Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SOIC 14 N

LMC660

www.ti.com

SNOSBZ3D –APRIL 1998–REVISED MARCH 2013

LMC660 CMOS Quad Operational Amplifier

Check for Samples: LMC660

FEATURES

DESCRIPTION

The LMC660 CMOS Quad operational amplifier is

• Rail-to-Rail Output Swing

ideal for operation from a single supply. It operates

• Specified for 2 kΩ and 600Ω Loads

from +5V to +15.5V and features rail-to-rail output

• High Voltage Gain: 126 dB

swing in addition to an input common-mode range

that includes ground. Performance limitations that

• Low Input Offset Voltage: 3 mV

have plagued CMOS amplifiers in the past are not a

• Low Offset Voltage Drift: 1.3 μV/°C

problem with this design. Input V

, drift, and

• Ultra Low Input Bias Current: 2 fA

broadband noise as well as voltage gain into realistic

loads (2 kΩ and 600Ω) are all equal to or better than

• Input Common-Mode Range Includes V

−

widely accepted bipolar equivalents.

• Operating Range from +5V to +15.5V Supply

This chip is built with TI's advanced Double-Poly

• I

= 375 μA/Amplifier; Independent of V

Silicon-Gate CMOS process.

• Low Distortion: 0.01% at 10 kHz

See the LMC662 datasheet for a dual CMOS

• Slew Rate: 1.1 V/μs

operational amplifier with these same features.

APPLICATIONS

• High-Impedance Buffer or Preamplifier

• Precision Current-to-Voltage Converter

• Long-Term Integrator

• Sample-and-Hold Circuit

• Peak Detector

• Medical Instrumentation

• Industrial Controls

• Automotive Sensors

Connection Diagrams

Figure 1. 14-Pin SOIC/PDIP Figure 2. LMC660 Circuit Topology (Each

Amplifier)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (22 pages)

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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 LMC660 CMOS Quad Operational Amplifier Check for Samples: LMC660 FEATURES DESCRIPTION • • • • • • • • • • • The LMC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15.5V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) Differential Input Voltage ±Supply Voltage Supply Voltage 16V Output Short Circuit to V+ See (2) Output Short Circuit to V− See (3) Lead Temperature (Soldering, 10 sec.
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 DC Electrical Characteristics Unless otherwise specified, all limits ensured for TJ = 25°C. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1MΩ unless otherwise specified. Parameter Test Conditions Input Offset Voltage Typ (1) LMC660AI Limit (1) 1 LMC660C Limit (1) Units 3 6 mV 3.3 6.3 max 1.3 μV/°C Input Bias Current 0.002 pA Input Offset Current 0.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com DC Electrical Characteristics (continued) Unless otherwise specified, all limits ensured for TJ = 25°C. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1MΩ unless otherwise specified.
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 Typical Performance Characteristics VS = ±7.5V, TA = 25°C unless otherwise specified. Supply Current vs. Supply Voltage Offset Voltage Figure 3. Figure 4. Input Bias Current Output Characteristics Current Sinking Figure 5. Figure 6. Output Characteristics Current Sourcing Input Voltage Noise vs. Frequency Figure 7. Figure 8.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) VS = ±7.5V, TA = 25°C unless otherwise specified. 6 CMRR vs. Frequency Open-Loop Frequency Response Figure 9. Figure 10. Frequency Response vs. Capacitive Load Non-Inverting Large Signal Pulse Response Figure 11. Figure 12. Stability vs. Capacitive Load Stability vs. Capacitive Load Figure 13. Figure 14.
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 APPLICATION INFORMATION AMPLIFIER TOPOLOGY The topology chosen for the LMC660, shown in Figure 15, is unconventional (compared to general-purpose op amps) in that the traditional unity-gain buffer output stage is not used; instead, the output is taken directly from the output of the integrator, to allow rail-to-rail output swing.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com (2) where: (3) is the amplifier's low-frequency noise gain and GBW is the amplifier's gain bandwidth product. An amplifier's lowfrequency noise gain is represented by the formula: (4) regardless of whether the amplifier is being used in inverting or non-inverting mode. Note that a feedback capacitor is more likely to be needed when the noise gain is low and/or the feedback resistor is large.
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 CAPACITIVE LOAD TOLERANCE Like many other op amps, the LMC660 may oscillate when its applied load appears capacitive. The threshold of oscillation varies both with load and circuit gain. The configuration most sensitive to oscillation is a unity-gain follower. See Typical Performance Characteristics. The load capacitance interacts with the op amp's output resistance to create an additional pole.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com Figure 19. Example, using the LMC660, of Guard Ring in P.C. Board Layout (a) Inverting Amplifier (b) Non-Inverting Amplifier (c) Follower (d) Howland Current Pump Figure 20.
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 The designer should be aware that when it is inappropriate to lay out a PC board for the sake of just a few circuits, there is another technique which is even better than a guard ring on a PC board: Don't insert the amplifier's input pin into the board at all, but bend it up in the air and use only air as an insulator. Air is an excellent insulator.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com TYPICAL SINGLE-SUPPLY APPLICATIONS (V+ = 5.0 VDC) Additional single-supply applications ideas can be found in the LM324 datasheet. The LMC660 is pin-for-pin compatible with the LM324 and offers greater bandwidth and input resistance over the LM324. These features will improve the performance of many existing single-supply applications. Note, however, that the supply voltage range of the LMC660 is smaller than that of the LM324. Figure 23.
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 TYPICAL SINGLE-SUPPLY APPLICATIONS (continued) + (V = 5.0 VDC) fosc = 1/2πRC, where R = R1 = R2 and C = C1 = C2. This circuit, as shown, oscillates at 2.0 kHz with a peak-to-peak output swing of 4.5V. Figure 26. 1 Hz Square-Wave Oscillator Figure 27. Power Amplifier Figure 28. 10 Hz Bandpass Filter fO = 10 Hz Q = 2.1 Gain = −8.8 Figure 29. 10 Hz High-Pass Filter fc = 10 Hz d = 0.
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LMC660 SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 www.ti.com TYPICAL SINGLE-SUPPLY APPLICATIONS (continued) + (V = 5.0 VDC) Figure 30. 1 Hz Low-Pass Filter (Maximally Flat, Dual Supply Only) fc = 1 Hz d = 1.414 Gain = 1.57 Figure 31. High Gain Amplifier with Offset Voltage Reduction Gain = −46.8 Output offset voltage reduced to the level of the input offset voltage of the bottom amplifier (typically 1 mV).
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LMC660 www.ti.com SNOSBZ3D – APRIL 1998 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision C (March 2013) to Revision D • Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 1-Nov-2013 (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LMC660AIMX SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1 LMC660AIMX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1 LMC660CMX SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMC660AIMX SOIC D 14 2500 367.0 367.0 35.0 LMC660AIMX/NOPB SOIC D 14 2500 367.0 367.0 35.0 LMC660CMX SOIC D 14 2500 367.0 367.0 35.0 LMC660CMX/NOPB SOIC D 14 2500 367.0 367.0 35.
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MECHANICAL DATA NFF0014A N0014A N14A (Rev G) www.ti.
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