Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Audio VSSOP 8

LM833-N

www.ti.com

SNOSBD8E –MAY 2004–REVISED MAY 2012

LM833-N Dual Audio Operational Amplifier

Check for Samples: LM833-N

FEATURES

DESCRIPTION

The LM833-N is a dual general purpose operational

• Wide Dynamic Range: >140dB

amplifier designed with particular emphasis on

• Low Input Noise Voltage: 4.5nV/√Hz

performance in audio systems.

• High Slew Rate: 7 V/μs (typ); 5V/μs (Min)

This dual amplifier IC utilizes new circuit and

• High Gain Bandwidth: 15MHz (typ); 10MHz

processing techniques to deliver low noise, high

(Min)

speed and wide bandwidth without increasing

external components or decreasing stability. The

• Wide Power Bandwidth: 120KHz

LM833-N is internally compensated for all closed loop

• Low Distortion: 0.002%

gains and is therefore optimized for all preamp and

• Low Offset Voltage: 0.3mV

high level stages in PCM and HiFi systems.

• Large Phase Margin: 60°

The LM833-N is pin-for-pin compatible with industry

• Available in 8 Pin VSSOP Package

standard dual operational amplifiers.

Schematic Diagram

(1/2 LM833-N)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (24 pages)

PAGE 1
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 LM833-N Dual Audio Operational Amplifier Check for Samples: LM833-N FEATURES DESCRIPTION • • • • The LM833-N is a dual general purpose operational amplifier designed with particular emphasis on performance in audio systems. 1 2 • • • • • Wide Dynamic Range: >140dB Low Input Noise Voltage: 4.5nV/√Hz High Slew Rate: 7 V/μs (typ); 5V/μs (Min) High Gain Bandwidth: 15MHz (typ); 10MHz (Min) Wide Power Bandwidth: 120KHz Low Distortion: 0.
PAGE 2
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com Connection Diagram Figure 1. See Package Number D0008A, P0008E or DGK0008A These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
PAGE 3
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 DC ELECTRICAL CHARACTERISTICS (1) (2) (TA = 25°C, VS = ±15V) Symbol Parameter Conditions Min Typ Units VOS Input Offset Voltage 0.
PAGE 4
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS Maximum Power Dissipation vs Ambient Temperature Input Bias Current vs Ambient Temperature Figure 2. Figure 3. Input Bias Current vs Supply Voltage 4 Supply Current vs Supply Voltage Figure 4. Figure 5. DC Voltage Gain vs Ambient Temperature DC Voltage Gain vs Supply Voltage Figure 6. Figure 7.
PAGE 5
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Voltage Gain & Phase vs Frequency Gain Bandwidth Product vs Ambient Temperature Figure 8. Figure 9. Gain Bandwidth vs Supply Voltage Slew Rate vs Ambient Temperature Figure 10. Figure 11. Slew Rate vs Supply Voltage Power Bandwidth Figure 12. Figure 13.
PAGE 6
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 6 CMR vs Frequency Distortion vs Frequency Figure 14. Figure 15. PSRR vs Frequency Maximum Output Voltage vs Supply Voltage Figure 16. Figure 17. Maximum Output Voltage vs Ambient Temperature Spot Noise Voltage vs Frequency Figure 18. Figure 19.
PAGE 7
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Spot Noise Current vs Frequency Input Referred Noise Voltage vs Source Resistance Figure 20. Figure 21. Noninverting Amp Noninverting Amp Figure 22. Figure 23. Inverting Amp Figure 24.
PAGE 8
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com APPLICATION HINTS The LM833-N is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 50 pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable. Capacitive loads greater than 50 pF must be isolated from the output. The most straightforward way to do this is to put a resistor in series with the output.
PAGE 9
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 RIAA Noise Voltage Measurement Circuit RIAA Preamp Voltage Gain, RIAA Deviation vs Frequency Figure 26. Flat Amp Voltage Gain vs Frequency Figure 27.
PAGE 10
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com Typical Applications AV = 34.5 F = 1 kHz En = 0.38 μV A Weighted Figure 28. NAB Preamp Figure 29. NAB Preamp Voltage Gain vs Frequency VO = V1–V2 Figure 30.
PAGE 11
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 VO = V1 + V2 − V3 − V4 Figure 31. Adder/Subtracter Figure 32. Sine Wave Oscillator Illustration is f0 = 1 kHz Figure 33.
PAGE 12
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com Illustration is f0 = 1 kHz Figure 34. Second Order Low Pass Filter (Butterworth) Illustration is f0 = 1 kHz, Q = 10, ABP = 1 Figure 35. State Variable Filter Figure 36.
PAGE 13
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 Figure 37. 2 Channel Panning Circuit (Pan Pot) Figure 38.
PAGE 14
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com Illustration is: fL = 32 Hz, fLB = 320 Hz fH =11 kHz, fHB = 1.1 kHz Figure 39. Tone Control Av = 35 dB En = 0.33 μV S/N = 90 dB f = 1 kHz A Weighted A Weighted, VIN = 10 mV @f = 1 kHz Figure 40.
PAGE 15
LM833-N www.ti.com SNOSBD8E – MAY 2004 – REVISED MAY 2012 Illustration is: V0 = 101(V2 − V1) Figure 41.
PAGE 16
LM833-N SNOSBD8E – MAY 2004 – REVISED MAY 2012 www.ti.com Figure 42. 10 Band Graphic Equalizer fo (Hz) C1 C2 R1 R2 32 0.12μF 4.7μF 75kΩ 500Ω 64 0.056μF 3.3μF 68kΩ 510Ω 125 0.033μF 1.5μF 62kΩ 510Ω 250 0.015μF 0.82μF 68kΩ 470Ω 500 8200pF 0.39μF 62kΩ 470Ω 1k 3900pF 0.22μF 68kΩ 470Ω 2k 2000pF 0.1μF 68kΩ 470Ω 4k 1100pF 0.056μF 62kΩ 470Ω 8k 510pF 0.022μF 68kΩ 510Ω 16k 330pF 0.012μF 51kΩ 510Ω Note: At volume of change = ±12 dB Q = 1.
PAGE 17
PACKAGE OPTION ADDENDUM www.ti.
PAGE 18
PACKAGE OPTION ADDENDUM www.ti.com (4) 18-Oct-2013 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.
PAGE 19
PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM833MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM833MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM833MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.
PAGE 20
PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM833MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LM833MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0 LM833MX SOIC D 8 2500 367.0 367.0 35.0 LM833MX/NOPB SOIC D 8 2500 367.0 367.0 35.
PAGE 21
PAGE 22
PAGE 23
PAGE 24
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.