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LM9061

www.ti.com

SNOS738F –APRIL 1995–REVISED APRIL 1995

LM9061 Power MOSFET Driver with Lossless Protection

Check for Samples: LM9061

FEATURES

DESCRIPTION

The LM9061 is a charge-pump device which provides

• Built-In Charge Pump for Gate Overdrive of

the gate drive to any size external power MOSFET

High Side Drive Applications

configured as a high side driver or switch. A CMOS

• Lossless Protection of the Power MOSFET

logic compatible ON/OFF input controls the output

• Programmable MOSFET Protection Voltage

gate drive voltage. In the ON state, the charge pump

voltage, which is well above the available V

supply,

• Programmable Delay of Protection Latch-OFF

is directly applied to the gate of the MOSFET. A built-

• Fast Turn-ON (1.5 ms Max with Gate

in 15V zener clamps the maximum gate to source

Capacitance of 25000 pF)

voltage of the MOSFET. When commanded OFF a

• Overvoltage Shut OFF with V

> 26V

110 µA current sink discharges the gate capacitances

of the MOSFET for a gradual turn-OFF characteristic

• Withstands 60V Supply Transients

to minimize the duration of inductive load transient

• CMOS Logic Compatible ON/OFF Control Input

voltages and further protect the power MOSFET.

• Available in 8-pin SOIC (SO-8) Package

Lossless protection of the power MOSFET is a key

feature of the LM9061. The voltage drop (V

) across

APPLICATIONS

the power device is continually monitored and

compared against an externally programmable

• Valve, Relay and Solenoid Drivers

threshold voltage. A small current sensing resistor in

• Lamp Drivers

series with the load, which causes a loss of available

• DC Motor PWM Drivers

energy, is not required for the protection circuitry.

• Logic Controlled Power Supply Distribution

Should the V

voltage, due to excessive load

current, exceed the threshold voltage, the output is

Switch

latched OFF in a more gradual fashion (through a 10

• Electronic Circuit Breaker

µA output current sink) after programmable delay

time interval.

The LM9061 has a wide operating temperature range

of −40°C to +125°C, remains operational with V

to 26V, and can withstand 60V power supply

transients. The LM9061 is available in an 8-pin small

outline surface mount package.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (26 pages)

