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LM5107

www.ti.com

SNVS333D –NOVEMBER 2004–REVISED MARCH 2013

LM5107 100V / 1.4A Peak Half Bridge Gate Driver

Check for Samples: LM5107

FEATURES

DESCRIPTION

The LM5107 is a low cost high voltage gate driver,

• Drives Both a High Side and Low Side N-

designed to drive both the high side and the low side

Channel MOSFET

N-Channel MOSFETs in a synchronous buck or a

• High Peak Output Current (1.4A Sink / 1.3A

half bridge configuration. The floating high-side driver

Source)

is capable of working with rail voltages up to 100V.

The outputs are independently controlled with TTL

• Independent TTL compatible inputs

compatible input thresholds. An integrated on chip

• Integrated Bootstrap Diode

high voltage diode is provided to charge the high side

• Bootstrap Supply Voltage to 118V DC

gate drive bootstrap capacitor. A robust level shifter

• Fast Propagation Times (27 ns Typical)

technology operates at high speed while consuming

low power and providing clean level transitions from

• Drives 1000 pF Load with 15ns Rise and Fall

the control input logic to the high side gate driver.

Times

Under-voltage lockout is provided on both the low

• Excellent Propagation Delay Matching (2 ns

side and the high side power rails. The device is

Typical)

available in the SOIC and the thermally enhanced

WSON packages.

• Supply Rail Under-Voltage Lockout

• Low Power Consumption

Package

• Pin Compatible with ISL6700

• SOIC

• WSON (4 mm x 4 mm)

TYPICAL APPLICATIONS

• Current Fed Push-Pull Converters

• Half and Full Bridge Power Converters

• Solid State Motor Drives

• Two Switch Forward Power Converters

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (18 pages)

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LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 LM5107 100V / 1.4A Peak Half Bridge Gate Driver Check for Samples: LM5107 FEATURES DESCRIPTION • The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds.
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LM5107 SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 www.ti.com Simplified Block Diagram HV HB HO UVLO LEVEL SHIFT DRIVER HS HI VDD UVLO LO DRIVER LI VSS Connection Diagrams VDD 1 8 HB VDD 1 8 HB HI 2 7 HO HI 2 7 HO LI 3 6 HS LI 3 6 HS LO VSS 4 5 LO VSS 4 5 Figure 1. 8-Lead SOIC See D Package Figure 2.
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LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) VDD to VSS -0.3V to 18V HB to HS −0.3V to 18V −0.3V to VDD +0.3V LI or HI to VSS LO to VSS −0.3V to VDD +0.3V HO to VSS VHS −0.3V to VHB +0.
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LM5107 SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 www.ti.com Electrical Characteristics Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO. Symbol Parameter Conditions Min (1) Typ Max (1) Units SUPPLY CURRENTS IDD VDD Quiescent Current LI = HI = 0V 0.3 0.6 mA IDDO VDD Operating Current f = 500 kHz 2.1 3.
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LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 Switching Characteristics Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO.
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LM5107 SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics VDD Operating Current vs Frequency 100 HB Operating Current vs Frequency 100 VDD = VHB = 12V VDD = VHB = 12V VSS = VHS = 0V VSS = VHS = 0V 10 10 IDDO (mA) CL = 2200 pF IDDO (mA) CL = 1000 pF CL = 1000 pF CL = 4400 pF CL = 2200 pF CL = 4400 pF 1 1 CL = 0 pF 0.1 CL = 0 pF CL = 470 pF CL = 470 pF 0.1 0.01 1 10 100 1000 1 10 FREQUENCY (kHz) 100 1000 FREQUENCY (kHz) Figure 3.
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LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 Typical Performance Characteristics (continued) LO and HO High Level Output Voltage vs Temperature LO and HO Low Level Output Voltage vs Temperature 0.5 0.9 Output Current : -100 mA 0.8 VSS = VHS = 0V Output Current : -100 mA VSS = VHS = 0V 0.4 0.7 VDD = VHB = 8V 0.6 VOL (V) VOH (V) VDD = VHB = 8V 0.5 0.3 VDD = VHB = 12V 0.4 VDD = VHB = 12V 0.3 0.2 VDD = VHB =16V 0.2 VDD = VHB =16V 0.
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LM5107 SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) Input Thresholds vs Temperature Input Thresholds vs Supply Voltage 1.92 VDD = 12V 1.95 INPUT THRESHOLD VOLTAGE (V) INPUT THRESHOLD VOLTAGE (V) 2.00 VSS = 0V Rising 1.90 1.85 Falling 1.80 1.75 1.91 1.89 1.88 1.87 1.86 1.85 Falling 1.84 1.83 1.82 1.81 1.70 1.80 -40 -25 -10 5 20 35 50 65 80 95 110 125 8 9 10 11 12 13 14 15 16 VDD (V) TEMPERATURE (oC) Figure 15.
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LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 Timing Diagram LI LI HI tHPLH tLPLH HI tHPHL tLPHL LO LO HO HO tMON tMOFF Figure 17. Layout Considerations The optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout. Following points are emphasized. 1.
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LM5107 SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 www.ti.com capacitor should be located at the leads of the IC to minimize series inductance. The peak currents from LO and HO can be quite large. Any series inductances with the bypass capacitor will cause voltage ringing at the leads of the IC which must be avoided for reliable operation.
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LM5107 www.ti.com SNVS333D – NOVEMBER 2004 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision C (March 2013) to Revision D • Page Changed layout of National Data Sheet to TI format ............................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 7-Oct-2013 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5107MAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5107SD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5107SDX/NOPB WSON NGT 8 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5107MAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5107SD/NOPB WSON NGT 8 1000 210.0 185.0 35.0 LM5107SDX/NOPB WSON NGT 8 4500 367.0 367.0 35.
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MECHANICAL DATA NGT0008A SDC08A (Rev A) www.ti.
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