Datasheet

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Features

➤

Fast charge and conditioning of

nickel cadmium or nickel-metal

hydride batteries

➤

Hysteretic PWM switch-mode

current regulation or gated con

trol of an external regulator

➤

Easily integrated into systems

or used as a stand-alone charger

➤

Pre-charge qualification of tem

perature and voltage

➤

Direct LED outputs display

battery and charge status

➤

Fast-charge termination by

∆

temperature/

∆

time, -

∆

V, maxi-

mum voltage, maximum tem-

perature, and maximum time

➤ Optional top-off charge

General Description

The bq2003 Fast Charge IC provides

comprehensive fast charge control

functions together with high-speed

switching power control circuitry on a

monolithic CMOS device.

Integration of closed-loop current

control circuitry allows the bq2003

to be the basis of a cost-effective so

lution for stand-alone and system-

integrated chargers for batteries of

one or more cells.

Switch-activated discharge-before-

charge allows bq2003-based chargers

to support battery conditioning and

capacity determination.

High-efficiency power conversion is

accomplished using the bq2003 as a

hysteretic PWM controller for

switch-mode regulation of the charg-

ing current. The bq2003 may alterna-

tively be used to gate an externally

regulated charging current.

Fast charge may begin on applica

tion of the charging supply, replace

ment of the battery, or switch de

pression. For safety, fast charge is

inhibited unless/until the battery

temperature and voltage are within

configured limits.

Temperature, voltage, and time are

monitored throughout fast charge.

Fast charge is terminated by any of

the following:

Rate of temperature rise

(

∆

Negative delta voltage (-

∆

Maximum voltage

Maximum temperature

Maximum time

After fast charge, an optional top-off

phase is available. Constant-cur-

rent maintenence charge is provided

by an external trickle resistor.

Fast-Charge IC

bq2003

CCMD Charge command/select

DCMD Discharge command

DVEN -

∆

V enable/disable

Timer mode select 1

Timer mode select 2

TS Temperature sense

BAT Battery voltage

System ground

PN200301.eps

16-Pin DIP or SOIC

DIS

MOD

CHG

TEMP

MCV

TCO

SNS

CCMD

DCMD

DVEN

BAT

SNS Sense resistor input

TCO Temperature cutoff

MCV Maximum voltage

TEMP Temperature status

output

CHG Charging status output

MOD Charge current control

DIS Discharge control

5.0V

10% power

Pin Connections

Pin Names

SLUS095A - OCTOBER 1999 I

Summary of content (18 pages)

