
FEATURES
● Fast switching
● Suitable for -1.8V Gate Drive Applications
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V
DS
-20
V
I
D
-6.5
A
R
DS(on)
(max)
V
GS
= -4.5V
26
mΩ
V
GS
= -2.5V
32
V
GS
= -1.8V
40
Q
g
19.5
nC
APPLICATION
● Battery Pack
● Portable Devices
SOT-26
SOT-23
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
±10
V
Continuous Drain Current
T
C
= 25°C
I
D
-6.5
A
T
C
= 100°C
-4.1
Pulsed Drain Current
(Note 1)
I
DM
-26
A
Total Power Dissipation
T
C
= 25°C
P
DTOT
1.56
W
Operating Junction Temperature
T
J
150
ºC
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Ambient Thermal Resistance
R
ӨJA
80
°C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. R
ӨJC
is guaranteed by design while
R
ӨCA
is determined by the user’s board design. R
ӨJA
is shown for single device operation on FR-4 PCB in still air.