Datasheet

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DRIVER

LEVEL

SHIFT

UVLO

LM5109B

www.ti.com

SNVS477B –FEBRUARY 2007–REVISED MARCH 2013

LM5109B High Voltage 1A Peak Half Bridge Gate Driver

Check for Samples: LM5109B

FEATURES

PACKAGE

• Drives Both a High-Side and Low-Side N-

• SOIC-8

Channel MOSFET

• WSON-8 (4 mm x 4 mm)

• 1A peak Output Current (1.0A Sink / 1.0A

Source) DESCRIPTION

The LM5109B is a cost effective, high voltage gate

• Independent TTL Compatible Inputs

driver designed to drive both the high-side and the

• Bootstrap Supply Voltage to 108V DC

low-side N-Channel MOSFETs in a synchronous

• Fast Propagation Times (30 ns Typical)

buck or a half bridge configuration. The floating high-

side driver is capable of working with rail voltages up

• Drives 1000 pF Load with 15ns Rise and Fall

to 90V. The outputs are independently controlled with

Times

TTL compatible input thresholds. The robust level

• Excellent Propagation Delay Matching (2 ns

shift technology operates at high speed while

Typical)

consuming low power and providing clean level

• Supply Rail Under-Voltage Lockout

transitions from the control input logic to the high-side

gate driver. Under-voltage lockout is provided on both

• Low Power Consumption

the low-side and the high-side power rails. The

• Pin Compatible with ISL6700

device is available in the SOIC-8 and the thermally

enhanced WSON-8 packages.

TYPICAL APPLICATIONS

• Current Fed Push-Pull Converters

• Half and Full Bridge Power Converters

• Solid State Motor Drives

• Two Switch Forward Power Converters

Simplified Block Diagram

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (16 pages)

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LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 LM5109B High Voltage 1A Peak Half Bridge Gate Driver Check for Samples: LM5109B FEATURES PACKAGE • • • 1 2 • • • • • • • • • Drives Both a High-Side and Low-Side NChannel MOSFET 1A peak Output Current (1.0A Sink / 1.
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LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com Connection Diagrams VDD 1 HI 2 LI 3 VSS 4 8 HB VDD 1 7 HO HI 2 6 HS LI 3 5 LO VSS 4 8 HB 7 HO 6 HS 5 LO WSON-8 SOIC-8 Figure 1. 8-Pin SOIC Package See Package Number D (R-PDSO-G8) Figure 2.
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LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 Absolute Maximum Ratings (1) (2) VDD to VSS -0.3V to 18V HB to HS −0.3V to 18V LI or HI to VSS −0.3V to VDD +0.3V LO to VSS −0.3V to VDD +0.3V HO to VSS VHS −0.3V to VHB +0.3V HS to VSS (3) −5V to 90V HB to VSS 108V Junction Temperature -40°C to +150°C Storage Temperature Range −55°C to +150°C ESD Rating HBM (4) (1) (2) (3) (4) 1.
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LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com Electrical Characteristics (continued) Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO(1). Symbol VHBH Parameter Conditions Min Typ HB Threshold Hysteresis Max 0.4 Units V LO GATE DRIVER VOLL Low-Level Output Voltage ILO = 100 mA, VOHL = VLO – VSS 0.38 0.
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LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 Typical Performance Characteristics VDD Operating Current vs Frequency 100 HB Operating Current vs Frequency 100 VDD = VHB = 12V VDD = VHB = 12V VSS = VHS = 0V VSS = VHS = 0V 10 10 IDDO (mA) CL = 2200 pF IDDO (mA) CL = 1000 pF CL = 1000 pF CL = 4400 pF CL = 2200 pF CL = 4400 pF 1 1 CL = 0 pF 0.1 CL = 0 pF CL = 470 pF CL = 470 pF 0.1 0.01 1 10 100 1000 1 10 FREQUENCY (kHz) 100 1000 FREQUENCY (kHz) Figure 3.
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LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) LO and HO High Level Output Voltage vs Temperature LO and HO Low Level Output Voltage vs Temperature 0.6 1.6 Output Current : -100 mA VSS = VHS = 0V Output Current : -100 mA 1.4 VSS = VHS = 0V 0.5 1.2 VDD = VHB = 8V 1.0 VOL (V) VOH (V) VDD = VHB = 8V 0.8 0.4 VDD = VHB = 12V 0.6 VDD = VHB = 12V 0.4 0.2 0.
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LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 Timing Diagram LI LI HI tHPLH tLPLH HI tHPHL tLPHL LO LO HO HO tMON tMOFF Figure 15. Layout Considerations Optimum performance of high and low-side gate drivers cannot be achieved without taking due considerations during circuit board layout. The following points are emphasized: 1.
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LM5109B SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 www.ti.com HS Transient Voltages Below Ground The HS node will always be clamped by the body diode of the lower external FET. In some situations, board resistances and inductances can cause the HS node to transiently swing several volts below ground. The HS node can swing below ground provided: 1. HS must always be at a lower potential than HO. Pulling HO more than -0.
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LM5109B www.ti.com SNVS477B – FEBRUARY 2007 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision A (March 2013) to Revision B • Page Changed layout of National Data Sheet to TI format ............................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5109BMAX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5109BSD/NOPB WSON NGT 8 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5109BSDX/NOPB WSON NGT 8 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5109BMAX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5109BSD/NOPB WSON NGT 8 1000 210.0 185.0 35.0 LM5109BSDX/NOPB WSON NGT 8 4500 367.0 367.0 35.
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MECHANICAL DATA NGT0008A SDC08A (Rev A) www.ti.
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