Datasheet

TSM900N06
60V N-Channel Power MOSFET
1/8 Version: C1612
TO-251S
(IPAK SL)
TO-252
(DPAK)
Key Parameter Performance
Parameter
Value
Unit
V
DS
60
V
R
DS(on)
(max)
V
GS
= 10V
90
mΩ
V
GS
= 4.5V
100
Q
g
9.3
nC
SOT-223
Ordering Information
Part No.
Package
Packing
TSM900N06CH X0G
TO-251S
75pcs / Tube
TSM900N06CP ROG
TO-252
2.5kpcs / 13” Reel
TSM900N06CW RPG
SOT-223
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
IPAK
DPAK
SOT-223
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
(Note 1)
Tc=25°C
I
D
11
A
Tc=100°C
7
A
Pulsed Drain Current
(Note 1)
I
DM
44
A
Single Pulse Avalanche Energy
(Note 3)
E
AS
25
mJ
Single Pulse Avalanche Current
(Note 3)
I
AS
7
A
Total Power
Dissipation
@ T
C
=25°C
P
D
25
25
4.17
W
Derate above T
C
=25°C
0.2
0.2
0.014
W/°C
Operating Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-55 to +150
°C
Pin Definition:
1. Gate
2. Drain
3. Source