Datasheet

INA212-Q1, INA213A-Q1
INA214-Q1
SBOS475D –MARCH 2009–REVISED OCTOBER 2013 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
VALUE UNIT
MIN MAX
V
S
Supply voltage 26 V
Differential (V
IN+
)–(V
IN–
) –26 26 V
V
IN+
Analog inputs voltage
(2)
V
IN–
Common-Mode
(3)
GND – 0.3 26 V
V
REF
REF input voltage GND – 0.3 V+ + 0.3 V
V
OUT
Output voltage
(3)
GND – 0.3 V+ + 0.3 V
I
IN
Input current into any pin
(3)
5 mA
θ
JA
Thermal impedance, junction to free air 250 °C/W
T
stg
Storage temperature –65 150 °C
T
J
Junction temperature 150 °C
Human Body Model (HBM) Classification Level H2 2000 V
ESD Electrostatic discharge rating
Charged-Device Model (CDM) Classification Level C4B 1000 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) V
IN+
and V
IN–
are the voltages at the IN+ and IN– pins, respectively.
(3) Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
S
Supply voltage 2.7 26 V
T
J
Junction temperature –40 125 °C
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