Datasheet

ManualsBrandsTE CONNECTIVITY ManualsDiodesPOLYZEN Zener diode Enclosure type (semiconductors) SMD Zener voltage 5.6 V Max. power (

RoHS Compliant, ELV Compliant

PolyZen Devices

RoHS Compliant, ELV Compliant

PolyZen devices are polymer-enhanced, precision Zener

diode micro-assemblies. They offer resettable protection

against multi-Watt fault events without the need for

multi-Watt heat sinks.

The Zener diode used for voltage clamping a PolyZen

micro-assembly was selected due to its relatively ﬂat

voltage vs. current response. This helps improve output

voltage clamping, even when input voltage is high and

diode currents are large.

An advanced feature of the PolyZen micro-assembly is

that the Zener diode is thermally coupled to a resistively

non-linear, PPTC (polymer positive temperature

coefﬁcient) layer. This PPTC layer is fully integrated into

the device and is electrically in series between V

and

the diode clamped V

OUT

This advanced PPTC layer responds to either extended

diode heating or overcurrent events by transitioning

from a low to high resistance state, also known as

“tripping.” A tripped PPTC will limit current and generate

voltage drop. It helps to protect both the Zener diode

and the follow-on electronics and effectively increases

the diode’s power handling capability.

The polymer-enhanced Zener diode helps protect

sensitive portable electronics from damage caused by

inductive voltage spikes, voltage transients, incorrect

power supplies and reverse bias. These devices are

particularly suitable for portable electronics and other

low-power DC devices.

• Stable Zener diode helps shield downstream

electronics from overvoltage and reverse bias

• Trip events shut out overvoltage and reverse

bias sources

• Analog nature of trip events helps minimize damage

from upstream inductive spikes

• Minimal power dissipation requirements

• Single component placement

• Overvoltage transient suppression

• Stable V

vs. fault current

• Time delayed, overvoltage trip

• Time delayed, reverse bias trip

• Multi-Watt power handling capability

• Integrated device construction

• RoHS compliant

• DC power port protection in portable electronics

• DC power port protection for systems using barrel

jacks for power input

• Internal overvoltage and transient suppression

• DC output voltage regulation

• Tablet PCs and portable electronics

PolyZen Devices

Polymer Protected Zener Diode

Beneﬁts Features

Applications

2013_CP_S05-PolyZen.indd 33 8/3/13 11:10 AM

Summary of content (11 pages)

