Datasheet

ADS1675
SBAS416D –DECEMBER 2008–REVISED AUGUST 2010 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
All specifications are at T
A
= –40°C to +85°C, AVDD = 5V, DVDD = 3V, f
CLK
= 32MHz, V
REF
= +3V, and R
BIAS
= 7.5kΩ,
unless otherwise noted.
ADS1675
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DIGITAL FILTER CHARACTERISTICS (LOW-LATENCY PATH)
Bandwidth –3dB attenuation See the Low-Latency Filter section
Settling time Complete settling See Table 5
VOLTAGE REFERENCE INPUTS
Reference input voltage (V
REF
) V
REF
= (VREFP – VREFN) 2.75 3.0 3.5 V
VREFP 2.75 3.0 3.5 V
VREFN Short to AGND V
CLOCK (CLK)
V
IH
0.7AVDD AVDD V
V
IL
AGND 0.3AVDD V
DIGITAL INPUTS
V
IH
0.7DVDD DVDD V
V
IL
DGND 0.3DVDD V
Input leakage DGND < V
IN
< DVDD ±10 mA
CMOS OUTPUTS
V
OH
I
OH
= –2mA 0.8DVDD V
V
OL
I
OL
= 2mA 0.2DVDD V
LVDS OUTPUTS
|V
OD(SS)
| Steady-state differential output voltage magnitude 340 mV
Change in steady-state differential output voltage
Δ|V
OD(SS)
| ±50 mV
magnitude between logic states
V
OC(SS)
Steady-state common-mode voltage output 1.2 V
Change in steady-state common-mode output
Δ|V
OC(SS)
| ±50 mV
voltage between logic states
Peak-to-peak change in
V
OC(pp)
50 150 mV
common-mode output voltage
V
OY
or V
OZ
= 0V 3 mA
Short-circuit output current (I
OS
)
V
OD
= 0V 3 mA
High-impedance output current (I
OZ
) V
O
= 0V or +DVDD ±5 mA
Load 5 pF
POWER-SUPPLY REQUIREMENTS
AVDD 4.75 5.0 5.25 V
DVDD 2.85 3.0 3.15 V
AVDD current 70 74 mA
CMOS outputs, DVDD = 3V, DRATE = 011 53 59 mA
DVDD current
LVDS outputs, DVDD = 3V, DRATE = 101 70 74 mA
CMOS outputs, DRATE = 011,
510 545 mW
AVDD = 5V, DVDD = 3V
Power dissipation LVDS outputs, DRATE = 101,
575 600 mW
AVDD = 5V, DVDD = 3V
Power-down 5 mW
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