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LM5110

www.ti.com

SNVS255A –MAY 2004–REVISED MAY 2004

LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability

Check for Samples: LM5110

FEATURES

PACKAGE

• Independently Drives Two N-Channel

• SOIC-8

MOSFETs

• WSON-10 (4 mm x 4 mm)

• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation DESCRIPTION

The LM5110 Dual Gate Driver replaces industry

• 5A sink/3A Source Current Capability

standard gate drivers with improved peak output

• Two Channels can be Connected in Parallel to

current and efficiency. Each “compound” output driver

Double the Drive Current

stage includes MOS and bipolar transistors operating

• Independent Inputs (TTL Compatible)

in parallel that together sink more than 5A peak from

capacitive loads. Combining the unique

• Fast Propagation Times (25 ns Typical)

characteristics of MOS and bipolar devices reduces

• Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

drive current variation with voltage and temperature.

with 2 nF Load)

Separate input and output ground pins provide

• Dedicated Input Ground Pin (IN_REF) for Split

Negative Drive Capability allowing the user to drive

Supply or Single Supply Operation

MOSFET gates with positive and negative VGS

voltages. The gate driver control inputs are

• Outputs Swing from V

to V

which can be

referenced to a dedicated input ground (IN_REF).

Negative Relative to Input Ground

The gate driver outputs swing from V

to the output

• Available in Dual Non-inverting, Dual Inverting

ground V

which can be negative with respect to

and Combination Configurations

IN_REF. The ability to hold MOSFET gates off with a

negative VGS voltage reduces losses when driving

• Shutdown Input Provides Low Power Mode

low threshold voltage MOSFETs often used as

• Supply Rail Under-voltage Lockout Protection

synchronous rectifiers. When driving with

• Pin-out Compatible with Industry Standard

conventional positive only gate voltage, the IN_REF

Gate Drivers

and V

pins are connected together and referenced

to a common ground. Under-voltage lockout

TYPICAL APPLICATIONS

protection and a shutdown input pin are also

provided. The drivers can be operated in parallel with

• Synchronous Rectifier Gate Drivers

inputs and outputs connected to double the drive

• Switch-mode Power Supply Gate Driver

current capability. This device is available in the

• Solenoid and Motor Drivers SOIC-8 and the thermally-enhanced WSON-10

packages.

• Power Level Shifter

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (18 pages)

