Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - power management - special purpose 330 nA QFN 16 (3x3)

5 6 7 8

16 15 14 13

HVR

BST

STOR

VSTOR

VBAT_OK

bq25504

Solar

Cell

OC1

OC2

REF

OV1

OV2

UV1

UV2

OK1

OK2

OK3

Battery

SYSTEM

LOAD

VSS

VIN_DC

AVSS

VOC_SAMP

VREF_SAMP

OT_PROG VBAT_OV VRDIV VBAT_UV

LBST VSTOR VBAT VSS

OK_HYST

OK_PROG

VBAT_OK

FLTR

bq25504

www.ti.com

SLUSAH0A –OCTOBER 2011–REVISED SEPTEMBER 2012

Ultra Low Power Boost Converter with Battery Management for Energy Harvester

Applications

Check for Samples: bq25504

FEATURES

• Ultra Low Power With High Efficiency DC/DC • Battery Status Output

Boost Converter/Charger

– Battery Good Output Pin

– Continuous Energy Harvesting From Low

– Programmable Threshold and Hysteresis

Input Sources: V

≥ 80 mV(Typical)

– Warn Attached Microcontrollers of Pending

– Ultra Low Quiescent Current: I

< 330 nA

Loss of Power

(Typical)

– Can be Used to Enable/Disable System

– Cold-Start Voltage: V

≥ 330 mV (Typical)

Loads

• Programmable Dynamic Maximum Power Point

Tracking (MPPT) APPLICATIONS

– Integrated Dynamic Maximum Power Point

• Energy Harvesting

Tracking for Optimal Energy Extraction

• Solar Charger

From a Variety of Energy Generation

• Thermal Electric Generator (TEG) Harvesting

Sources

• Wireless Sensor Networks (WSN)

– Input Voltage Regulation Prevents

• Industrial Monitoring

Collapsing Input Source

• Environmental Monitoring

• Energy Storage

• Bridge and Structural Health Monitoring (SHM)

– Energy can be Stored to Re-Chargeable Li-

• Smart Building Controls

ion Batteries, Thin-film Batteries, Super-

Capacitors, or Conventional Capacitors

• Portable and Wearable Health Devices

• Battery Charging and Protection

• Entertainment System Remote Controls

– User Programmable Undervoltage and

Overvoltage Levels

– On-Chip Temperature Sensor with

Programmable Overtemperature Shutoff

DESCRIPTION

The bq25504 is the first of a new family of intelligent integrated energy harvesting Nano-Power management

solutions that are well suited for meeting the special needs of ultra low power applications. The product is

specifically designed to efficiently acquire and manage the microwatts (µW) to miliwatts (mW) of power

generated from a variety of DC sources like photovoltaic (solar) or thermal electric generators. The bq25504 is

the first device of its kind to implement a highly efficient boost converter/charger targeted toward products and

systems, such as wireless sensor networks (WSN) which have stringent power and operational demands. The

design of the bq25504 starts with a DCDC boost converter/charger that requires only microwatts of power to

begin operating.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (25 pages)

