Datasheet
bq78PL116
SLUSAB8B –OCTOBER 2010– REVISED FEBRUARY 2011
www.ti.com
PowerPump Characteristics
(1)
over free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High drive, P2S I
OUT
= –10 µA 0.9 V1 V
V
OL
Low drive, P2S I
OUT
= 200 µA 0.1 V1 V
V
OH
High drive, P1N, P2N I
OUT
= –200 µA 0.9 V1 V
V
OL
Low drive, P1N, P2N I
OUT
= 10 µA 0.1 V1 V
V
OH
High drive, P3S, P4S I
OUT
= –10 µA 0.9 V1 V
V
OL
Low drive, P3S, P4S I
OUT
= 200 µA 0.1 V1 V
V
OH
High drive, P3N, P4N I
OUT
= –200 µA 0.9 V1 V
V
OL
Low drive, P1N, P2N I
OUT
= 10 µA 0.1 V1 V
I
OH
Source current, P2S, P3S,
V
OH
= V1 – 0.8 V 250 µA
P4S
I
OL
Sink current, P1N, P2N,
VOH = V1 + 0.2 V –250 µA
P3N, P4N
t
r
Signal rise time C
Load
= 300 pF 100 ns
t
f
Signal FET fall time C
Load
= 300 pF 100 ns
f
P
Frequency 204.8 kHz
D PWM duty cycle P1N, P2N, P3N, P4N 33%
P2S, P3S, P4S 67%
(2)
(1) All parameters representative of a typical cell voltage of 3.6 V.
(2) Effective duty cycle is 33%. PxS pins are P-channel drives and MOSFET on-time is (1 – D).
10 Submit Documentation Feedback © 2010–2011, Texas Instruments Incorporated
Product Folder Link(s): bq78PL116










