Datasheet

LM8272
www.ti.com
SNOS515D OCTOBER 2000REVISED MARCH 2013
LM8272 Dual RRIO, High Output Current & Unlimited Cap Load Op Amp in Miniature
Package
Check for Samples: LM8272
1
FEATURES
DESCRIPTION
The LM8272 is a Rail-to-Rail input and output Op
2
(V
S
= 12V, T
A
= 25°C, Typical values unless
Amp which can operate with a wide supply voltage
specified).
range. This device has high output current drive,
GBWP 15MHz
greater than Rail-to-Rail input common mode voltage
Wide supply voltage range 2.5V to 24V
range, unlimited capacitive load drive capability while
requiring only 0.95mA/channel supply current. It is
Slew rate 15V/µs
specifically designed to handle the requirements of
Supply current/channel 0.95mA
flat panel TFT panel V
COM
driver applications as well
Cap load tolerance Unlimited
as being suitable for other low power, and medium
speed applications which require ease of use and
Output short circuit current ±130mA
enhanced performance over existing devices.
Output current (1V from rails) ±65mA
Greater than Rail-to-Rail input common mode voltage
Input common mode voltage 0.3V beyond rails
range with 50dB of Common Mode Rejection, allows
Input voltage noise 15nV/Hz
high side and low side sensing, among many
Input current noise 1.4pA/Hz
applications, without having any concerns over
exceeding the range and no compromise in accuracy.
Exceptionally wide operating supply voltage range of
APPLICATIONS
2.5V to 24V alleviates any concerns over functionality
TFT-LCD flat panel V
COM
driver
under extreme conditions and offers flexibility of use
A/D converter buffer
in multitude of applications. In addition, most device
parameters are insensitive to power supply variations;
High side/low side sensing
this design enhancement is yet another step in
Headphone amplifier
simplifying its usage.
The LM8272 is offered in the 8-pin VSSOP package.
Connection Diagram
Figure 1. 8-Pin VSSOP Figure 2. Large Signal Step Response for Various
Cap. Load
Top View
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
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2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2000–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

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