Datasheet

ELECTRICAL CHARACTERISTICS
bq24380
bq24381
bq24382
www.ti.com ......................................................................................................................................................... SLUS805B – APRIL 2008 – REVISED MARCH 2009
Over junction temperature range -40 ° C ≤ T
J
≤ 125 ° C and recommended supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IN
Undervoltage lock-out, input power
UVLO CE = LO or HI, V
IN
: 0 V → 3 V 2.5 2.8 V
detected threshold
V
hys(UVLO)
Hysteresis on UVLO CE = LO or HI, V
IN
: 3 V → 0 V 200 300 mV
CE = LO or HI. Time measured from
t
DGL(PGOOD)
Deglitch time, input power detected status 8 ms
V
IN
0 V → 5 V 1- µ s rise-time
bq24380 250
CE = LO, no load on OUT pin,
I
DD
Operating current bq24381 300 µ A
V
IN
= 5 V
bq24382 300
I
STDBY
Standby current CE = HI, V
IN
= 5.5 V 100 µ A
INPUT-TO-OUTPUT CHARACTERISTICS
V
DO
Dropout voltage IN to OUT CE = LO, V
IN
= 5 V, I
(OUT)
= 1 A 280 mV
I
OFF
Q1 off-state leakage current CE = HI, V
IN
= 5.5 V 10 µ A
INPUT OVERVOLTAGE PROTECTION
bq24380 5.3 5.5 5.7
V
O(REG)
Output voltage CE = LO, V
IN
= 6 V bq24381 4.8 5 5.2 V
bq24382 4.8 5 5.2
bq24380 6.1 6.3 6.5
V
OVP
Input overvoltage protection threshold CE = LO, V
IN
: 5 V → 8 V bq24831 6.88 7.1 7.31 V
bq24382 10.17 10.5 10.83
CE = LO or HI, V
IN
: 7 V → 5 V bq24380 25 110
V
hys(OVP)
Hysteresis on OVP bq24831 25 120 mV
CE = LO or HI, V
IN
: 8 V → 5 V
bq24382 150 300
t
PD(OVP)
(1)
Input OV propagation delay V
IN
: 5 V → 10 V 200 ns
CE = LO. Time measured from
t
REC(OVP)
Recovery time from input overvoltage condition 8 ms
V
IN
: 7 V → 5 V, 1- µ s fall-time
OUTPUT SHORT-CIRCUIT PROTECTION (only at start-up)
I
O(SC)
Short-circuit detection threshold 3 V < V
IN
< V
OVP
- V
hys(OVP)
1.3 1.5 1.7 A
t
REC(SC)
Retry interval if short-circuit detected 64 ms
BATTERY OVERVOLTAGE PROTECTION
BV
OVP
Battery overvoltage protection threshold V
IN
> 4.5 V, CE = LO 4.3 4.35 4.4 V
V
hys(BVovp)
Hysteresis on BV
(OVP)
V
IN
> 4.5 V, CE = LO 200 320 mV
I
(VBAT)
Input bias current on VBAT pin T
J
= 25 ° C 10 nA
V
IN
> 4.5 V, CE = LO, Time measured from
t
DGL(BVovp)
Deglitch time, battery overvoltage detected V
VSAT
rising from 4.1 V to 4.4 V to FAULT 176 µ s
going low.
THERMAL PROTECTION
T
J(OFF)
Thermal shutdown temperature 140 150 ° C
T
J(OFF-HYS)
Thermal shutdown hysteresis 20 ° C
LOGIC LEVELS ON CE
V
IL
Logic LOW input voltage 0 0.4 V
V
IH
Logic HIGH input voltage 1.4 V
I
IL
1 µ A
I
IH
V
CE
= 1.8 V 15 µ A
LOGIC LEVELS ON FAULT
V
OL
Output LOW voltage I
SINK
= 5 mA 0.2 V
I
lkg
Off-state leakage current, HI-Z V
FAULT
= 5 V 10 µ A
(1) Not tested. Specified by design
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