Datasheet

bq24450
SLUS929C –APRIL 2009– REVISED FEBRUARY 2012 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
DEVICE PACKAGE PACKING ORDERABLE PART NUMBER MARKING
Tube of 50 bq24450D bq24450D
SOIC (D)
Reel of 2500 bq24450DR bq24450D
ABSOLUTE MAXIMUM RATINGS
(1) (2) (3)
over operating free-air temperature range (unless otherwise noted)
VALUE UNIT
IN –0.3 to 40 V
PGOOD, STAT1, STAT2, ISNS –0.3 to 40 V
Input Voltage
VFB, IFB, ISNSP, ISNSM –0.3 to 40 V
BSTOP –0.3 to 40 V
Voltage PRE-CHG (with respect to IN) –32 V
ISNS 80 mA
Input Current
STAT1, STAT2, PGOOD 20 mA
Output Current PRE-CHG –40 mA
Input Current DRVC 80 mA
Output Current DRVE –80 mA
Power Dissipation at T
A
= 25°C 1000 mW
Junction temperature, T
J
–40 to 150 °C
Storage temperature, T
STG
–65 to 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the ground terminal (pin 6) unless otherwise noted.
(3) Positive currents are into, and negative currents out of, the specified terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNITS
V
IN
IN voltage range 5 40 V
I
STAT1
, I
STAT2
, I
PGOOD
Input current, open-collector status pins 5 mA
I
ISNS
Input current, open-collector ISNS comparator output 25 mA
T
J
Junction Temperature –40 70 °C
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