Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp, differential amplifier Differential SOIC 8

100

110

120

10 100 1k 10k 100k

Frequency (Hz)

Common−Mode Rejection Ratio (dB)

INA149

Competitor A

INA149

www.ti.com

SBOS579B –SEPTEMBER 2011–REVISED JULY 2012

High Common-Mode Voltage Difference Amplifier

FEATURES

DESCRIPTION

The INA149 is a precision unity-gain difference

• Common-Mode Voltage Range: ±275 V

amplifier with a very high input common-mode

• Minimum CMRR: 90 dB from –40°C to +125°C

voltage range. It is a single, monolithic device that

• DC Specifications:

consists of a precision op amp and an integrated thin-

film resistor network. The INA149 can accurately

– Maximum Offset Voltage: 1100 μV

measure small differential voltages in the presence of

– Maximum Offset Voltage Drift: 15 μV/°C

common-mode signals up to ±275 V. The INA149

– Maximum Gain Error: 0.02%

inputs are protected from momentary common-mode

or differential overloads of up to 500 V.

– Maximum Gain Error Drift: 10 ppm/°C

– Maximum Gain Nonlinearity: 0.001% FSR

In many applications, where galvanic isolation in not

required, the INA149 can replace isolation amplifiers.

• AC Performance:

This ability can eliminate costly isolated input side

– Bandwidth: 500 kHz

power supplies and the associated ripple, noise, and

– Typical Slew Rate: 5 V/μs

quiescent current. The excellent 0.0005% nonlinearity

and 500-kHz bandwidth of the INA149 are superior to

• Wide Supply Range: ±2.0 V to ±18 V

those of conventional isolation amplifiers.

– Maximum Quiescent Current: 900 μA

The INA149 is pin-compatible with the INA117 and

– Output Swing on ±15-V Supplies: ±13.5 V

INA148 type high common-mode voltage amplifiers

• Input Protection:

and offers improved performance over both devices.

– Common-Mode: ±500 V

The INA149 is available in the SOIC-8 package with

operation specified over the extended industrial

– Differential: ±500 V

temperature range of –40°C to +125°C.

APPLICATIONS

• High-Voltage Current Sensing

• Battery Cell Voltage Monitoring

• Power-Supply Current Monitoring

• Motor Controls

• Replacement for Isolation Circuits

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (26 pages)

