Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - battery management Charge management NiCd, NiMH PDIP 16 Through-hole

Features

➤

Fast charge and conditioning of

nickel cadmium or nickel-metal

hydride batteries

➤

Hysteretic PWM switch-mode

current regulation or gated con

trol of an external regulator

➤

Easily integrated into systems or

used as a stand-alone charger

➤

Pre-charge qualification of tem

perature and voltage

➤

Configurable, direct LED outputs

display battery and charge status

➤

Fast-charge termination by ∆ tem

perature/∆ time, peak volume de

tection, -∆V, maximum voltage,

maximum temperature, and maxi-

mum time

➤ Optional top-off charge and

pulsed current maintenance

charging

➤ Logic-level controlled low-power

mode (< 5µAstandby current)

General Description

The bq2004 Fast Charge IC pro

vides comprehensive fast charge con

trol functions together with high-speed

switching power control circuitry on a

monolithic CMOSdevice.

Integration of closed-loop current

control circuitry allows the bq2004

to be the basis of a cost-effective so

lution for stand-alone and system-

integrated chargers for batteries of

one or more cells.

Switch-activated discharge-before-

charge allows bq2004-based chargers

to support battery conditioning and

capacity determination.

High-efficiency power conversion is

accomplished using the bq2004 as a

hysteretic PWM controller for

switch-mode regulation of the charg-

ing current. The bq2004 may alterna-

tively be used to gate an externally

regulated charging current.

Fast charge may begin on applica-

tion of the charging supply, replace-

ment of the battery, or switch de

pression. For safety, fast charge is

inhibited unless/until the battery

temperature and voltage are within

configured limits.

Temperature, voltage, and time are

monitored throughout fast charge.

Fast charge is terminated by any of

the following:

Rate of temperature time

(

∆

Peak voltage detection (PVD)

Negative delta voltage (-

∆

Maximum voltage

Maximum temperature

Maximum time

After fast charge, optional top-off

and pulsed current maintenance

phases are available.

Fast-Charge IC

bq2004

DCMD Discharge command

DSEL Display select

VSEL Voltage termination

select

Timer mode select 1

Timer mode select 2

TCO Temperature cutoff

TS Temperature sense

BAT Battery voltage

PN2004E01.eps

16-Pin Narrow DIP

or Narrow SOIC

INH

DIS

MOD

LED

SNS

DCMD

DSEL

VSEL

TCO

BAT

SNS Sense resistor input

LED

Charge status output 1

LED

Charge status output 2

System ground

5.0V

10% power

MOD Charge current control

DIS Discharge control

output

INH

Charge inhibit input

Pin Connections

SLUS063B–APRIL 2005 H

Pin Names

Summary of content (21 pages)

