Datasheet

LM6152, LM6154
www.ti.com SNOS752D –MAY 1999–REVISED MARCH 2013
LM6152/LM6154 Dual and Quad 75 MHz GBW Rail-to-Rail I/O Operational Amplifiers
Check for Samples: LM6152, LM6154
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FEATURES
DESCRIPTION
Using patented circuit topologies, the
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• At V
S
= 5V, typical unless noted.
LM6152/LM6154 provides new levels of speed vs.
• Greater than rail-to-rail input CMVR −0.25V to
power performance in applications where low voltage
5.25V
supplies or power limitations previously made
• Rail-to-rail output swing 0.01V to 4.99V
compromise necessary. With only 1.4 mA/amplifier
supply current, the 75 MHz gain bandwidth of this
• Wide gain-bandwidth 75 MHz @ 100 kHz
device supports new portable applications where
• Slew rate
higher power devices unacceptably drain battery life.
– Small signal 5 V/µs
The slew rate of the devices increases with
increasing input differential voltage, thus allowing the
– Large signal 45 V/µs
device to handle capacitive loads while maintaining
• Low supply current 1.4 mA/amplifier
large signal amplitude.
• Wide supply range 2.7V to 24V
The LM6152/LM6154 can be driven by voltages that
• Fast settling time of 1.1 µs for 2V step (to
exceed both power supply rails, thus eliminating
0.01%)
concerns about exceeding the common-mode voltage
• PSRR 91 dB
range. The rail-to-rail output swing capability provides
the maximum possible dynamic range at the output.
• CMRR 84 dB
This is particularly important when operating on low
supply voltages.
APPLICATIONS
Operating on supplies from 2.7V to over 24V, the
• Portable high speed instrumentation
LM6152/LM6154 is excellent for a very wide range of
• Signal conditioning amplifier/ADC buffers
applications, from battery operated systems with
large bandwidth requirements to high speed
• Barcode scanners
instrumentation.
Connection Diagrams
Top View Top View
Figure 1. 8-Pin SOIC Package Figure 2. 14-Pin SOIC Package
See Package Number D0008A See Package Number D0014A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1999–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.