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bq25504 www.ti.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DESCRIPTION CONTINUED Once started, the boost converter/charger can effectively extract power from low voltage output harvesters such as thermoelectric generators (TEGs) or single or dual cell solar panels.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 THERMAL INFORMATION bq25504 THERMAL METRIC (1) (2) θJA Junction-to-ambient thermal resistance 48.5 θJCtop Junction-to-case (top) thermal resistance 63.9 θJB Junction-to-board thermal resistance 22 ψJT Junction-to-top characterization parameter 1.8 ψJB Junction-to-board characterization parameter 22 θJCbot Junction-to-case (bottom) thermal resistance 6.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for conditions of VIN_DC = 1.2V, VBAT = VSTOR = 3V. External components LBST = 22 µH, CHVR = 4.7 µF CSTOR= 4.7 µF. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 1 5 nA 80 nA BATTERY MANAGEMENT VBAT = 2.1 V; VBAT_UV = 2.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 DEVICE INFORMATION RGT PACKAGE (TOP VIEW) 16 15 LBST VSTOR ` 14 13 VBAT VSS 1 VSS 2 VIN_DC 3 VOC_SAMP OK_PROG 10 VREF_SAMP OK_HYST 9 AVSS 12 VBAT_OK 11 bq25504 4 OT_PROG VBAT_OV VRDIV VBAT_UV 5 6 7 8 Figure 1. bq25504 3mm x 3mm QFN-16 Package PIN FUNCTIONS PIN NO.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com TYPICAL APPLICATION CIRCUITS VIN_DC = 1.2 V, CSTOR= 4.7 µF, LBST= 22 µH, CHVR= 4.7 µF, CREF= 10 nF, TSD_PROTL (65°C), MPPT (VOC) = 80% VBAT_OV = 3.1 V, VBAT_UV = 2.2 V, VBAT_OK = 2.4 V, VBAT_OK_HYST = 2.8 V, ROK1 = 4.42 MΩ, ROK2 = 4.22 MΩ, ROK3 = 1.43 MΩ, ROV1 = 5.9 MΩ, ROV2 = 4.02 MΩ, RUV1= 5.6 MΩ, RUV2 = 4.42 MΩ, ROC1= 15.62 MΩ, ROC2 = 4.42 MΩ (1) LBST CFLTR (2) CSTOR 0.1µF 4.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 VIN_DC = 0.5 V, CSTOR = 4.7 µF, LBST = 22 µH, CHVR = 4.7 µF, CREF = 10 nF, TSD_PROTH (120°C), MPPT (VOC) = 50% VBAT_OV = 4.2 V, VBAT_UV = 3.2 V, VBAT_OK = 3.5 V, VBAT_OK_HYST = 3.7 V, ROK1 = 3.32 MΩ, ROK2 = 6.12 MΩ, ROK3 = 0.542 MΩ, ROV1 = 4.42 MΩ, ROV2 = 5.62 MΩ, RUV1 = 3.83 MΩ, RUV2 = 6.12 MΩ, ROC1 = 10 MΩ, ROC2 = 10 MΩ (1) L BST CFLTR (2) CSTOR 0.1µF 4.7 µF (min) 22µH Battery(>100µF) VSTOR CHVR 4.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com VIN_DC = 1.2 V, CSTOR = 4.7 µF, LBST = 22 µH, CHVR = 4.7 µF, TSD_PROTL (65°C), MPPT (VOC) = Disabled VBAT_OV = 3.3 V, VBAT_UV = 2.2 V, VBAT_OK = 2.8 V, VBAT_OK_HYST = 3.1 V, ROK1 = 3.97 MΩ, ROK2 = 5.05 MΩ, ROK3 = 0.976 MΩ, ROV1 = 5.56 MΩ, ROV2 = 4.48 MΩ, RUV1 = 5.56 MΩ, RUV2 = 4.42 MΩ (1) LBST CFLTR (2) CSTOR 0.1µF 4.7 µF (min) Primary Cell 22 µH Battery(>100 µF) VSTOR CHVR 4.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 HIGH-LEVEL FUNCTIONAL BLOCK DIAGRAM LBST VSTOR VBAT VSS Boost Charge Controller AVSS VSS Cold-Start Unit VIN_DC Enable Enable VBAT_OK Interrupt VOC_SAMP OK_PROG BAT_SAVE MPPT Controller Vref VREF_SAMP OT Battery Threshold Control OK OK_HYST UV OV Temperature Sensing Element Vref Bias Reference and Oscillator Vref OT_PROG VBAT_OV VRDIV VBAT_UV Figure 5.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS Spacer 100 100 IIN = 10µA 80 80 70 70 60 50 40 30 60 50 40 30 20 VSTOR = 1.8V VSTOR = 3V VSTOR = 5.5V 10 0 −10 IIN = 100µA 90 Efficiency (%) Efficiency (%) 90 VSTOR = 3.3 V VSTOR = 1.8 V VSTOR = 5.5 V 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Input Voltage (V) G001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 Input Voltage (V) G002 Figure 6.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 TYPICAL CHARACTERISTICS (continued) 80 1000 VIN = 0.2V 900 800 VSTOR Current (nA) Efficiency (%) 70 60 50 40 VSTOR = 3V VSTOR = 1.8V VSTOR = 5.5V 30 20 0.01 0.1 1 Input Current (mA) 10 700 600 500 400 300 VSTOR = 1.8V VSTOR = 3V VSTOR = 4V 200 100 0 −60 100 G007 Figure 12. Efficiency vs Input Current −40 −20 0 20 40 60 Temperature (°C) 80 100 120 G008 Figure 13.