Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - In-amp, Op-amp InAmp PDIP 8

Low-Noise, Low-Distortion

INSTRUMENTATION AMPLIFIER

Replacement for SSM2017

DESCRIPTION

The INA217 is a low-noise, low-distortion, monolithic instru-

mentation amplifier. Current-feedback circuitry allows the

INA217 to achieve wide bandwidth and excellent dynamic

response over a wide range of gain. The INA217 is ideal for

low-level audio signals such as balanced low-impedance

microphones. Many industrial, instrumentation, and medical

applications also benefit from its low noise and wide band-

width.

Unique distortion cancellation circuitry reduces distortion to

extremely low levels, even in high gain. The INA217 provides

near-theoretical noise performance for 200Ω source imped-

ance. The INA217 features differential input, low noise, and

low distortion that provides superior performance in profes-

sional microphone amplifier applications.

The INA217 features wide supply voltage, excellent output

voltage swing, and high output current drive, making it an

optimal candidate for use in high-level audio stages.

The INA217 is available in the same DIP-8 and SOL-16 wide

body packages and pinouts as the SSM2017. For a smaller

package, see the INA163 in SO-14 narrow. The INA217 is

specified over the temperature range of –40°C to +85°C.

APPLICATIONS

● PROFESSIONAL MICROPHONE PREAMPS

● MOVING-COIL TRANSDUCER AMPLIFIERS

● DIFFERENTIAL RECEIVERS

● BRIDGE TRANSDUCER AMPLIFIERS

FEATURES

● LOW NOISE: 1.3nV/√Hz at 1kHz

● LOW THD+N: 0.004% at 1kHz, G = 100

● WIDE BANDWIDTH: 800kHz at G = 100

● WIDE SUPPLY RANGE:

±4.5V to ±18V

● HIGH CMR: > 100dB

● GAIN SET WITH EXTERNAL RESISTOR

● DIP-8 AND SOL-16 WIDEBODY PACKAGES

INA217

SBOS247B – JUNE 2002 – REVISED FEBRUARY 2005

www.ti.com

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

6kΩ 6kΩ

–

V–

V+

REF

INA217

G = 1 +

10kΩ

5kΩ

OUT

All trademarks are the property of their respective owners.

Summary of content (15 pages)

PAGE 1
INA217 INA 217 INA 217 SBOS247B – JUNE 2002 – REVISED FEBRUARY 2005 Low-Noise, Low-Distortion INSTRUMENTATION AMPLIFIER Replacement for SSM2017 FEATURES DESCRIPTION ● ● ● ● ● ● ● The INA217 is a low-noise, low-distortion, monolithic instrumentation amplifier. Current-feedback circuitry allows the INA217 to achieve wide bandwidth and excellent dynamic response over a wide range of gain. The INA217 is ideal for low-level audio signals such as balanced low-impedance microphones.
PAGE 2
ABSOLUTE MAXIMUM RATINGS(1) Supply Voltage, V+ to V– .................................................................. ±18V Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V Current(2) .................................................... 10mA Output Short-Circuit(3) .............................................................. Continuous Operating Temperature .................................................. –55°C to +125°C Storage Temperature ..............................
PAGE 3
ELECTRICAL CHARACTERISTICS: VS = ±15V Boldface limits apply over the specified temperature range, TA = –40°C to +85°C. TA = +25°C, RL = 2kΩ, VS = ±15V, unless otherwise noted. INA217 PARAMETER CONDITIONS MIN GAIN EQUATION Range Gain Error, G = 1 G = 10 G = 100 G = 1000 Gain Temp Drift Coefficient, G = 1 G > 10 Nonlinearity, G = 1 G = 100 TYP G = 1 + 10k/RG 1 to 10000 ±0.1 ±0.2 ±0.2 ±0.5 ±3 ±40 ±0.0003 ±0.
PAGE 4
TYPICAL CHARACTERISTICS At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted. THD+N vs FREQUENCY GAIN vs FREQUENCY 0.1 70 G = 1000 60 G = 1000 50 G = 100 30 20 0.01 THD+N (%) Gain (dB) 40 G = 10 G = 100 0.001 10 0 G = 10 G=1 0.0001 –20 10k 100k 1M 20 10M 100 NOISE VOLTAGE (RTI) vs FREQUENCY CURRENT NOISE SPECTRAL DENSITY Current Noise Density (pA/ Hz) G=1 100 G = 10 10 G = 1000 G = 500 G = 100 1 0.
PAGE 5
TYPICAL CHARACTERISTICS (Cont.) At TA = +25°C, VS = ±15V, RL = 2kΩ, unless otherwise noted. OUTPUT VOLTAGE SWING vs OUTPUT CURRENT SETTLING TIME vs GAIN V+ 10 20V Step 8 (V+) – 4 Settling Time (µs) Output Voltage to Rail (V) (V+) – 2 (V+) – 6 (V–) + 6 (V–) + 4 0.01% 6 4 2 (V–) + 2 0.
PAGE 6
APPLICATIONS INFORMATION relatively high input bias current and input bias current noise. As a result, the INA217 may not provide the best noise performance with a source impedance greater than 10kΩ. For source impedance greater than 10kΩ, other instrumentation amplifiers may provide improved noise performance. Figure 1 shows the basic connections required for operation. Power supplies should be bypassed with 0.1µF tantalum capacitors near the device pins.
PAGE 7
OFFSET VOLTAGE TRIM MICROPHONE AMPLIFIER A variable voltage applied to pin 5, as shown in Figure 3, can be used to adjust the output offset voltage. A voltage applied to pin 5 is summed with the output signal. An op amp connected as a buffer is used to provide a low impedance at pin 5 to assure good common-mode rejection. Figure 4 shows a typical circuit for a professional microphone input amplifier.
PAGE 8
PACKAGE OPTION ADDENDUM www.ti.
PAGE 9
PACKAGE OPTION ADDENDUM www.ti.com 6-Jan-2012 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PAGE 10
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA217AIDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1 INA217AIDWT SOIC DW 16 250 180.0 16.4 10.75 10.7 2.7 12.0 16.
PAGE 11
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA217AIDWR SOIC DW 16 2000 367.0 367.0 38.0 INA217AIDWT SOIC DW 16 250 184.0 184.0 50.
PAGE 12
PAGE 13
PAGE 14
PAGE 15
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.