Datasheet

TSM2N7002KCX
Taiwan Semiconductor
Document Number: DS_P0000068 1 Version: H1807
N-Channel Power MOSFET
60V, 300mA, 2Ω
FEATURES
● Low On-Resistance
● ESD Protected 2KV
● High Speed Switching
● Low Voltage Drive
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V
DS
60
V
R
DS(on)
(max)
V
GS
= 10V
2
Ω
V
GS
= 4.5V
4
Q
g
0.4
nC
APPLICATION
● Logic Level translators
● DC-DC Converter
SOT-23
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
(Note 1)
T
A
= 25°C
I
D
300
mA
T
A
= 100°C
180
Pulsed Drain Current
(Note 2)
I
DM
800
mA
Total Power Dissipation @ T
A
= 25°C
P
DTOT
300
mW
Single Pulsed Avalanche Energy
(Note 3)
E
AS
0.2
mJ
Single Pulsed Avalanche Current
(Note 3)
I
AS
2
A
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Ambient Thermal Resistance
R
ӨJA
350
°C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJC
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air