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) VIN = 1 V, RIN = 20 W, VBAT = 3.1 V, RBAT = 100 mW VIN = 1 V, RIN = 20 W, VBAT = 2.5 V, RBAT = 100 mW Figure 18. Example of PFM Switching Converter Waveform VIN = 1 V, RIN = 20 W, VBAT = 1.9 V, RBAT = 100 mW VIN = 1 V, RIN = 20 W, VBAT = 3 V, RBAT = 100 mW Figure 20. Example of Startup When VBAT is Held Below UV Setting 12 Figure 19.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 DETAILED PRINCIPLE OF OPERATION OVERVIEW The bq25504 is an ultra low quiescent current, efficient synchronous boost converter/charger. The boost converter is based on a switching regulator architecture which maximizes efficiency while minimizing start-up and operation power. The bq25504 uses pulse frequency modulation (PFM) to maintain efficiency, even under light load conditions.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com Maximum Power Point Tracking Maximum power point tracking (MPPT) is implemented in bq25504 in order to maximize the power extracted from an energy harvester source. MPPT is performed by periodically sampling a ratio of the open-circuit voltage of the energy harvester and using that as the reference voltage (VREF_SAMP) to the boost converter. The sampling ratio can be externally programmed using the resistors ROC1 and ROC2.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 device absolute max = 5.5 V Charger off over voltage (user programmable) = 3.1 V Increasing VSTOR voltage over voltage – hyst (internal) VBAT_OK + hyst (user programmable) = 2.8 V VBAT_OK (user programmable) = 2.4 V Main Boost Charger on under voltage + hyst (internal) under voltage (user programmable) = 2.2 V charger enable = 1.8 V chip enable = 1.4 V Cold start ground Figure 22.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com The sum of the resistors should be approximately 10 MΩ that is, ROV1 + ROV2 = 10 MΩ. The overvoltage threshold when battery voltage is decreasing is given by OV_HYST. It is internal set to the over voltage threshold minus an internal hysteresis voltage denoted by VBAT_OV_HYST. Once the voltage at the battery exceeds VBAT_OV threshold, the boost converter is disabled.
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bq25504 www.ti.com SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 APPLICATION INFORMATION INDUCTOR SELECTION For the bq25504 to operate properly, an inductor of appropriate value must be connected between Pin 16 (LBST) and Pin 2 (VIN_DC) for the boost converter. For the boost converter and or charger, the inductor must have an inductance = 22 µH and have a peak current capability of ≥250 mA with the minimum series resistance to keep high efficiency.
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bq25504 SLUSAH0A – OCTOBER 2011 – REVISED SEPTEMBER 2012 www.ti.com LAYOUT CONSIDERATIONS As for all switching power supplies, the layout is an important step in the design, especially at high peak currents and high switching frequencies. If the layout is not carefully done, the boost converter/charger could show stability problems as well as EMI problems. Therefore, use wide and short traces for the main current path and for the power ground paths.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 28-Aug-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant BQ25504RGTR QFN RGT 16 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 BQ25504RGTT QFN RGT 16 250 180.0 12.4 3.3 3.3 1.1 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 28-Aug-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) BQ25504RGTR QFN RGT 16 3000 367.0 367.0 35.0 BQ25504RGTT QFN RGT 16 250 210.0 185.0 35.
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