Datasheet

bq24100, bq24103, bq24103A
bq24104, bq24105, bq24108, bq24109
bq24113, bq24113A, bq24115
www.ti.com SLUS606O –JUNE 2004–REVISED MARCH 2010
ELECTRICAL CHARACTERISTICS (continued)
T
J
= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SLEEP COMPARATOR
V
CC
≤ V
IBAT
V
CC
≤ V
IBAT
2.3 V ≤ V
I(OUT)
≤ V
OREG,
for 1 or 2 cells
+5 mV +75 mV
V
SLP-ENT
Sleep-mode entry threshold V
V
I(OUT)
= 12.6 V, R
IN
= 1 kΩ V
CC
≤ V
IBAT
V
CC
≤ V
IBAT
bq24105/15
(1)
-4 mV +73 mV
V
SLP-EXIT
Sleep-mode exit hysteresis, 2.3 V ≤ V
I(OUT)
≤ V
OREG
40 160 mV
V
CC
decreasing below threshold,
t
FALL
= 100 ns, 10-mV overdrive, 5 ms
PMOS turns off
t
dg-SLP
Deglitch time for sleep mode
V
CC
decreasing below threshold,
t
FALL
= 100 ns, 10-mV overdrive, 20 30 40 ms
STATx pins turn off
UVLO
V
UVLO-ON
IC active threshold voltage V
CC
rising 3.15 3.30 3.50 V
IC active hysteresis V
CC
falling 120 150 mV
PWM
7 V ≤ V
CC
≤ V
CC(max)
400
Internal P-channel MOSFET on-resistance
4.5 V ≤ V
CC
≤ 7 V 500
mΩ
7 V ≤ V
CC
≤ V
CC(max)
130
Internal N-channel MOSFET on-resistance
4.5 V ≤ V
CC
≤ 7 V 150
f
OSC
Oscillator frequency 1.1 MHz
Frequency accuracy –9% 9%
D
MAX
Maximum duty cycle 100%
D
MIN
Minimum duty cycle 0%
t
TOD
Switching delay time (turn on) 20 ns
t
syncmin
Minimum synchronous FET on time 60 ns
Synchronous FET minimum current-off
50 400 mA
threshold
(2)
BATTERY DETECTION
Battery detection current during time-out
I
DETECT
V
I(BAT)
< V
OREG
– V
RCH
2 mA
fault
I
DISCHRG1
Discharge current V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
400 mA
t
DISCHRG1
Discharge time V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
1 s
I
WAKE
Wake current V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
2 mA
t
WAKE
Wake time V
SHORT
< V
I(BAT)
< V
OREG
– V
RCH
0.5 s
Begins after termination detected,
I
DISCHRG2
Termination discharge current 400 mA
V
I(BAT)
≤ V
OREG
t
DISCHRG2
Termination time 262 ms
OUTPUT CAPACITOR
Required output ceramic capacitor range
C
OUT
from SNS to PGND, between inductor and 4.7 10 47 mF
R
SNS
Required SNS capacitor (ceramic) at SNS
C
SNS
0.1 mF
pin
PROTECTION
Threshold over V
OREG
to turn off P-channel
V
OVP
OVP threshold voltage MOSFET, STAT1, and STAT2 during charge 110 117 121 %V
O(REG)
or termination states
I
LIMIT
Cycle-by-cycle current limit 2.6 3.6 4.5 A
V
SHORT
Short-circuit voltage threshold, BAT V
I(BAT)
falling 1.95 2 2.05 V/cell
I
SHORT
Short-circuit current V
I(BAT)
≤ V
SHORT
35 65 mA
T
SHTDWN
Thermal trip 165 °C
Thermal hysteresis 10 °C
(1) For bq24105 and bq24115 only. R
IN
is connected between IN and PGND pins and needed to ensure sleep entry.
(2) N-channel always turns on for ~60 ns and then turns off if current is too low.
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Product Folder Link(s): bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A
bq24115