Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - gate drivers Inverting, Non-inverting Low side WSON 6 (3x3)

P_OUT

INB

VSS

UVLO

VDD

DRIVER

N_OUT

Power-off

pull-down

clamp

UVLO

LM5114

www.ti.com

SNVS790E –JANUARY 2012–REVISED MARCH 2013

LM5114 Single 7.6A Peak Current Low-Side Gate Driver

Check for Samples: LM5114

FEATURES

DESCRIPTION

The LM5114 is designed to drive low-side MOSFETs

• Independent Source and Sink Outputs for

in boost type configurations or to drive secondary

Controllable Rise and Fall Times

synchronous MOSFETs in isolated topologies. With

• +4V to +12.6V Single Power Supply

strong sink current capability, the LM5114 can drive

• 7.6A/1.3A Peak Sink/Source Drive Current

multiple FETs in parallel. The LM5114 also has the

features necessary to drive low-side enhancement

• 0.23Ω Open-drain Pull-down Sink Output

mode Gallium Nitride (GaN) FETs. The LM5114

• 2Ω Open-drain Pull-up Source Output

provides inverting and non-inverting inputs to satisfy

• 12ns (Typical) Propagation Delay

requirements for inverting and non-inverting gate

drive in a single device type. The inputs of the

• Matching Delay Time Between Inverting and

LM5114 are TTL/CMOS Logic compatible and

Non-inverting Inputs

withstand the input voltages up to 14V regardless of

• TTL/CMOS Logic Inputs

the VDD voltage. The LM5114 has split gate outputs,

• 0.68V Input Hysteresis

providing flexibility to adjust the turn-on and turn-off

strength independently. The LM5114 has fast

• Up to +14V Logic Inputs (Regardless of VDD

switching speed and minimized propagation delays,

Voltage)

facilitating high-frequency operation. The LM5114 is

• Low Input Capacitance: 2.5pF (Typical)

available in SOT-23 6-pin package and WQFN-6

• -40°C to +125°C Operating Temperature Range

package with an exposed pad to aid thermal

dissipation.

• Pin-to-Pin Compatible with MAX5048

PACKAGES

APPLICATIONS

• SOT-23-6

• Boost Converters

• WQFN-6 (3mm x 3mm)

• Flyback and Forward Converters

• Secondary Synchronous FETs Drive in

Isolated Topologies

• Motor Control

Block Diagram

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (20 pages)

