Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - gate drivers Inverting, Non-inverting Low side WSON 6 (3x3)

OUT

INB

IN_REF

UVLO

Level

Shift

LM5112

www.ti.com

SNVS234B –SEPTEMBER 2004–REVISED APRIL 2006

LM5112 Tiny 7A MOSFET Gate Driver

Check for Samples: LM5112

FEATURES

DESCRIPTION

The LM5112 MOSFET gate driver provides high peak

• Compound CMOS and Bipolar Outputs Reduce

gate drive current in the tiny WSON-6 package (SOT-

Output Current Variation

23 equivalent footprint) or an 8-Lead exposed-pad

• 7A sink/3A Source Current

MSOP package, with improved power dissipation

• Fast Propagation Times (25 ns Typical)

required for high frequency operation. The compound

output driver stage includes MOS and bipolar

• Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

transistors operating in parallel that together sink

with 2 nF Load)

more than 7A peak from capacitive loads. Combining

• Inverting and Non-inverting Inputs Provide

the unique characteristics of MOS and bipolar

Either Configuration with a Single Device

devices reduces drive current variation with voltage

and temperature. Under-voltage lockout protection is

• Supply Rail Under-voltage Lockout Protection

provided to prevent damage to the MOSFET due to

• Dedicated Input Ground (IN_REF) for Split

insufficient gate turn-on voltage. The LM5112

Supply or Single Supply Operation

provides both inverting and non-inverting inputs to

• Power Enhanced 6-pin WSON Package (3.0mm

satisfy requirements for inverting and non-inverting

x 3.0mm) or Thermally Enhanced MSOP-

gate drive with a single device type.

PowerPAD Package

• Output Swings from V

to V

Which can be

Negative Relative to Input Ground

Block Diagram

Figure 1. Block Diagram of LM5112

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (16 pages)

PAGE 1
LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 LM5112 Tiny 7A MOSFET Gate Driver Check for Samples: LM5112 FEATURES DESCRIPTION • The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint) or an 8-Lead exposed-pad MSOP package, with improved power dissipation required for high frequency operation.
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LM5112 SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 www.ti.com Pin Configurations IN VEE VCC 6 1 INB IN_REF 2 IN_REF 1 8 N/C INB 2 7 OUT VEE 3 6 VCC IN 4 5 N/C 5 4 3 OUT Figure 2. WSON-6 Figure 3. MSOP-PowerPAD-8 PIN DESCRIPTIONS Pin Name Description Application Information WSON-6 MSOP-8 1 4 IN Non-inverting input pin TTL compatible thresholds. Pull up to VCC when not used.
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LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 Absolute Maximum Ratings (1) (2) VCC to VEE −0.3V to 15V VCC to IN_REF −0.3V to 15V IN/INB to IN_REF −0.3V to 15V −0.3V to 5V IN_REF to VEE −55°C to +150°C Storage Temperature Range Maximum Junction Temperature +150°C Operating Junction Temperature −40°C+125°C ESD Rating (1) (2) 2kV Absolute Maximum Ratings are limits beyond which damage to the device may occur.
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LM5112 SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 www.ti.com Electrical Characteristics (continued) TJ = −40°C to +125°C, VCC = 12V, INB = IN_REF = VEE = 0V, No Load on output, unless otherwise specified.
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LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 Typical Performance Characteristics Supply Current vs Frequency 100 Supply Current vs Capacitive Load 100 f = 500kHz SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) VCC = 15V 10 VCC = 10V 1 VCC = 5V 10 f = 100kHz 1 f = 10kHz TA = 25°C TA = 25°C VCC = 12V CL = 2200pF 0.1 1 0.1 10 100 1000 CAPACITIVE LOAD (pF) FREQUENCY (kHz) Figure 6. Figure 7.
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LM5112 SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 www.ti.com Typical Performance Characteristics (continued) Delay Time vs Temperature 35 RDSON vs Supply Voltage 3.25 65 VCC = 12V 32.5 TA = 25°C CL = 2200pF IOUT = 10mA 2.75 tD2 55 25 tD1 45 2.25 ROH 1.75 35 ROH (:) 27.5 ROL (:) TIME (ns) 30 22.5 1.25 17.5 -75 -50 -25 0 15 0.75 25 50 75 100 125 150 175 3 0 TEMPERATURE (°C) 9 12 15 Figure 13.
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LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 Simplified Application Block Diagram VOUT VIN +10V +5V VCC LM5110-1 VCC UVLO LM5025 CONTROLLER IN_REF IN_REF IN OUT INB OUT_B OUT_B IN_REF IN_REF FB VEE INB OUT_A IN_A OUT_A VEE VEE LM5112 -3V Dual Supply utilizing negative Output voltage Drive Figure 16. Simplified Application Block Diagram DETAILED OPERATING DESCRIPTION The LM5112 is a high speed , high peak current (7A) single channel MOSFET driver.
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LM5112 SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 www.ti.com The minimum recommended operating voltage between Vcc and IN_REF is 3.5V. An Under Voltage Lock Out (UVLO) circuit is included in the LM5112 which senses the voltage difference between VCC and the input ground pin, IN_REF. When the VCC to IN_REF voltage difference falls below 2.8V the driver is disabled and the output pin is held in the low state.
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LM5112 www.ti.com SNVS234B – SEPTEMBER 2004 – REVISED APRIL 2006 where • FSW = switching frequency of the MOSFET (1) For example, consider the MOSFET MTD6N15 whose gate charge specified as 30 nC for VGATE = 12V. Therefore, the power dissipation in the driver due to charging and discharging of MOSFET gate capacitances at switching frequency of 300 kHz and VGATE of 12V is equal to PDRIVER = 12V x 30 nC x 300 kHz = 0.108W.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com (4) 1-Nov-2013 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5112MY MSOPPower PAD DGN 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM5112MY/NOPB MSOPPower PAD DGN 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM5112MYX/NOPB MSOPPower PAD DGN 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5112MY MSOP-PowerPAD DGN 8 1000 210.0 185.0 35.0 LM5112MY/NOPB MSOP-PowerPAD DGN 8 1000 210.0 185.0 35.0 LM5112MYX/NOPB MSOP-PowerPAD DGN 8 3500 367.0 367.0 35.0 LM5112Q1SD/NOPB WSON NGG 6 1000 210.0 185.0 35.0 LM5112Q1SDX/NOPB WSON NGG 6 4500 367.0 367.0 35.0 LM5112SD WSON NGG 6 1000 210.
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MECHANICAL DATA DGN0008A MUY08A (Rev A) BOTTOM VIEW www.ti.
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MECHANICAL DATA NGG0006A SDE06A (Rev A) www.ti.
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