Datasheet

LMC6001
www.ti.com
SNOS694H MARCH 1995REVISED MARCH 2013
LMC6001 Ultra Ultra-Low Input Current Amplifier
Check for Samples: LMC6001
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FEATURES
DESCRIPTION
Featuring 100% tested input currents of 25 fA max.,
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(Max Limit, 25°C Unless Otherwise Noted)
low operating power, and ESD protection of 2000V,
Input Current (100% Tested): 25 fA
the LMC6001 achieves a new industry benchmark for
Input Current Over Temp.: 2 pA
low input current operational amplifiers. By tightly
controlling the molding compound, Texas Instruments
Low Power: 750 μA
is able to offer this ultra-low input current in a lower
Low V
OS
: 350 μV
cost molded package.
Low Noise: 22 nV/Hz @1 kHz Typ.
To avoid long turn-on settling times common in other
low input current opamps, the LMC6001A is tested 3
APPLICATIONS
times in the first minute of operation. Even units that
Electrometer Amplifier
meet the 25 fA limit are rejected if they drift.
Photodiode Preamplifier
Because of the ultra-low input current noise of 0.13
Ion Detector
fA/Hz, the LMC6001 can provide almost noiseless
amplification of high resistance signal sources.
A.T.E. Leakage Testing
Adding only 1 dB at 100 kΩ, 0.1 dB at 1 MΩ and 0.01
dB or less from 10 MΩ to 2,000 MΩ, the LMC6001 is
an almost noiseless amplifier.
The LMC6001 is ideally suited for electrometer
applications requiring ultra-low input leakage such as
sensitive photodetection transimpedance amplifiers
and sensor amplifiers. Since input referred noise is
only 22 nV/Hz, the LMC6001 can achieve higher
signal to noise ratio than JFET input type
electrometer amplifiers. Other applications of the
LMC6001 include long interval integrators, ultra-high
input impedance instrumentation amplifiers, and
sensitive electrical-field measurement circuits.
Connection Diagrams
Figure 1. 8-Pin PDIP (Top View) Figure 2. 8-Pin TO-99 (Top View)
See P Package See LMC Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1995–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

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