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LM5110 www.ti.
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LM5110 SNVS255A – MAY 2004 – REVISED MAY 2004 www.ti.com Pin Configurations IN_REF 1 8 2 7 IN_A SHDN IN_REF IN_A VEE 6 VCC IN_B 4 IN_B 5 10 2 9 3 8 4 7 5 6 SHDN OUT A OUT A VEE 3 1 Figure 1. SOIC-8 OUT_B NC NC OUT_B VCC Figure 2. WSON-10 NC - NOT CONNECTED Block Diagram VCC UVLO 18µA IN_REF SHDN OUT_A IN_A LEVEL SHIFT VEE VCC IN_B OUT_B LEVEL SHIFT IN_REF VEE Figure 3.
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LM5110 www.ti.com SNVS255A – MAY 2004 – REVISED MAY 2004 Typical Application VOUT VIN +10V +5V LM5110-1 VCC LM5110-1 VCC LM5025 CONTROLLER OUT_A IN_A IN_B OUT_B OUT_B IN_REF IN_REF OUT_B FB VEE VEE IN_B IN_A OUT_A OUT_A VEE VEE -3V Single Supply & Paralleled Inputs and Outputs Dual Supply utilizing negative Output voltage Drive Figure 4.
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LM5110 SNVS255A – MAY 2004 – REVISED MAY 2004 www.ti.com Configuration Table Part Number “A” Output Configuration “B” Output Configuration Package LM5110-1M Non-Inverting Non-Inverting SOIC- 8 LM5110-2M Inverting Inverting SOIC- 8 LM5110-3M Inverting Non-Inverting SOIC- 8 LM5110-1SD Non-Inverting Non-Inverting WSON-10 LM5110-2SD Inverting Inverting WSON-10 LM5110-3SD Inverting Non-Inverting WSON-10 These devices have limited built-in ESD protection.
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LM5110 www.ti.com SNVS255A – MAY 2004 – REVISED MAY 2004 Electrical Characteristics (continued) TJ = −40°C to +125°C, VCC = 12V, VEE = IN_REF = 0V, nSHDN = VCC, No Load on OUT_A or OUT_B, unless otherwise specified. Symbol Parameter VSDR Shutdown Threshold VSDH Shutdown Hysteresis Conditions nSHDN rising Min Typ Max Units 0.8 1.5 2.2 V 165 mV OUTPUT DRIVERS ROH Output Resistance High IOUT = −10 mA 30 50 Ω ROL Output Resistance Low IOUT = + 10 mA 1.4 2.
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LM5110 SNVS255A – MAY 2004 – REVISED MAY 2004 www.ti.com Typical Performance Characteristics Supply Current vs Frequency Supply Current vs Capacitive Load 100 1000 TA = 25°C 10 VCC = 12V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) VCC = 15V VCC = 10V VCC = 5V 1 f = 500kHz 100 10 f = 100kHz 1 TA = 25°C f = 10kHz CL = 2200pF 0.1 1 10 100 0.1 100 1000 10k 1k CAPACITIVE LOAD (pF) FREQUENCY (kHz) Figure 7. Figure 8.
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LM5110 www.ti.com SNVS255A – MAY 2004 – REVISED MAY 2004 Typical Performance Characteristics (continued) Delay Time vs Temperature RDSON vs Supply Voltage 32.5 3.25 VCC = 12V CL = 2200pF IOUT = 10mA 2.75 tD2 ROH ROL (:) TIME (ns) 27.5 55 25 tD1 45 2.25 1.75 35 ROH (:) 30 65 TA = 25°C ROL 22.5 1.25 20 25 15 0.75 17.5 -75 -50 -25 0 0 25 50 75 100 125 150 175 3 6 9 12 15 18 SUPPLY VOLTAGE (V) TEMPERATURE (°C) Figure 13. Figure 14.
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LM5110 SNVS255A – MAY 2004 – REVISED MAY 2004 www.ti.com DETAILED OPERATING DESCRIPTION LM5110 dual gate driver consists of two independent and identical driver channels with TTL compatible logic inputs and high current totem-pole outputs that source or sink current to drive MOSFET gates. The driver output consist of a compound structure with MOS and bipolar transistor operating in parallel to optimize current capability over a wide output voltage and operating temperature range.
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LM5110 www.ti.com SNVS255A – MAY 2004 – REVISED MAY 2004 Layout Considerations Attention must be given to board layout when using LM5110. Some important considerations include: 1. A Low ESR/ESL capacitor must be connected close to the IC and between the VCC and VEE pins to support high peak currents being drawn from VCC during turn-on of the MOSFET. 2. Proper grounding is crucial. The drivers need a very low impedance path for current return to ground avoiding inductive loops.
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LM5110 SNVS255A – MAY 2004 – REVISED MAY 2004 www.ti.com Assuming negligible gate resistance, the total power dissipated in the MOSFET driver due to gate charge is approximated by PDRIVER = VGATE x QG x FSW where • FSW = switching frequency of the MOSFET As an example, consider the MOSFET MTD6N15 whose gate charge specified as 30 nC for VGATE = 12V.
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LM5110 www.ti.com SNVS255A – MAY 2004 – REVISED MAY 2004 TJ(MAX) - TA ISOURCE (MAX) := TJA · VDIODE where • VDIODE is the voltage drop across hybrid output stage which varies over temperature and can be assumed to be about 1.1V at TJ(max) of 125°C Assuming the same parameters as above, this equation yields ISOURCE(max) of 347mA.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5110-1MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5110-1SD WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-1SD/NOPB WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5110-1MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5110-1SD WSON DPR 10 1000 210.0 185.0 35.0 LM5110-1SD/NOPB WSON DPR 10 1000 210.0 185.0 35.0 LM5110-1SDX/NOPB WSON DPR 10 4500 367.0 367.0 35.0 LM5110-2MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5110-2SD/NOPB WSON DPR 10 1000 210.0 185.0 35.
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MECHANICAL DATA DPR0010A SDC10A (Rev A) www.ti.
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