Datasheet

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ELECTRICAL CHARACTERISTICS
bq24314
bq24316
SLUS763C – JULY 2007 – REVISED OCTOBER 2007
over junction temperature range 0 ° C ≤ T
J
≤ 125 ° C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IN
Under-voltage lock-out, input
V
UVLO
CE = Low, V
IN
increasing from 0V to 3V 2.6 2.7 2.8 V
power detected threshold
V
HYS-UVLO
Hysteresis on UVLO CE = Low, V
IN
decreasing from 3V to 0V 200 260 300 mV
Deglitch time, input power CE = Low. Time measured from V
IN
0V → 5V 1 μ s rise-time,
T
DGL(PGOOD)
8 ms
detected status to output turning ON
CE = Low, No load on OUT pin,
I
DD
Operating current 400 600 μ A
V
IN
= 5V, R
ILIM
= 25k Ω
I
STDBY
Standby current CE = High, V
IN
= 5.0V 65 95 μ A
INPUT TO OUTPUT CHARACTERISTICS
VDO Drop-out voltage IN to OUT CE = Low, V
IN
= 5V, I
OUT
= 1A 170 280 mV
INPUT OVERVOLTAGE PROTECTION
Input overvoltage bq24314 5.71 5.85 6.00 V
V
OVP
protection CE = Low, V
IN
increasing from 5V to 7.5V
bq24316
6.60 6.80 7.00 V
threshold
t
PD(OVP)
Input OV propagation delay
(1)
CE = Low 1 μ s
V
HYS-OVP
Hysteresis on OVP CE = Low, V
IN
decreasing from 7.5V to 5V 25 60 110 mV
Recovery time from input CE = Low, Time measured from
t
ON(OVP)
8 ms
overvoltage condition V
IN
7.5V → 5V, 1 μ s fall-time
INPUT OVERCURRENT PROTECTION
Input overcurrent protection
I
OCP
300 1500 mA
threshold range
Input overcurrent protection CE = Low, R
ILIM
= 25k Ω
I
OCP
930 1000 1070 mA
threshold
Blanking time, input overcurrent
t
BLANK(OCP)
176 μ s
detected
Recovery time from input
t
REC(OCP)
64 ms
overcurrent condition
BATTERY OVERVOLTAGE PROTECTION
Battery overvoltage protection CE = Low, V
IN
> 4.4V
BV
OVP
4.30 4.35 4.4 V
threshold
V
HYS-BOVP
Hysteresis on BV
OVP
CE = Low, V
IN
> 4.4V 200 275 320 mV
DSG V
BAT
= 4.4V, T
J
= 25 ° C
10
Package
Input bias current
I
VBAT
nA
on VBAT pin
DSJ V
BAT
= 4.4V, T
J
= 85 ° C
10
Package
Deglitch time, battery overvoltage CE = Low, V
IN
> 4.4V. Time measured from V
VBAT
rising from
T
DGL(BOVP)
176 μ s
detected 4.1V to 4.4V to FAULT going low.
THERMAL PROTECTION
T
J(OFF)
Thermal shutdown temperature 140 150 ° C
T
J(OFF-HYS)
Thermal shutdown hysteresis 20 ° C
LOGIC LEVELS ON CE
V
IL
Low-level input voltage 0 0.4 V
V
IH
High-level input voltage 1.4 V
I
IL
Low-level input current V
CE
= 0V 1 μ A
I
IH
High-level input current V
CE
= 1.8V 15 μ A
LOGIC LEVELS ON FAULT
V
OL
Output low voltage I
SINK
= 5mA 0.2 V
I
HI-Z
Leakage current, FAULT pin HI-Z V
FAULT
= 5V 10 μ A
(1) Not tested in production. Specified by design.
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