PAGE 1
bq2004 Fast-Charge IC Features General Description ➤ Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004 Fast Charge IC provides comprehensive fast charge control functions together with high-speed switching power control circuitry on a monolithic CMOS device.
PAGE 2
bq2004 SNS Pin Descriptions DCMD SNS controls the switching of MOD based on an external sense resistor in the current path of the battery. SNS is the reference potential for both the TS and BAT pins. If SNS is connected to VSS, then MOD switches high at the beginning of charge and low at the end of charge. Discharge-before-charge control input The DCMD input controls the conditions that enable discharge-before-charge. DCMD is pulled up internally.
PAGE 3
bq2004 Functional Description Discharge-Before-Charge Figure 3 shows a block diagram and Figure 4 shows a state diagram of the bq2004. The DCMD input is used to command discharge-beforecharge via the DIS output. Once activated, DIS becomes active (high) until VCELL falls below VEDV, at which time DIS goes low and a new fast charge cycle begins. Battery Voltage and Temperature Measurements The DCMD input is internally pulled up to VCC (its inactive state).
PAGE 4
bq2004 Discharge Charge Pending* Fast Charging Top-Off Pulse-Trickle (Optional) (Optional) (Pulse-Trickle) DIS 260 s 260 s Switch-mode MOD Configuration or 2080 s 260 s Note* 2080 s Note* 260 s External MOD Regulation (SNS Grounded) Mode 1, LED2 Status Output Mode 1, LED1 Status Output Mode 2, LED2 Status Output Mode 2, LED1 Status Output Mode 3, LED2 Status Output Mode 3, LED1 Status Output Battery within temperature/voltage limits. Battery discharged to 0.4 * VCC.
PAGE 5
bq2004 The valid temperature range is VHTF < VTEMP < VLTF, where: Each sample is an average of voltage measurements taken 57µs apart. The IC takes 32 measurements in PVD mode and 16 measurements in -∆V mode. The resulting sample periods (9.17ms and 18.18ms, respectively) filter out harmonics centered around 55Hz and 109Hz. This technique minimizes the effect of any AC line ripple that may feed through the power supply from either 50Hz or 60Hz AC sources. Tolerance on all timing is ±16%. VLTF = 0.
PAGE 6
bq2004 top-off is enabled and C/32 when top-off is disabled. Both pulse trickle and top-off may be disabled by tying TM1 and TM2 to VSS. and enforced again on the top-off phase, if selected. There is no time limit on the trickle-charge phase. Top-off Charge Charge Status Indication An optional top-off charge phase may be selected to follow fast charge termination for the C/2 through 4C rates.
PAGE 7
bq2004 VSNSLO = 0.04 ∗ VCC ± 25mV If the voltage at the SNS pin is less than VSNSLO, the MOD output is switched high to pass charge current to the battery. VSNSHI = 0.05 ∗ VCC ± 25mV When used to gate an externally regulated current source, the SNS pin is connected to VSS, and no sense resisitor is required. When the SNS voltage is greater than VSNSHI, the MOD output is switched low—shutting off charging current to the battery. Table 2.
PAGE 8
bq2004 New Charge Cycle Started by Any One of: Rising Edge on DCMD VCC Rising to Valid Level Yes Battery Replacement (VCELL Falling through VMCV) DCMD Tied to Ground? Inhibit (INH) Released No VEDV < VCELL < VMCV Charge Pending VCELL < VEDV Battery Voltage? VCELL < VEDV VCELL > VMCV DischargeBefore-Charge VCELL > VMCV VTEMP > VLTF or VTEMP < VHTF Pulse Trickle Charge Battery Temperature? VCELL > VMCV VHTF < VTEMP < VLTF* Battery Absent VEDV < VCELL < VMCV and VHTF < VTEMP < VLTF* Fast Cha
PAGE 9
bq2004 Absolute Maximum Ratings Minimum Maximum Unit VCC Symbol VCC relative to VSS -0.3 +7.0 V VT DC voltage applied on any pin excluding VCC relative to VSS -0.3 +7.0 V TOPR Operating ambient temperature -20 +70 °C TSTG Storage temperature -55 +125 °C TSOLDER Soldering temperature - +260 °C TBIAS Temperature under bias -40 +85 °C Note: Parameter VSNSHI VSNSLO Commercial 10 sec max. Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
PAGE 10
bq2004 Recommended DC Operating Conditions (TA = TOPR) Symbol Condition Minimum Typical Maximum Unit Notes VCC Supply voltage 4.5 5.0 5.5 V VBAT Battery input 0 - VCC V VCELL BAT voltage potential 0 - VCC V VTS Thermistor input 0 - VCC V VTEMP TS voltage potential 0 - VCC V VTS - VSNS VTCO Temperature cutoff 0.2 * VCC - 0.4 * VCC V Valid ∆ T/∆ t range Logic input high 2.0 - - V DCMD, INH Logic input high VCC - 0.
PAGE 11
bq2004 Impedance Symbol Parameter Minimum Typical Maximum Unit RBAT Battery input impedance 50 - - MΩ RTS TS input impedance 50 - - MΩ RTCO TCO input impedance 50 - - MΩ RSNS SNS input impedance 50 - - MΩ Timing Symbol (TA = 0 to +70°C; VCC ±10%) Parameter Minimum Typical Maximum Unit tPW Pulse width for DCMD and INH pulse command 1 - - µs Pulse start for charge or discharge before charge dFCV Time base variation -16 - 16 % VCC = 4.75V to 5.
PAGE 12
bq2004 Data Sheet RevisionHistory Change No. Page No. 1 10 Standby current ISB Was 5 A max; is 1 A max 2 9 VBSNSLO Rating Was: VSNSHI - (0.01 * V CC) Is: 0.
PAGE 13
bq2004 16-Pin DIP Narrow (PN) 16-Pin PN (0.300" DIP) Inches 13 Millimeters Dimension Min. Max. Min. Max. A 0.160 0.180 4.06 4.57 A1 0.015 0.040 0.38 1.02 B 0.015 0.022 0.38 0.56 B1 0.055 0.065 1.40 1.65 C 0.008 0.013 0.20 0.33 D 0.740 0.770 18.80 19.56 8.26 E 0.300 0.325 7.62 E1 0.230 0.280 5.84 7.11 e 0.300 0.370 7.62 9.40 G 0.090 0.110 2.29 2.79 L 0.115 0.150 2.92 3.81 S 0.020 0.040 0.51 1.
PAGE 14
bq2004 16-Pin SOIC Narrow (SN) 16-Pin SN (0.150" SOIC) Inches D e B E H A C A1 .004 L 14 Millimeters Dimension Min. Max. Min. Max. A 0.060 0.070 1.52 1.78 A1 0.004 0.010 0.10 0.25 B 0.013 0.020 0.33 0.51 C 0.007 0.010 0.18 0.25 D 0.385 0.400 9.78 10.16 E 0.150 0.160 3.81 4.06 e 0.045 0.055 1.14 1.40 H 0.225 0.245 5.72 6.22 L 0.015 0.035 0.38 0.
PAGE 15
PACKAGE OPTION ADDENDUM www.ti.
PAGE 16
PACKAGE OPTION ADDENDUM www.ti.com 26-Mar-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties.
PAGE 17
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device BQ2004SNTR Package Package Pins Type Drawing SOIC D 16 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 16.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 10.3 2.1 8.0 W Pin1 (mm) Quadrant 16.
PAGE 18
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ2004SNTR SOIC D 16 2500 367.0 367.0 38.
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