PAGE 1
PolyZen Devices PolyZen Devices Polymer Protected Zener Diode PolyZen devices are polymer-enhanced, precision Zener diode micro-assemblies. They offer resettable protection against multi-Watt fault events without the need for multi-Watt heat sinks. The Zener diode used for voltage clamping a PolyZen micro-assembly was selected due to its relatively flat voltage vs. current response. This helps improve output voltage clamping, even when input voltage is high and diode currents are large.
PAGE 2
Figure PZ1 Typical Application Block Diagram for PolyZen Devices Power Supply Protected Electronics (External or Internal) 2 VIN 1 + PolyZen Device 3 GND VOUT RLOAD Regulated Output Protected Downstream Electronics Table PZ1 Electrical Characteristics for PolyZen Devices (Performance ratings @ 25°C unless otherwise specified) VZ(V) 5 Max VINT MAX IZt (A) IHOLD @ 20°C (A) RTyp (Ω) R1MAX (Ω) VINT MAX (V) IFLT MAX Test Current (A) Test Voltage (V) IFLT MAX (A) Part Number Min Typ ZEN05
PAGE 3
PolyZen Devices Figures PZ2-PZ9 Typical Performance Curves for PolyZen Devices - LS Series Figure PZ2 Figure PZ3 VOUT Peak vs. IFLT RMS (IOUT = 0) 20.0 A B C D E F F 18.0 VOUT Peak (V) 16.0 E 14.0 12.0 D Time-to-Trip vs. IFLT RMS (IOUT = 0) 10 = ZEN056V1yyA24LS = ZEN059V130A24LS = ZEN065V130A24LS = ZEN098V130A24LS = ZEN132V130A24LS = ZEN164V130A24LS Time-to-Trip (s) 22.0 10.0 8.0 C A B 6.
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Figures PZ10-PZ17 Typical Performance Curves for PolyZen Devices - CE Series Figure PZ10 Figure PZ11 VOUTPeak vs. I FLT RMS(IOUT=0) 18.0 B 16.0 A = ZEN056V130A24CE B = ZEN132V130A24CE A = ZEN056V130A24CE B = ZEN132V130A24CE 14.0 10 12.0 Time-to-Trip (s) VOUTPeak (V) Time-to-Trip vs. I FLT RMS (IOUT=0) 10.0 8.0 A 6.0 4.0 1 B 0.1 A 2.0 0.01 0.0 0 1 2 3 4 5 6 IFLT RMS (A) 7 8 9 0 10 1 2 4 5 6 7 8 9 10 IFLT RMS (A) Figure PZ12 Figure PZ13 VOUTPeak vs.
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PolyZen Devices Table PZ3 General Characteristics for PolyZen Devices Operating temperature range Storage temperature ESD withstand Diode capacitance Construction Figures PZ18-PZ22 -40° to +85°C -40° to +85°C 15kV 4200pF RoHS compliant Human body model Typical @ 1MHz, 1V RMS Basic Operation Examples for PolyZen Devices - LS Series Figure PZ18 Hot-Plug Response ZEN056V130A24LS vs.
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Figures PZ23-PZ30 Basic Operation Examples for PolyZen Devices - LS Series Figure PZ23 Figure PZ24 Typical Fault Response: ZEN132V130A24LS 24V, 2.0A Current Limited Source (IOUT=0) 30 A = VIN (V) B = VOUT (V) 25 Voltage (V) or Current (A) Voltage (V) or Current (A) Typical Fault Response: ZEN164V130A24LS 24V, 1.0A Current Limited Source (IOUT=0) 30 A = VIN (V) A C = IFLT (A) 20 B 15 10 5 0 C 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 A C = IFLT (A) 20 B 15 10 5 0 0.
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PolyZen Devices Figures PZ31-PZ35 Basic Operation Examples for PolyZen Devices - CE Series Figure PZ31 Hot-Plug Response ZEN056V130A24CE vs.
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Figures PZ36-PZ37 Basic Operation Examples for PolyZen Devices - CE Series Figure PZ36 Figure PZ37 Typical Fault Response: ZEN132V230A16CE 20V, 3A Current Limited Source (IOUT=0) 24 A 20 B 16 Voltage (V) or Current (A) Voltage (V) or Current (A) Typical Fault Response: ZEN132V260A16CE 20V, 3A Current Limited Source (IOUT=0) 24 A = VIN (V) B = VOUT (V) C = IOUT (A) 20 Cont’d 12 8 4 A = VIN (V) B = VOUT (V) C = IOUT (A) A B 16 12 8 4 C 0 0.00 0.05 5 0.10 Time (s) 0.15 C 0 0.00 0.
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PolyZen Devices Table PZ6 Pad Layout and Configuration Information for PolyZen Devices ZENxxxVyyyAzzLS Devices Pin Configuration (Top View) Pin Number Pin Name 1 VIN Pad Dimensions Pin Function VIN 0.94mm (0.037”) = Protected input to Zener diode 2 GND 2 GND GND = Ground 3 VOUT VOUT = Zener regulated voltage output 0.33mm (0.013”) 2.21mm (0.087”) VIN 1 0.94mm (0.037”) 3 VOUT 0.56mm (0.022”) 2.88mm (0.1135”) 0.56mm (0.022”) ZENxxxVyyyAzzCE Devices 2-0.50+/-0.
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Tape and Reel Specifications for PolyZen Devices in Millimeters Figure PZ39 EIA Referenced Taped Component Dimensions for PolyZen Devices in Millimeters (mm) Description ZENxxxVyyyAzzLS Devices ZENxxxVyyyAzzCE Devices A0 4.35 4.35 B0 4.35 5.35 K0 2.30 1.35 8.00 ø1.5 + 0.1 / -0.0 4.00Note 1 ø1.50 Min 0.35 ± 0.05 0.25 R 2.00 ± 0.05Note 2 A 1.75 ± 0.10 R 0.3 Max 5.50 ± 0.05Note 3 B0 12.0 ± 0.3 5 K0 A0 A 0.25 Notes: 1. 10 sprocket hole pitch cumulative tolerance ±0.2 2.
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ZENxxxVyyyAzzLS Devices Zener Diode Voltage Rating nnn = 056 (5.6V) nnn = 059 (5.9V) nnn = 065 (6.5V) nnn = 098 (9.8V) nnn = 134 (13.4V) nnn = 164 (16.4V) tnnn 12345 PolyZen Devices Part Marking System for PolyZen Devices Batch Number ZENxxxVyyyAzzCE Devices Markings Vz Hold Current 05613 5.6V 1.3A ##### 5 Batch Number Last 4 digits of batch number VVVII #### Notice : Information furnished is believed to be accurate and reliable.