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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 LM9061 Power MOSFET Driver with Lossless Protection Check for Samples: LM9061 FEATURES DESCRIPTION • The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com Typical Application Figure 1. Connection Diagram Top View Figure 2. SOIC Package See Package Number D0008A PIN DESCRIPTIONS Pin # Pin Symbol Pin Description 1 Sense The inverting input to the protection comparator, connected to the external MOSFET source pin and the load.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 ABSOLUTE MAXIMUM RATINGS (1) (2) Supply Voltage 60V Reverse Supply Current 20 mA Output Voltage VCC +15V −25V to +60V Voltage at Sense and Threshold (through 1 kΩ) −0.3V to VCC +0.3V ON/OFF Input Voltage Junction Temperature 150°C Storage Temperature −55°C to +150°C Lead Temperature Soldering, 10 seconds (1) (2) 260°C Absolute Maximum Ratings indicate the limits beyond which damage to the device may occur.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com DC ELECTRICAL CHARACTERISTICS (continued) 7V ≤ VCC ≤20V, RREF = 15.4 kΩ, −40°C ≤ TJ ≤ +125°C, unless otherwise specified. Symbol Parameter Conditions IDELAY Delay Pin Source Current VTIMER Delay Timer Threshold Voltage IDIS Delay Capacitor Discharge Current VDELAY = 5V VSAT Discharge Transistor Saturation Voltage IDIS = 1 mA Min Max Units 6.74 15.44 µA 5 6.2 V 2 10 mA 0.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 TYPICAL OPERATING WAVEFORMS Figure 3.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com TIMING DEFINITIONS Figure 4.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 TYPICAL ELECTRICAL CHARACTERISTICS Standby Supply Current vs VCC Operating Supply Current vs VCC Figure 5. Figure 6. Output Voltage vs VCC Output Sink Current vs Temperature Figure 7. Figure 8. Output Sink Current vs Temperature Output Source Current vs Output Voltage Figure 9. Figure 10.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com TYPICAL ELECTRICAL CHARACTERISTICS (continued) Reference Voltage vs Temperature Delay Threshold vs Temperature Figure 11. Figure 12. Delay Charge Current vs Temperature Figure 13.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 BLOCK DIAGRAM Figure 14.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com APPLICATION INFORMATION BASIC OPERATION The LM9061 contains a charge pump circuit that generates a voltage in excess of the applied supply voltage to provide gate drive voltage to power MOSFET transistors. Any size of N-channel power MOSFET, including multiple parallel connected MOSFETs for very high current applications, can be used to apply power to a ground referenced load circuit in what is referred to as “high side drive” applications.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 TURN ON AND TURN OFF CHARACTERISTICS The actual rate of change of the voltage applied to the gate of the power device is directly dependent on the input capacitances of the MOSFET used. These times are important to know if the power to the load is to be applied repetitively as is the case with pulse width modulation drive. Of concern are the capacitances from gate to drain, CGD, and from gate to source, CGS.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com Figure 16. Turn ON and Turn OFF Waveforms To protect the MOSFET from exceeding its maximum junction temperature rating, the power dissipation needs to be limited. The maximum power dissipation allowed (derated for temperature) and the maximum drain to source ON resistance, RDS(ON), with both at the maximum operating ambient temperature, needs to be determined.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 The threshold voltage is set by the voltage drop across resistor RTHRESHOLD. A reference current is fixed by a resistor to ground at IREF, pin 6. To precisely regulate the reference current over temperature, a stable band gap reference voltage is provided to bias a constant current sink. The reference current is set by: (4) The reference current sink output is internally connected to the threshold pin.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com The resistor RSENSE is optional, but is strongly recommended to provide transient protection for the Sense pin, especially when driving inductive type loads. A minimum value of 1 kΩ will protect the pin from transients ranging from −25V to +60V. This resistor should be equal to, or less than, the resistor used for RTHRESHOLD. Never set RSENSE to a value larger than RTHRESHOLD.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 MINIMUM DELAY TIME A minimum delay time interval is required in all applications due to the nature of the protection circuitry. At the instant the MOSFET is commanded ON, the voltage across the MOSFET, VDS, is equal to the full load supply voltage because the source is held at ground by the load. This condition will immediately trip the protection comparator.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com REVERSE BATTERY The LM9061 is not protected against reverse polarity supply connections. If the VCC supply should be taken negative with respect to ground, the current from the VCC pin should be limited to 20 mA. The addition of a diode in series with the VCC input is recommended. This diode drop does not subtract significantly from the charge pump gate overdrive output voltage.
PAGE 17
LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 This voltage divider arrangement requires a mechanism to raise the ON/OFF pin above the 'On' threshold of 3.5V minimum (3.1V typical) when VCC is less than typically 16V. This can be accomplished with a second, normally open, switch from the ON/OFF pin across R2 (Set), so that closing the switch will short R2 and the voltage at the ON/OFF pin will be typically one-half of VCC. When VCC is at the minimum operating voltage of 7.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com Figure 21. Driving Multiple MOSFETs Figure 22.
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LM9061 www.ti.com SNOS738F – APRIL 1995 – REVISED APRIL 1995 INCREASING MOSFET TURN ON TIME The ability of the LM9061 to quickly turn on the MOSFET is an important factor in the management of the MOSFET power dissipation. Caution should be exercised when attempting to increase the MOSFET Turn On time by limiting the Gate drive current. The MOSFET average dissipation, and the LM9061 Delay time, must be recalculated with the extended switching transition time.
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LM9061 SNOS738F – APRIL 1995 – REVISED APRIL 1995 www.ti.com REVISION HISTORY Changes from Revision E (April 2013) to Revision F • 20 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LM9061MX/NOPB Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.4 2.0 8.0 W Pin1 (mm) Quadrant 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM9061MX/NOPB SOIC D 8 2500 367.0 367.0 35.
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