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UVLO

IN_A

OUT_A

OUT_B

IN_B

LM5111

www.ti.com

SNVS300G –JULY 2004–REVISED MARCH 2013

LM5111 Dual 5A Compound Gate Driver

Check for Samples: LM5111

FEATURES

DESCRIPTION

The LM5111 Dual Gate Driver replaces industry

• Independently Drives Two N-Channel

standard gate drivers with improved peak output

MOSFETs

current and efficiency. Each “compound” output driver

• Compound CMOS and Bipolar Outputs Reduce

stage includes MOS and bipolar transistors operating

Output Current Variation

in parallel that together sink more than 5A peak from

capacitive loads. Combining the unique

• 5A Sink/3A Source Current Capability

characteristics of MOS and bipolar devices reduces

• Two Channels can be Connected in Parallel to

drive current variation with voltage and temperature.

Double the Drive Current

Under-voltage lockout protection is also provided.

• Independent Inputs (TTL Compatible)

The drivers can be operated in parallel with inputs

and outputs connected to double the drive current

• Fast Propagation Times (25 ns Typical)

capability. This device is available in the SOIC

• Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

package or the thermally enhanced VSSOP package.

with 2 nF Load)

• Available in Dual Non-Inverting, Dual Inverting

TYPICAL APPLICATIONS

and Combination Configurations

• Synchronous Rectifier Gate Drivers

• Supply Rail Under-Voltage Lockout Protection

• Switch-mode Power Supply Gate Driver

(UVLO)

• Solenoid and Motor Drivers

• LM5111-4 UVLO Configured to Drive PFET

through OUT_A and NFET through OUT_B

PACKAGES

• Pin Compatible with Industry Standard Gate

• SOIC-8

Drivers

• Thermally Enhanced VSSOP

Block Diagram

Figure 1. Block Diagram of LM5111

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (20 pages)

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LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 LM5111 Dual 5A Compound Gate Driver Check for Samples: LM5111 FEATURES DESCRIPTION • The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads.
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LM5111 SNVS300G – JULY 2004 – REVISED MARCH 2013 www.ti.com Connection Diagram 1 8 2 7 3 6 4 5 NC IN_A VEE IN_B NC OUT A VCC OUT_B Figure 2. 8-Lead SOIC or VSSOP PIN DESCRIPTIONS Pin Name Description Application Information 1 NC No Connect 2 IN_A ‘A’ side control input TTL compatible thresholds. 3 VEE Ground reference for both inputs and outputs Connect to power ground. 4 IN_B ‘B’ side control input TTL compatible thresholds. 5 OUT_B Output for the ‘B’ side driver.
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LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 Absolute Maximum Ratings (1) (2) −0.3V to 15V VCC to VEE −0.3V to 15V IN to VEE −55°C to +150°C Storage Temperature Range, (TSTG) Maximum Junction Temperature, (TJ(max)) +150°C Operating Junction Temperature +125°C ESD Rating (1) (2) 2kV Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional.
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LM5111 SNVS300G – JULY 2004 – REVISED MARCH 2013 www.ti.com Electrical Characteristics TJ = −40°C to +125°C, VCC = 12V, VEE = 0V, No Load on OUT_A or OUT_B, unless otherwise specified. Symbol Parameter Conditions Min VCC−VEE 3.5 VCCR VCC Under Voltage Lockout (rising) VCC−VEE 2.3 VCCH VCC Under Voltage Lockout Hysteresis VCC Operating Range ICC VCC Supply Current (ICC) Typ Max Units 14 V 2.9 3.
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LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 Timing Waveforms INPUT INPUT OUTPUT 50% 50% 50% 50% tD1 tD2 tD1 tD2 90% 90% OUTPUT 10% 10% tf tr tr Figure 3. Inverting tf Figure 4.
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LM5111 SNVS300G – JULY 2004 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics Supply Current vs Frequency Supply Current vs Capacitive Load 1000 100 TA = 25°C 10 VCC = 12V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) VCC = 15V VCC = 10V VCC = 5V 1 f = 500kHz 100 10 f = 100kHz 1 TA = 25°C f = 10kHz CL = 2200pF 0.1 100 0.1 1 10 100 1000 10k 1k CAPACITIVE LOAD (pF) FREQUENCY (kHz) Figure 5. Figure 6.
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LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Delay Time vs Temperature RDSON vs Supply Voltage 32.5 3.25 VCC = 12V CL = 2200pF IOUT = 10mA 2.75 tD2 ROH ROL (:) TIME (ns) 27.5 55 25 tD1 45 2.25 1.75 35 22.5 ROH (:) 30 65 TA = 25°C ROL 1.25 20 17.5 25 15 0.75 -75 -50 -25 0 3 0 25 50 75 100 125 150 175 TEMPERATURE (°C) 6 9 12 15 18 SUPPLY VOLTAGE (V) Figure 11. Figure 12.
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LM5111 SNVS300G – JULY 2004 – REVISED MARCH 2013 www.ti.com The two driver channels of the LM5111 are designed as identical cells. Transistor matching inherent to integrated circuit manufacturing ensures that the AC and DC peformance of the channels are nearly identical. Closely matched propagation delays allow the dual driver to be operated as a single with inputs and output pins connected. The drive current capability in parallel operation is precisely 2X the drive of an individual channel.
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LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 Thermal Performance INTRODUCTION The primary goal of thermal management is to maintain the integrated circuit (IC) junction temperature (TJ) below a specified maximum operating temperature to ensure reliability. It is essential to estimate the maximum TJ of IC components in worst case operating conditions.
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LM5111 SNVS300G – JULY 2004 – REVISED MARCH 2013 www.ti.com Characterization of the LM5111 provides accurate estimates of the transient and quiescent power dissipation components. At 300 kHz switching frequency and 30 nC load used in the example, the transient power will be 8 mW. The 1 mA nominal quiescent current and 12V VGATE supply produce a 12 mW typical quiescent power. Therefore the total power dissipation PD = 0.216 + 0.008 + 0.012 = 0.236W.
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LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision F (March 2013) to Revision G • Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LM5111-1MX Package Package Pins Type Drawing SOIC SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5111-1MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5111-1MY/NOPB MSOPPower PAD DGN 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant Power PAD LM5111-4MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5111-4MY/NOPB MSOPPower PAD DGN 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM5111-4MYX/NOPB MSOPPower PAD DGN 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5111-3MY/NOPB MSOP-PowerPAD DGN 8 1000 210.0 185.0 35.0 LM5111-3MYX/NOPB MSOP-PowerPAD DGN 8 3500 367.0 367.0 35.0 LM5111-4MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5111-4MY/NOPB MSOP-PowerPAD DGN 8 1000 210.0 185.0 35.0 LM5111-4MYX/NOPB MSOP-PowerPAD DGN 8 3500 367.0 367.0 35.
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MECHANICAL DATA DGN0008A MUY08A (Rev A) BOTTOM VIEW www.ti.
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