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LME49710

www.ti.com

SNAS376C –NOVEMBER 2006–REVISED APRIL 2013

LME49710 High-Performance, High-Fidelity Audio Operational Amplifier

Check for Samples: LME49710

FEATURES

DESCRIPTION

The LME49710 is part of the ultra-low distortion, low-

• Easily Drives 600Ω Loads

noise, high-slew-rate operational amplifier series

• Optimized for Superior Audio Signal Fidelity

optimized and fully specified for high-performance,

• Output Short Circuit Protection

high-fidelity applications. Combining advanced

leading-edge process technology with state-of-the-art

• PSRR and CMRR Exceed 120dB (Typ)

circuit design, the LME49710 audio operational

• SOIC, PDIP, and TO-99 Packages

amplifiers deliver superior audio signal amplification

for outstanding audio performance. The LME49710

APPLICATIONS

combines extremely low-voltage noise density

(2.5nV/Hz) with vanishingly low THD+N (0.00003%)

• Ultra High-Quality Audio Amplification

to easily satisfy the most demanding audio

• High-Fidelity Preamplifiers

applications. To ensure that the most challenging

• High-Fidelity Multimedia

loads are driven without compromise, the LME49710

has a high slew rate of ±20V/μs and an output current

• State-of-the-Art Phono Pre Amps

capability of ±26mA. Further, dynamic range is

• High-Performance Professional Audio

maximized by an output stage that drives 2kΩ loads

• High-Fidelity Equalization and Crossover

to within 1V of either power supply voltage and to

Networks

within 1.4V when driving 600Ω loads.

• High-Performance Line Drivers

The LME49710's outstanding CMRR (120dB), PSRR

• High-Performance Line Receivers

(120dB), and V

(0.05mV) give the amplifier

excellent operational amplifier DC performance.

• High-Fidelity Active Filters

The LME49710 has a wide supply range of ±2.5V to

KEY SPECIFICATIONS

±17V. Over this supply range the LME49710’s input

circuitry maintains excellent common-mode and

• Power Supply Voltage Range: ±2.5V to ±17V

power supply rejection, as well as maintaining its low-

• THD+N (A

= 1, V

OUT

= 3V

RMS

, f

= 1kHz)

input bias current. The LME49710 is unity gain

– R

= 2kΩ: 0.00003% (typ)

stable. The Audio Operational Amplifier achieves

outstanding AC performance while driving complex

– R

= 600Ω: 0.00003% (typ)

loads with values as high as 100pF.

• Input Noise Density: 2.5nV/√Hz (typ)

The LME49710 is available in an 8-lead narrow body

• Slew Rate: ±20V/μs (typ)

SOIC, an 8-lead PDIP, and an 8-lead TO-99.

• Gain Bandwidth Product: 55MHz (typ)

Demonstration boards are available for each

• Open Loop Gain (R

= 600Ω): 140dB (typ)

package.

• Input Bias Current: 7nA (typ)

• Input Offset Voltage: 0.05mV (typ)

• DC Gain Linearity Error: 0.000009%

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (34 pages)

