Datasheet

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LEN

GND

LM27222

(to controller)

VCC

4V to 6.85V

0.33 PF

OUT

up to 30V

0.5V to

Vin - 0.5V

LM27222

www.ti.com

SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013

LM27222 High-Speed 4.5A Synchronous MOSFET Driver

Check for Samples: LM27222

FEATURES

DESCRIPTION

The LM27222 is a dual N-channel MOSFET driver

• Adaptive Shoot-through Protection

designed to drive MOSFETs in push-pull

• 10ns Dead Time

configurations as typically used in synchronous buck

• 8ns Propagation Delay

regulators. The LM27222 takes the PWM output from

a controller and provides the proper timing and drive

• 30ns Minimum On-time

levels to the power stage MOSFETs. Adaptive shoot-

• 0.4Ω Pull-down and 0.9Ω Pull-up Drivers

through protection prevents damaging and efficiency

• 4.5A Peak Driving Current

reducing shoot-through currents, thus ensuring a

robust design capable of being used with nearly any

• MOSFET Tolerant Design

MOSFET. The adaptive shoot-through protection

• 5µA Quiescent Current

circuitry also reduces the dead time down to as low

• 30V Maximum Input Voltage in Buck

as 10ns, ensuring the highest operating efficiency.

Configuration

The peak sourcing and sinking current for each driver

of the LM27222 is about 3A and 4.5Amps

• 4V to 6.85V Operating Voltage

respectively with a Vgs of 5V. System performance is

• SOIC-8 and WSON Packages

also enhanced by keeping propagation delays down

to 8ns. Efficiency is once again improved at all load

APPLICATIONS

currents by supporting synchronous, non-

synchronous, and diode emulation modes through the

• High Current Buck And Boost Voltage

LEN pin. The minimum output pulse width realized at

Converters

the output of the MOSFETs is as low as 30ns. This

• Fast Transient DC/DC Power Supplies

enables high operating frequencies at very high

• Single Ended Forward Output Rectification

conversion ratios in buck regulator designs. To

support low power states in notebook systems, the

• CPU And GPU Core Voltage Regulators

LM27222 draws only 5µA from the 5V rail when the

IN and LEN inputs are low or floating.

Typical Application

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (16 pages)

PAGE 1
LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Check for Samples: LM27222 FEATURES DESCRIPTION • • • • • • • • • The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically used in synchronous buck regulators. The LM27222 takes the PWM output from a controller and provides the proper timing and drive levels to the power stage MOSFETs.
PAGE 2
LM27222 SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 www.ti.com Connection Diagram SW 1 8 GND HG 2 7 LG CB 3 6 VCC IN 4 5 LEN Figure 1. Top View SOIC-8 (Package # D0008A) θJA = 172°C/W or WSON-8 (Package # NGT0008A) θJA = 39°C/W PIN DESCRIPTIONS Pin # Pin Name Pin Function 1 SW High-side driver return. Should be connected to the common node of high and low-side MOSFETs. 2 HG High-side gate drive output. Should be connected to the high-side MOSFET gate.
PAGE 3
LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 Absolute Maximum Ratings (1) VCC to GND -0.3V to 7V CB to GND -0.3V to 36V CB to SW SW to GND -0.3V to 7V (2) -2V to 36V -0.3V to VCC + 0.3V ≤ 7V LEN, IN, LG to GND HG to GND -0.3V to 36V Junction Temperature +150°C (3) 720mW Storage Temperature −65° to 150°C ESD Susceptibility Human Body Model 2kV Power Dissipation (1) (2) (3) Absolute Maximum Ratings are limits beyond which damage to the device may occur.
PAGE 4
LM27222 SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 Electrical Characteristics www.ti.com (1) VCC = CB = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for TA = TJ = +25°C. Limits appearing in boldface type apply over the entire operating temperature range (-40°C ≤ TJ ≤ 125°C).
PAGE 5
LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 Timing Diagram IN t2 t5 t1 t7 t8 0.9V LG t3 t6 t4 HG-SW 0.9V Typical Waveforms IN IN HG-SW HG-SW LG LG 40 ns/DIV 40 ns/DIV Figure 2. PWM Low-to-High Transition at IN Input Figure 3. PWM High-to-Low Transition at IN Input IN LEN HG LG 400 ns/DIV Figure 4. LEN Operation The typical waveforms are from a circuit similar to Typical Application with: Q1: 2 x Si7390DP Q2: 2 x Si7356DP L1: 0.
PAGE 6
LM27222 SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 www.ti.com APPLICATION INFORMATION GENERAL The LM27222 is designed for high speed and high operating reliability. The driver can handle very narrow, down to zero, PWM pulses in a specified, deterministic way. Therefore, the HG and LG outputs are always in predictable states. No latches are used in the HG and LG control logic so the drivers cannot get "stuck" in the wrong state.
PAGE 7
LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 In the case of insufficient initial CB-SW voltage (less than 2V) such as when the output rail is pre-biased, the shoot-through protection circuit holds LG low for about 170ns, beginning from the instant when IN goes high. After the 170ns delay, the status of LG is dictated by LEN and IN. Once LG goes high and SW goes low, the bootstrap capacitor will be charged up (assuming SW is grounded for long enough time).
PAGE 8
LM27222 SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 www.ti.com TYPICAL APPLICATION CIRCUIT DESCRIPITON The Application Example on the following page shows the LM27222 being used with the LM27212, a 2-phase hysteretic current mode controller. Although this circuit is capable of operating from 5V to 28V, the components are optimized for an input voltage range of 9V to 28V. The high-side FET is selected for low gate charge to reduce switching losses.
PAGE 9
LM27222 www.ti.com SNVS306B – SEPTEMBER 2004 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision A (March 2013) to Revision B • Page Changed layout of National Data Sheet to TI format ............................................................................................................
PAGE 10
PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 14-Feb-2014 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties.
PAGE 12
PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM27222MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM27222SD WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM27222SD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.
PAGE 13
PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM27222MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM27222SD WSON NGT 8 1000 210.0 185.0 35.0 LM27222SD/NOPB WSON NGT 8 1000 210.0 185.0 35.
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MECHANICAL DATA NGT0008A SDC08A (Rev A) www.ti.
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