Datasheet

TSM4946D
60V Dual N-Channel MOSFET
1/6 Version: B09
SOP
-
8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● High-Side DC/DC Conversion
● Notebook
● Sever
Ordering Information
Part No. Package Packing
TSM4946DCS RL SOP-8 2.5Kpcs / 13” Reel
TSM4946DCS RLG SOP-8 2.5Kpcs / 13” Reel
Note: “G” denote for Green Product
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Continuous Drain Current I
D
4.5 A
Pulsed Drain Current I
DM
30 A
Continuous Source Current (Diode Conduction)
a,b
I
S
2 A
Maximum Power Dissipation
Ta = 25
o
C
P
D
2.4
W
Ta = 75
o
C 1.7
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JF
32
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
62.5
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
D
(A)
60
55 @ V
GS
= 10V 4.5
75 @ V
GS
= 4.5V 3.9
Block Diagram
Dual N-Channel MOSFET
Pin
Definition
:
1. Source 1 8. Drain 1
2. Gate 1 7. Drain 1
3. Source 2 6. Drain 2
4. Gate 2 5. Drain 2