PAGE 1
LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 LM5114 Single 7.6A Peak Current Low-Side Gate Driver Check for Samples: LM5114 FEATURES DESCRIPTION • The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs.
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LM5114 SNVS790E – JANUARY 2012 – REVISED MARCH 2013 www.ti.com Input Options Base Part Number Input Thresholds LM5114A CMOS LM5114B TTL Truth Table IN INB P_OUT N_OUT L L OPEN L L H OPEN L H L H OPEN H H OPEN L Connection Diagram SOT-23 WQFN-6 VDD 1 6 IN P_OUT 2 5 N_OUT 3 4 VDD 1 6 IN INB P_OUT 2 5 INB VSS N_OUT 3 4 VSS Exposed Pad PIN DESCRIPTIONS Pin No.
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LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 Absolute Maximum Ratings (1) −0.3 to 14V VDD to VSS IN, INB to VSS −0.3 to 14V N_OUT to VSS −0.3 to VDD +0.3V P_OUT to VSS −0.3 to VDD +0.3V Junction Temperature +150°C −55 to +150°C Storage Temperature Range ESD Rating HBM (1) 2kV Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
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LM5114 SNVS790E – JANUARY 2012 – REVISED MARCH 2013 www.ti.com Electrical Characteristics (continued) Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD = +12V (1).
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LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 Electrical Characteristics (continued) Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise specified, VDD = +12V (1).
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LM5114 SNVS790E – JANUARY 2012 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics 6 Source Current vs. Output Voltage Sink Current vs. Output Voltage Figure 1. Figure 2. Peak Source Current vs. VDD Voltage Peak Sink Current vs. VDD Voltage Figure 3. Figure 4. LM5114A Turn-On Propagation Delay vs. VDD LM5114A Turn-Off Propagation Delay vs. VDD Figure 5. Figure 6.
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LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 Typical Performance Characteristics (continued) LM5114B Turn-On Propagation Delay vs. VDD LM5114B Turn-Off Propagation Delay vs. VDD Figure 7. Figure 8. UVLO Threshold vs. Temperature Quiescent Current vs. Temperature Figure 9. Figure 10. Supply Current vs. Frequency Supply Current vs. Capacitive Load Figure 11. Figure 12.
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LM5114 SNVS790E – JANUARY 2012 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) 8 Input Voltage vs. Output Voltage (VDD = 4V, CL = 5000pF) Input Voltage vs. Output Voltage (VDD = 4V, CL = 5000pF) Figure 13. Figure 14. Input Voltage vs. Output Voltage (VDD = 12V, CL = 5000pF) Input Voltage vs. Output Voltage (VDD = 12V, CL = 5000pF) Figure 15. Figure 16. Input Voltage vs. Output Voltage (VDD = 4V, CL = 10000pF) Input Voltage vs.
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LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 Typical Performance Characteristics (continued) Input Voltage vs. Output Voltage (VDD = 12V, CL = 10000pF) Input Voltage vs. Output Voltage (VDD = 12V, CL = 10000pF) Figure 19. Figure 20.
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LM5114 SNVS790E – JANUARY 2012 – REVISED MARCH 2013 www.ti.com TYPICAL APPLICATIONS VDD P_OUT PWM IN LM5114 N_OUT INB VSS Figure 21. Non-inverting Application VDD P_OUT PWM IN LM5114 N_OUT EN INB VSS Figure 22. Non-Inverting Application with Enable Pin VDD P_OUT IN LM5114 N_OUT PWM INB VSS Figure 23.
PAGE 11
LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 VDD P_OUT EN IN PWM LM5114 N_OUT INB VSS Figure 24. Inverting Application with Enable Pin VIN VOUT VDD P_OUT PWM IN + LM5114 N_OUT INB VSS Figure 25. A Simplified Boost Converter Detailed Operating Description The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies.
PAGE 12
LM5114 SNVS790E – JANUARY 2012 – REVISED MARCH 2013 www.ti.com Power Dissipation It is important to keep the power consumption of the driver below the maximum power dissipation limit of the package at the operating temperature. The total power dissipation of the LM5114 is the sum of the gate charge losses and the losses in the driver due to the internal CMOS stages used to buffer the output as well as the power losses associated with the quiescent current.
PAGE 13
LM5114 www.ti.com SNVS790E – JANUARY 2012 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision D (March 2013) to Revision E • Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
PAGE 16
PACKAGE MATERIALS INFORMATION www.ti.com 8-Jan-2014 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ B0 (mm) K0 (mm) P1 (mm) LM5114AMF/NOPB SOT-23 DBV 6 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3 LM5114AMF/S7003109 SOT-23 DBV 6 1000 178.0 LM5114AMFX/NOPB SOT-23 DBV 6 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q2 8.4 3.2 3.2 1.4 4.0 8.0 LM5114AMFX/S7003103 SOT-23 DBV 6 3000 Q3 178.0 8.4 3.2 3.2 1.4 4.0 8.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Jan-2014 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5114AMF/NOPB SOT-23 DBV 6 1000 210.0 185.0 35.0 LM5114AMF/S7003109 SOT-23 DBV 6 1000 210.0 185.0 35.0 LM5114AMFX/NOPB SOT-23 DBV 6 3000 210.0 185.0 35.0 LM5114AMFX/S7003103 SOT-23 DBV 6 3000 210.0 185.0 35.0 LM5114ASD/NOPB WSON NGG 6 1000 210.0 185.0 35.0 LM5114ASDX/NOPB WSON NGG 6 4500 367.
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MECHANICAL DATA NGG0006A SDE06A (Rev A) www.ti.
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