PAGE 1
bq2003 Fast-Charge IC Features General Description ➤ Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries ➤ Hysteretic PWM switch-mode current regulation or gated control of an external regulator The bq2003 Fast Charge IC provides comprehensive fast charge control functions together with high-speed switching power control circuitry on a monolithic CMOS device.
PAGE 2
bq2003 TCO Pin Descriptions CCMD, DCMD Input to set maximum allowable battery temperature. If the potential between TS and SNS is less than the voltage at the TCO input, then fast charge or top-off charge is terminated. Charge initiation and discharge-beforecharge control inputs These two inputs control the conditions that b e g i n a ne w cha r g e c y cl e a n d en a b le discharge-before-charge. See Table 1.
PAGE 3
bq2003 Functional Description the resistor connected to the positive battery terminal, and RB2 is the resistor connected to the negative battery terminal. See Figure 1. Figure 3 shows a state diagram and Figure 4 shows a block diagram of the bq2003. Note: This resistor-divider network input impedance to end-to-end should be at least 200kΩ and less than 1MΩ.
PAGE 4
bq2003 3. Discharge-Before-Charge The DCMD input is used to command discharge-beforecharge via the DIS output. Once activated, DIS becomes active (high) until VCELL falls below VEDV, at which time DIS goes low and a new fast charge cycle begins. See Table 1 for the conditions that initiate discharge-beforecharge. Discharge-before-charge is qualified by the same voltage and temperature conditions that qualify a new charge cycle start (see below).
PAGE 5
bq2003 Table 2. Fast-Charge Safety Time/Hold-Off/Top-Off Table Corresponding Fast-Charge Rate C/4 C/2 1C 2C 4C C/2 1C 2C 4C Note: TM1 Low Float High Low Float High Low Float High Typical Fast Charge and Top-Off Time Limits 360 180 90 45 23 180 90 45 23 TM2 Low Low Low Float Float Float High High High Typical -∆V/MCV Hold-Off Time (seconds) 137 820 410 200 100 820 410 200 100 Top-Off Rate Disabled Disabled Disabled Disabled Disabled C/16 C/8 C/4 C/2 Typical conditions = 25°C, VCC = 5.0V.
PAGE 6
bq2003 taken on the new battery is compared to ones taken before the original battery was removed and any that may have been taken while no battery was present. If the IC is configured for ∆T/∆t termination, this may result in a premature fast-charge termination on the newly inserted battery. Charge Status Indication Charge status is indicated by the CHG output. The state of the CHG output in the various charge cycle phases is shown in Figure 3 and illustrated in Figure 1.
PAGE 7
bq2003 New Charge Cycle Start or Discharge-Before-Charge Command VCELL > VMCV Battery Voltage? VCELL < VEDF Charge Pending VEDV < VCELL < VMCV Battery Temperature? VTEMP > VLTF or VTEMP < VHTF Trickle CHG = 1 3/8s high 1/8s low VCELL > VMCV VHTF < VTEMP < VLTF VEDV < VCELL < VMCV and VHTF < VTEMP < VLTF No Discharge-Before-Charge Commanced? Discharge CHG = 1 3/8s low 1/8s high VCELL > VMCV VCELL < VEDV Fast CHG = Low VCELL > VMCV t Hold-off period expired? Yes Battery Absent > 1.
PAGE 8
bq2003 OSC TEMP CHG TM1 TM2 TCO Timing Control TCO Check TS LTF Check Display Control VTS - VSNS CCMD DCMD DVEN VBAT - VSNS Charge Control State Machine A/D SNS EDV Check Discharge Control MOD Control MCV Check DIS MOD MCV BAT VCC VSS BD200301.eps Figure 4.
PAGE 9
bq2003 Absolute Maximum Ratings Symbol Parameter Minimum Maximum Unit VCC VCC relative to VSS -0.3 +7.0 V VT DC voltage applied on any pin excluding VCC relative to VSS -0.3 +7.0 V TOPR Operating ambient temperature 0 +70 °C TSTG Storage temperature -55 +125 °C TSOLDER Soldering temperature - +260 °C TBIAS Temperature under bias -40 +85 °C Note: Commercial 10 sec max. Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
PAGE 10
bq2003 Recommended DC Operating Conditions (TA = 0 to +70°C) Symbol Parameter Minimum Typical Maximum Unit Notes VCC Supply voltage 4.5 5.0 5.5 V VBAT Battery input 0 - VCC V VCELL BAT voltage potential 0 - VCC V VTS Thermistor input 0 - VCC V VTEMP TS voltage potential 0 - VCC V VMCV Maximum cell voltage 0.2 ∗ VCC - 0.4 ∗ VCC V VTCO Temperature cutoff 0.2 ∗ VCC - 0.4 ∗ VCC V Logic input high VCC - 1.0 - - V CCMD, DCMD, DVEN Logic input high VCC - 0.
PAGE 11
bq2003 Impedance Symbol Parameter Minimum Typical Maximum Unit RBAT Battery input impedance 50 - - MΩ RMCV MCV input impedance 50 - - MΩ RTCO TCO input impedance 50 - - MΩ RSNS SNS input impedance 50 - - MΩ RTS TS input impedance 50 - - MΩ Timing Symbol (TA = 0 to +70°C; VCC ± 10%) Parameter Minimum Typical Maximum Unit Notes tPW Pulse width for CCMD, DCMD pulse commands 1 - - µs Pulse start for charge or dischargebefore-charge dFCV Time base variation -1
PAGE 12
bq2003 PN: 16-Pin DIP Narrow 16-Pin PN (DIP Narrow) Dimension Minimum A 0.160 A1 0.015 B 0.015 B1 0.055 C 0.008 D 0.740 E 0.300 E1 0.230 e 0.300 G 0.090 L 0.115 S 0.020 All dimensions are in inches. Maximum 0.180 0.040 0.022 0.065 0.013 0.770 0.325 0.280 0.370 0.110 0.150 0.040 S: 16-Pin SOIC 16-Pin S (SOIC) D Dimension Minimum A 0.095 A1 0.004 B 0.013 C 0.008 D 0.400 E 0.290 e 0.045 H 0.395 L 0.020 All dimensions are in inches. B e E H A C .004 L A1 12 Maximum 0.105 0.012 0.020 0.013 0.415 0.
PAGE 13
bq2003 Data Sheet Revision History Change No. Page No. 5 2 Changed block diagram Changed diagram. 5 8 Added top-off values to Table 2. Added values. 6 All Revised and expanded format of this data sheet Clarification 7 9 TOPR Deleted industrial temperature range. 8 3 Corrected Table 1 Correction 8 5, 7 Corrected and expanded the explanation for maximum voltage conditions Clarification Notes: Description Changes 1–4: Please refer to the 1997 Data Book. Change 5 = Sept.
PAGE 14
PACKAGE OPTION ADDENDUM www.ti.
PAGE 15
PACKAGE OPTION ADDENDUM www.ti.com 7-Sep-2009 to Customer on an annual basis.
PAGE 16
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ2003S-NTR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1 BQ2003STR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.
PAGE 17
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ2003S-NTR SOIC DW 16 2000 367.0 367.0 38.0 BQ2003STR SOIC DW 16 2000 367.0 367.0 38.
PAGE 18
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