Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - gate drivers Non-inverting Half-bridge SOIC 8

LM5109A

www.ti.com

SNVS412A –APRIL 2006–REVISED MARCH 2013

LM5109A High Voltage 1A Peak Half Bridge Gate Driver

Check for Samples: LM5109A

FEATURES

DESCRIPTION

The LM5109A is a cost effective, high voltage gate

• Drives Both a High-Side and Low-Side N-

driver designed to drive both the high-side and the

Channel MOSFET

low-side N-Channel MOSFETs in a synchronous

• 1A peak Output Current (1.0A Sink / 1.0A

buck or a half bridge configuration. The floating high-

Source)

side driver is capable of working with rail voltages up

to 90V. The outputs are independently controlled with

• Independent TTL Compatible Inputs

TTL compatible input thresholds. The robust level

• Bootstrap Supply Voltage to 108V DC

shift technology operates at high speed while

• Fast Propagation Times (30 ns Typical)

consuming low power and providing clean level

• Drives 1000 pF Load with 15ns Rise and Fall

transitions from the control input logic to the high-side

gate driver. Under-voltage lockout is provided on both

Times

the low-side and the high-side power rails. The

• Excellent Propagation Delay Matching (2 ns

device is available in the SOIC and the thermally

Typical)

enhanced WSON packages.

• Supply Rail Under-Voltage Lockout

• Low Power Consumption Package

• Pin Compatible with ISL6700

• SOIC

• WSON-8 (4 mm x 4 mm)

TYPICAL APPLICATIONS

• Current Fed Push-Pull Converters

• Half and Full Bridge Power Converters

• Solid State Motor Drives

• Two Switch Forward Power Converters

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (16 pages)

PAGE 1
LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 LM5109A High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109A FEATURES DESCRIPTION • The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating highside driver is capable of working with rail voltages up to 90V.
PAGE 2
LM5109A SNVS412A – APRIL 2006 – REVISED MARCH 2013 www.ti.com Simplified Block Diagram VDD HV HB HO DRIVER LEVEL SHIFT UVLO HS HI VDD UVLO LO DRIVER LI VSS Connection Diagrams VDD 1 8 HB VDD 1 8 HB HI 2 7 HO HI 2 7 HO LI 3 6 HS LI 3 6 HS VSS 4 5 LO VSS 4 5 LO Figure 1. 8-Lead SOIC See D Package Figure 2.
PAGE 3
LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 PIN DESCRIPTIONS (continued) Pin # SOIC WSON (1) 8 8 NAME HB DESCRIPTION High side gate driver positive supply rail APPLICATION INFORMATION Connect the positive terminal of the bootstrap capacitor to HB and the negative terminal of the bootstrap capacitor to HS. The bootstrap capacitor should be placed as close to IC as possible. These devices have limited built-in ESD protection.
PAGE 4
LM5109A SNVS412A – APRIL 2006 – REVISED MARCH 2013 www.ti.com Electrical Characteristics (continued) Specifications in standard typeface are for TJ = 25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO(1). TYP MAX UNIT IHBS SYMBOL HB to VSS current, quiescent PARAMETER VHS = VHB = 90V CONDITIONS MIN 0.1 10 µA IHBSO HB to VSS current, operating f = 500 kHz 0.
PAGE 5
LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 Typical Performance Characteristics VDD Operating Current vs Frequency 100 HB Operating Current vs Frequency 100 VDD = VHB = 12V VDD = VHB = 12V VSS = VHS = 0V VSS = VHS = 0V 10 10 IDDO (mA) CL = 2200 pF IDDO (mA) CL = 1000 pF CL = 1000 pF CL = 4400 pF CL = 2200 pF CL = 4400 pF 1 1 CL = 0 pF 0.1 CL = 0 pF CL = 470 pF CL = 470 pF 0.1 0.01 1 10 100 1000 1 10 FREQUENCY (kHz) 100 1000 FREQUENCY (kHz) Figure 3.
PAGE 6
LM5109A SNVS412A – APRIL 2006 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) LO and HO High Level Output Voltage vs Temperature LO and HO Low Level Output Voltage vs Temperature 0.6 1.6 Output Current : -100 mA VSS = VHS = 0V Output Current : -100 mA 1.4 VSS = VHS = 0V 0.5 1.2 VDD = VHB = 8V 1.0 VOL (V) VOH (V) VDD = VHB = 8V 0.8 0.4 VDD = VHB = 12V 0.6 VDD = VHB = 12V 0.4 0.2 0.
PAGE 7
LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 Timing Diagram LI LI HI tHPLH tLPLH HI tHPHL tLPHL LO LO HO HO tMON tMOFF Figure 15. Layout Considerations Optimum performance of high and low-side gate drivers cannot be achieved without taking due considerations during circuit board layout. The following points are emphasized: 1.
PAGE 8
LM5109A SNVS412A – APRIL 2006 – REVISED MARCH 2013 www.ti.com capacitor should be located at the leads of the IC to minimize series inductance. The peak currents from LO and HO can be quite large. Any series inductances with the bypass capacitor will cause voltage ringing at the leads of the IC which must be avoided for reliable operation.
PAGE 9
LM5109A www.ti.com SNVS412A – APRIL 2006 – REVISED MARCH 2013 REVISION HISTORY Changes from Original (March 2013) to Revision A • Page Changed layout of National Data Sheet to TI format ............................................................................................................
PAGE 10
PACKAGE OPTION ADDENDUM www.ti.
PAGE 11
PACKAGE OPTION ADDENDUM www.ti.com 14-Feb-2014 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties.
PAGE 12
PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5109AMAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5109ASD WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5109ASD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.
PAGE 13
PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5109AMAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5109ASD WSON NGT 8 1000 210.0 185.0 35.0 LM5109ASD/NOPB WSON NGT 8 1000 210.0 185.0 35.0 LM5109ASDX/NOPB WSON NGT 8 4500 367.0 367.0 35.
PAGE 14
MECHANICAL DATA NGT0008A SDC08A (Rev A) www.ti.
PAGE 15
PAGE 16
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.