Datasheet

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INA129-EP

www.ti.com

SBOS508 –DECEMBER 2009

PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS

Check for Samples: INA129-EP

FEATURES

SUPPORTS DEFENSE, AEROSPACE

AND MEDICAL APPLICATIONS

• Low Offset Voltage

• Controlled Baseline

• Low Input Bias Current

• One Assembly/Test Site

• High CMR

• One Fabrication Site

• Inputs Protected to ±40 V

• Available in Military (–55°C/125°C)

• Wide Supply Range: ±2.25 V to ±18 V

Temperature Range

(1)

• Low Quiescent Current

• Extended Product Life Cycle

• Extended Product-Change Notification

APPLICATIONS

• Product Traceability

• Bridge Amplifier

• Thermocouple Amplifier

• RTD Sensor Amplifier

• Medical Instrumentation

• Data Acquisition

(1) Custom temperature ranges available

DESCRIPTION

The INA129 is a low power, general purpose instrumentation amplifier offering excellent accuracy. The versatile

3-op amp design and small size make it ideal for a wide range of applications. Current-feedback input circuitry

provides wide bandwidth even at high gain (200 kHz at G = 100).

A single external resistor sets any gain from 1 to 10,000. The INA129 provides an industry-standard gain

equation; the INA129 gain equation is compatible with the AD620.

The INA129 is laser trimmed for very low offset voltage, drift and high common-mode rejection (113 dB at

G ≥ 100). It operates with power supplies as low as ±2.25 V, and quiescent current is only 750 μA - ideal for

battery operated systems. Internal input protection can withstand up to ±40 V without damage.

The INA129 is available in an SO-8 surface-mount package specified for the –55°C to 125°C temperature range.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (22 pages)