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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 High Common-Mode Voltage Difference Amplifier FEATURES DESCRIPTION • • • The INA149 is a precision unity-gain difference amplifier with a very high input common-mode voltage range. It is a single, monolithic device that consists of a precision op amp and an integrated thinfilm resistor network. The INA149 can accurately measure small differential voltages in the presence of common-mode signals up to ±275 V.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 ELECTRICAL CHARACTERISTICS: V+ = +15 V and V– = –15 V At TA = +25°C, RL = 2 kΩ connected to ground, and VCM = REFA = REFB = GND, unless otherwise noted. INA149 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ±0.02 %FSR GAIN Initial VOUT = ±10.0 V 1 Gain error VOUT = ±10.0 V ±0.005 Gain vs temperature, TA = –40°C to +125°C Nonlinearity V/V ±1.5 ±10 ppm/°C ±0.0005 ±0.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com ELECTRICAL CHARACTERISTICS: V+ = 5 V and V– = 0 V At TA = +25°C, RL = 2 kΩ connected to 2.5 V, and VCM= REFA = REFB = 2.5 V, unless otherwise noted. INA149 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GAIN Initial VOUT = 1.5 V to 3.5 V 1 Gain error VOUT = 1.5 V to 3.5 V ±0.005 %FSR Gain vs temperature, TA = –40°C to +125°C ±1.5 ppm/°C ±0.
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INA149 www.ti.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com TYPICAL CHARACTERISTICS At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted. CMRR vs FREQUENCY COMMON-MODE REJECTION −40°C +25°C +125°C 80 60 40 20 2 0 −2 −4 10 100 1k 10k 100k Frequency (Hz) 1M 10M −6 −400 G001 −300 −200 −100 0 100 200 Common−Mode Input Voltage (V) 300 400 G066 Figure 1. Figure 2.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted. TYPICAL GAIN ERROR FOR LOW SUPPLY VOLTAGES (Curves Offset for Clarity) GAIN NONLINEARITY 10 VS = ±5 V VS = ±5 V VS = ±5 V VS = ±2.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted. GAIN vs FREQUENCY NOISE SPECTRAL DENSITY vs FREQUENCY 1000 Noise Spectral Density (nV/ Hz) 20 Gain (dB) 0 −20 −40 25 °C −40 °C 125 °C −60 −80 100 1k 10k 100k Frequency (Hz) 1M 900 800 700 600 500 400 10M 1 10 100 1k Frequency (Hz) G010 Figure 13.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted. LARGE-SIGNAL STEP RESPONSE SMALL-SIGNAL STEP RESPONSE CL = 1000 pF RL = 2 kΩ Output Voltage (5 V/div) Output Voltage (25 mV/div) CL = 1000 pF RL = 2 kΩ Time (4 µs/div) Time (4 µs/div) G011 G012 Figure 19. Figure 20. −80 −100 0 nF 1 nF 3 nF 5 nF 10 nF 1.2 4 Error Voltage Output Voltage 2 1 0 0.8 −2 0.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 TYPICAL CHARACTERISTICS (continued) At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted. GAIN ERROR vs TEMPERATURE 50 1.6 40 1.2 30 0.8 20 Gain Error (m%) PSRR (µV/V) PSRR vs TEMPERATURE 2 0.4 0 −0.4 −0.8 10 0 −10 −20 −1.2 −30 −1.6 −40 −2 −75 −50 −25 0 −50 −75 −50 −25 25 50 75 100 125 150 175 Temperature (°C) G029 0 Figure 31. 25 50 75 100 125 150 175 Temperature (°C) G030 Figure 32.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) At TA = +25°C, RL = 2 kΩ connected to ground, and VS = ±15 V, unless otherwise noted. FREQUENCY RESPONSE vs CAPACITIVE LOAD QUIESCENT CURRENT vs SUPPLY VOLTAGE 1200 10 0 1000 Quiescent Current (µA) VOUT / VIN (dB) −10 −20 −30 −40 −50 0 nF 1 nF 3 nF 5 nF 10 nF −60 −70 −80 −90 100 800 600 400 −45°C +25°C +85°C +130°C 200 1k 10k 100k Frequency (Hz) 1M 0 10M 0 G044 Figure 37.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 APPLICATION INFORMATION BASIC INFORMATION Figure 43 shows the basic connections required for dual-supply operation. Applications with noisy or highimpedance power-supply lines may require decoupling capacitors placed close to the device pins. The output voltage is equal to the differential input voltage between pins 2 and 3. The common-mode input voltage is rejected. Figure 44 shows the basic connections required for single-supply operation.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com COMMON-MODE REJECTION Common-mode rejection (CMR) of the INA149 depends on the input resistor network, which is laser-trimmed for accurate ratio matching. To maintain high CMR, it is important to have low source impedance driving the two inputs. A 75-Ω resistance in series with pins 2 or 3 decreases the common-mode rejection ratio (CMRR) from 100 dB (typical) to 74 dB. Resistance in series with the reference pins also degrades CMR.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 MEASURING CURRENT The INA149 can be used to measure a current by sensing the voltage drop across a series resistor, RS. Figure 46 shows the INA149 used to measure the supply currents of a device under test. The sense resistor imbalances the input resistor matching of the INA149, thus degrading its CMR. Also, the input impedance of the INA149 loads RS, causing gain error in the voltage-to-current conversion.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com NOISE PERFORMANCE The wideband noise performane of the INA149 is dominated by the internal resistor network. The thermal or Johnson noise of these resistors measures approximately 550 nV/√Hz. The internal op amp contributes virtually no excess noise at frequencies above 100 Hz. Many applications may be satisfied with less than the full 500-kHz bandwidth of the INA149.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 ERROR BUDGET ANALYSIS The following error budget analysis demonstrates the importance of a high common-mode rejection ratio when measuring small differential signals in the presence of high common-mode voltages. Figure 48 shows a typical current measurement application.
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INA149 SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 www.ti.com BATTERY CELL VOLTAGE MONITOR The INA149 can be used to measure the voltages of single cells in a stacked battery pack. Figure 49 shows an examples for such an application. (+275 V max) +VS 2 3 INA149 + 2 3 INA149 + Repeat for each cell MSP430 16-Bit Ultra-LowPower Microcontroller ADS8638 12-bit, 8-Channel, Bipolar SAR ADC 2 3 INA149 + 2 3 INA149 + −VS (−275 V max) Figure 49.
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INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (November 2011) to Revision B • Page Changed package marking data in Package/Ordering Information table .............................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device INA149AIDR Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.4 B0 (mm) K0 (mm) P1 (mm) 5.2 2.1 8.0 W Pin1 (mm) Quadrant 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA149AIDR SOIC D 8 2500 367.0 367.0 35.
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