Datasheet

Table 23-2. Recommended DC Operating Conditions (continued)
UnitMaxNomMinParameter NameParameter
V5.0-2.0High-level input voltageV
IH
V1.3--0.3Low-level input voltageV
IL
V--2.4High-level output voltageV
OH
a
V0.4--Low-level output voltageV
OL
a
High-level source current, V
OH
=2.4 V
I
OH
mA--2.02-mA Drive
mA--4.04-mA Drive
mA--8.08-mA Drive
Low-level sink current, V
OL
=0.4 V
I
OL
mA--2.02-mA Drive
mA--4.04-mA Drive
mA--8.08-mA Drive
a. V
OL
and V
OH
shift to 1.2 V when using high-current GPIOs.
23.1.3 On-Chip Low Drop-Out (LDO) Regulator Characteristics
Table 23-3. LDO Regulator Characteristics
UnitMaxNomMinParameter NameParameter
V2.752.52.25Programmable internal (logic) power supply
output value
V
LDOOUT
%-2%-Output voltage accuracy
µs100--Power-on timet
PON
µs200--Time ont
ON
µs100--Time offt
OFF
mV-50-Step programming incremental voltageV
STEP
µF3.0-1.0External filter capacitor size for internal power
supply
C
LDO
23.1.4 GPIO Module Characteristics
Table 23-4. GPIO Module DC Characteristics
UnitMaxNomMinParameter NameParameter
kΩ110-50GPIO internal pull-up resistorR
GPIOPU
kΩ180-55GPIO internal pull-down resistorR
GPIOPD
µA2--GPIO input leakage current
a
I
LKG
a. The leakage current is measured with GND or V
DD
applied to the corresponding pin(s). The leakage of digital port pins is
measured individually. The port pin is configured as an input and the pullup/pulldown resistor is disabled.
23.1.5 Power Specifications
The power measurements specified in the tables that follow are run on the core processor using
SRAM with the following specifications (except as noted):
■ V
DD
= 3.3 V
749June 18, 2012
Texas Instruments-Production Data
Stellaris
®
LM3S8962 Microcontroller
NRND: Not recommended for new designs.