Datasheet

LM195, LM395
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SNOSBO4C JUNE 1999REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
Collector to Emitter Voltage
LM195 42V
LM395 36V
Collector to Base Voltage
LM195 42V
LM395 36V
Base to Emitter Voltage (Forward)
LM195 42V
LM395 36V
Base to Emitter Voltage (Reverse) 20V
Collector Current Internally Limited
Power Dissipation Internally Limited
Operating Temperature Range
LM195 55°C to +150°C
LM395 0°C to +125°C
Storage Temperature Range 65°C to +150°C
Lead Temperature
(Soldering, 10 sec.) 260°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
PRECONDITIONING
100% Burn-In In Thermal Limit
ELECTRICAL CHARACTERISTICS
LM195 LM395
Parameter Conditions Units
Min Typ Max Min Typ Max
Collector-Emitter Operating Voltage I
Q
I
C
I
MAX
42 36 V
(2)
Base to Emitter Breakdown Voltage 0 V
CE
V
CEMAX
42 36 60 V
Collector Current
TO-3, TO-220 V
CE
15V 1.2 2.2 1.0 2.2 A
TO-5 V
CE
7.0V 1.2 1.8 1.0 1.8 A
Saturation Voltage I
C
1.0A, T
A
= 25°C 1.8 2.0 1.8 2.2 V
Base Current 0 I
C
I
MAX
3.0 5.0 3.0 10 μA
0 V
CE
V
CEMAX
Quiescent Current (I
Q
) V
be
= 0
2.0 5.0 2.0 10 mA
0 V
CE
V
CEMAX
Base to Emitter Voltage I
C
= 1.0A, T
A
= +25°C 0.9 0.9 V
Switching Time V
CE
= 36V, R
L
= 36Ω,
500 500 ns
T
A
= 25°C
(1) Unless otherwise specified, these specifications apply for 55°C T
j
+150°C for the LM195 and 0°C +125°C for the LM395.
(2) Selected devices with higher breakdown available.
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Product Folder Links: LM195 LM395