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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 PRECISION, LOW POWER INSTRUMENTATION AMPLIFIERS Check for Samples: INA129-EP FEATURES 1 • • • • • • Low Offset Voltage Low Input Bias Current High CMR Inputs Protected to ±40 V Wide Supply Range: ±2.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 ELECTRICAL CHARACTERISTICS At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) Boldface limits apply over the specified temperature range, TA = –55°C to 125°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT Offset Voltage, RTI Initial vs power supply TA = 25°C ±100 ±800/G Over temperature ±150 ±2050/G TA = 25°C, VS = ±2.25 V to ±18 V ±1.6 ±175/G Over temperature ±1.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com ELECTRICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, RL = 10 kΩ (unless otherwise noted) Boldface limits apply over the specified temperature range, TA = –55°C to 125°C. PARAMETER TEST CONDITIONS Gain vs temperature (2) 49.4-kΩ resistance (2) MIN TYP G=1 ppm/°C ±25 ±100 ppm/°C ±0.0001 ±0.0018 Over temperature ±0.0035 G = 10 Nonlinearity UNIT ±10 (3) VO = ±13.6 V, G=1 MAX ±1 ±0.0003 Over temperature ±0.0035 ±0.0055 G = 100 ±0.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 TYPICAL CHARACTERISTICS At TA = 25°C, VS = ±15 V, unless otherwise noted. GAIN vs FREQUENCY COMMON-MODE REJECTION vs FREQUENCY 140 60 G =1000V/V G =100V/V G = 1000V/V Common-Mode Rejection (dB) 50 40 Gain (dB) G = 100V/V 30 20 G = 10V/V 10 0 G = 1V/V − 10 − 20 120 G =10V/V 100 G =1V/V 80 60 40 20 0 1k 10k 100k 10M 1M 10 Frequency (Hz) 100 1k 10k 100k 1M Frequency (Hz) Figure 1. Figure 2.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. INPUT COMMON-MODE RANGE vs OUTPUT VOLTAGE (VS = ±15 V) INPUT COMMON-MODE RANGE vs OUTPUT VOLTAGE (VS = ±5 V, ±2.5 V) 5 15 G ≥ 10 G=1 G=1 5 +15V VD/2 0 VD/2 5 + VO Ref + VCM -15V 10 3 G=1 2 1 0 G=1 1 2 3 VS = ±5V VS = ±2.5V 5 15 -15 -10 0 -5 10 5 -5 15 -4 -3 -1 -2 0 1 2 Output Voltage (V) Output Voltage (V) Figure 5. Figure 6.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. QUIESCENT CURRENT AND SLEW RATE vs TEMPERATURE INPUT OVER-VOLTAGE V/I CHARACTERISTICS 0.85 6 0.8 5 5 Slew Rate 0.7 3 IQ 0.65 Input Current (mA) 4 0.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. OUTPUT VOLTAGE SWING vs POWER SUPPLY VOLTAGE (V+) (V+) (V+)-0.4 (V+)-0.4 Output Voltage Swing (V) Output Voltage (V) OUTPUT VOLTAGE SWING vs OUTPUT CURRENT (V+)-0.8 (V+)-1.2 (V-)+1.2 (V-)+0.8 +25°C (V+)-0.8 (V+)-1.2 -40 °C RL = 10 k Ω +25°C (V-)+1.2 -40 °C +85°C (V-)+0.8 (V-) (V-) 0 1 2 3 0 4 5 10 15 Figure 13. Figure 14.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 TYPICAL CHARACTERISTICS (continued) At TA = 25°C, VS = ±15 V, unless otherwise noted. TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY SMALL SIGNAL (G = 1, 10) 1 TH D + N (% ) VO = 1 V r m s 500kHz Measurement Bandwidth 0.1 G=1 RL = 10kW G=1 G =100, RL = 100kW 20mV/div 0.01 G =10V/V RL = 100kW G =1, RL = 100kW Dashed Portion is noise limited. 0.001 100 10k 1k G = 10 100k 5ms/div Frequency (Hz) Figure 17. Figure 18.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com APPLICATION INFORMATION Figure 23 shows the basic connections required for operation of the INA129. Applications with noisy or high impedance power supplies may require decoupling capacitors close to the device pins as shown. The output is referred to the output reference (Ref) terminal which is normally grounded. This must be a low-impedance connection to assure good common-mode rejection.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 Noise Performance The INA129 provides very low noise in most applications. Low frequency noise is approximately 0.2 μVPP measured from 0.1 Hz to 10 Hz (G ≥ 100). This provides dramatically improved noise when compared to state-of-the-art chopper-stabilized amplifiers. Offset Trimming The INA129 is laser trimmed for low offset voltage and offset voltage drift. Most applications require no external offset adjustment.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com Microphone, Hydrophone etc. INA129 47kW 47kW Thermocouple INA129 10kW INA129 Center-tap provides bias current return. Figure 25. Providing an Input Common-Mode Current Path Input Common-Mode Range The linear input voltage range of the input circuitry of the INA129 is from approximately 1.4 V below the positive supply voltage to 1.7 V above the negative supply.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 +5V 2.5V - ∆V RG 300W VO INA129 Ref 2.5V + ∆V Figure 26. Bridge Amplifier VIN + VO RG INA129 Ref C1 0.1mF OPA130 R1 1MW 1 f-3dB = 2pR1C1 = 1.59 Hz Figure 27.
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INA129-EP SBOS508 – DECEMBER 2009 www.ti.com V+ 10.0V 6 REF102 R1 2 R2 4 Pt100 Cu K VO Cu RG INA129 Ref R3 100Ω = Pt100 at 0°C ISA TYPE MATERIAL +Chromel -Constantan +Iron -Constantan +Chromel -Alumel +Copper -Constantan E J K T SEEBECK COEFFICIENT (mV/°C) R1, R2 58.5 66.5kW 50.2 76.8kW 39.4 97.6kW 38 102kW Figure 28. Thermocouple Amplifier With RTD Cold-Junction Compensation VIN IO = R1 RG INA129 V IN ·G R1 + Ref IB A1 A1 IB ERROR OPA177 ± 1.
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INA129-EP www.ti.com SBOS508 – DECEMBER 2009 RG = 5.6kW 2.8kW G = 10 LA RA RG/2 INA129 VO Ref 2.8kW 390kW 1/2 OPA2131 RL 390kW VG 10kW VG 1/2 OPA2131 NOTE: Due to the INA129’s current-feedback topology, VG is approximately 0.7 V less than the common-mode input voltage. This DC offset in this guard potential is satisfactory for many guarding applications. Figure 30.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device INA129MDREP Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.4 B0 (mm) K0 (mm) P1 (mm) 5.2 2.1 8.0 W Pin1 (mm) Quadrant 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA129MDREP SOIC D 8 2500 367.0 367.0 35.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.