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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 LME49710 High-Performance, High-Fidelity Audio Operational Amplifier Check for Samples: LME49710 FEATURES DESCRIPTION • • • • • The LME49710 is part of the ultra-low distortion, lownoise, high-slew-rate operational amplifier series optimized and fully specified for high-performance, high-fidelity applications.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL APPLICATION 150: 3320: 150: 3320: 26.1 k: + 909: - - LME49710 + INPUT LME49710 + 3.83 k: + 100: 22 nF//4.7 nF//500 pF 10 pF 47 k: OUTPUT 47 nF//33 nF Note: 1% metal film resistors, 5% polypropylene capacitors Figure 1. Passively Equalized RIAA Phono Preamplifier CONNECTION DIAGRAMS Figure 2.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 36V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS(1)(2) (continued) The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified. Symbol Parameter Conditions LME49710 Typical ±0.05 (3) Limit (4) (5) Units (Limits) ±0.7 mV (max) VOS Offset Voltage ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature 40°C ≤ TA ≤ 85°C 0.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS THD+N vs Output Voltage VCC = 12V, VEE = –12V, RL = 2kΩ 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 THD+N (%) THD+N (%) THD+N vs Output Voltage VCC = 15V, VEE = –15V, RL = 2kΩ 0.0005 0.0002 0.0005 0.0002 0.0001 0.0001 0.00005 0.00005 0.00002 0.00002 0.00001 10m 100m 1 0.00001 10m 10 20 100m Figure 5.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) THD+N vs Output Voltage VCC = 2.5V, VEE = –2.5V, RL = 600Ω 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 THD+N (%) THD+N (%) THD+N vs Output Voltage VCC = 17V, VEE = –17V, RL = 600Ω 0.0005 0.0002 0.0005 0.0002 0.0001 0.0001 0.00005 0.00005 0.00002 0.00002 0.00001 10m 0.00001 10m 100m 1 10 20 100m Figure 11.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) THD+N vs Frequency VCC = 17V, VEE = –17V, RL = 2kΩ, VOUT = 3VRMS 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 THD+N (%) THD+N (%) THD+N vs Frequency VCC = 15V, VEE = –15V, RL = 2kΩ, VOUT = 3VRMS 0.0005 0.0002 0.0005 0.0002 0.0001 0.0001 0.00005 0.00005 0.00002 0.00002 0.00001 20 0.00001 20 50 100 200 500 1k 2k 5k 10k 20k Figure 16. Figure 17.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) IMD vs Output Voltage VCC = 12V, VEE = –12V, RL = 2kΩ 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 IMD (%) IMD (%) IMD vs Output Voltage VCC = 15V, VEE = –15V, RL = 2kΩ 0.0005 0.0002 0.0005 0.0002 0.0001 0.0001 0.00005 0.00005 0.00002 0.00002 0.00001 100m 500m 1 5 10 0.00001 100m 20 500m Figure 23.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) IMD vs Output Voltage VCC = 2.5V, VEE = –2.5V, RL = 600Ω 0.01 0.01 0.005 0.005 0.002 0.002 0.001 0.001 0.0005 0.0005 IMD (%) IMD (%) IMD vs Output Voltage VCC = 17V, VEE = –17V, RL = 600Ω 0.0002 0.0002 0.0001 0.0001 0.00005 0.00005 0.00002 0.00002 0.00001 100m 500m 1 5 10 20 0.00001 100m 500m 2 Figure 28. Figure 29.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Voltage Noise Density vs Frequency Current Noise Density vs Frequency 100 VS = 30V VCM = 15V 10 2.45 nV/ Hz CURRENT NOISE (pA/ Hz) VOLTAGE NOISE (nV/ Hz) 100 VS = 30V VCM = 15V 10 1.5 pA/ Hz 1 1 1 10 100 1k 10k 100k 1 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 34. Figure 35. PSRR+ vs Frequency VCC = 2.5V, VEE = –2.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 40 -50 50 -60 60 -70 70 PSRR (dB) -40 -80 -90 -100 90 100 110 -120 120 -130 130 100 1k 140 20 10k 20k Figure 41.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 40 -50 50 -60 60 -70 70 -80 -90 -100 80 90 100 -110 110 -120 120 -130 130 100 1k 140 20 10k 20k Figure 47.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) -40 -50 -50 -60 -60 -70 -70 PSRR (dB) PSRR (dB) -40 PSRR+ vs Frequency VCC = 2.5V, VEE = –2.5V, RL = 10kΩ, VRIPPLE = 200mVpp -80 -90 -100 -80 -90 -100 -110 -110 -120 -120 -130 -130 -140 20 100 1k -140 20 10k 20k PSRR- vs Frequency VCC = 2.5V, VEE = –2.5V, RL = 10kΩ, VRIPPLE = 200mVpp 100 PSRR (dB) Figure 53.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) PSRR- vs Frequency VCC = 17V, VEE = –17V, RL = 10kΩ, VRIPPLE = 200mVpp -40 40 -50 50 -60 60 -70 70 PSRR (dB) PSRR (dB) PSRR+ vs Frequency VCC = 17V, VEE = –17V, RL = 10kΩ, VRIPPLE = 200mVpp -80 -90 -100 80 90 100 -110 110 -120 120 -130 130 -140 20 100 140 20 10k 20k 1k 100 CMRR (dB) Figure 59.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) CMRR vs Frequency VCC = 12V, VEE = –12V, RL = 600Ω 0 0 -50 -50 CMRR (dB) CMRR (dB) CMRR vs Frequency VCC = 15V, VEE = –15V, RL = 600Ω -100 -150 10 100 1k 10k -100 -150 10 100k 100 Figure 65. CMRR vs Frequency VCC = 17V, VEE = –17V, RL = 600Ω CMRR vs Frequency VCC = 2.5V, VEE = –2.5V, RL = 600Ω 0 -50 -50 -100 100 1k 10k -150 10 100k 100 10k Figure 67.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 0 0 -50 -50 -100 -100 -150 10 100 1k 10k -150 10 100k 100 100k Figure 70. Figure 71. Output Voltage vs Supply Voltage RL = 2kΩ, THD+N = 1% Output Voltage vs Supply Voltage RL = 600Ω, THD+N = 1% 12 12 10 10 8 6 4 8 6 4 2 0 2.5 4.5 6.5 0 2.5 8.5 10.5 12.5 14.5 16.5 18.5 4.5 SUPPLY VOLTAGE (V) 6.5 8.5 10.5 12.5 14.5 16.5 18.5 SUPPLY VOLTAGE (V) Figure 72.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Output Voltage vs Load Resistance VCC = 2.5V, VEE = –2.5V, THD+N = 1% 15 1.25 14 1.00 OUTPUT (VRMS) OUTPUT (VRMS) Output Voltage vs Load Resistance VCC = 17V, VEE = –17V, THD+N = 1% 13 12 11 10 400 0.75 0.5 0.25 600 800 1k 2k 0.00 400 10k LOAD RESISTANCE (: 600 800 1k 2k 10k LOAD RESISTANCE (: Figure 77.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com NOISE MEASUREMENT CIRCUIT A. Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise. Figure 80. Total Gain: 115 dB at f = 1 kHz Input Referred Noise Voltage: en = V O/560,000 (V) RIAA Preamp Voltage Gain RIAA Deviation vs Frequency VIN = 10mV, AV = 35.0dB, f = 1kHz Figure 81. 18 Flat Amp Voltage Gain vs Frequency VO = 0dB, AV = 80.0dB, f = 1kHz Figure 82.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 APPLICATION HINTS The LME49710 is a high-speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable. Capacitive loads greater than 100pF must be isolated from the output. The most straight forward way to do this is to put a resistor in series with the output.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com VO = V1–V2 Figure 85. Balanced to Single Ended Converter VO = V1 + V2 − V3 − V4 Figure 86. Adder/Subtracter Figure 87.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 Illustration is f0 = 1 kHz Figure 88. Second-Order High-Pass Filter (Butterworth) Illustration is f0 = 1 kHz Figure 89.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com Figure 90. State Variable Filter Figure 91.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 Figure 92. Tone Control Av = 35 dB En = 0.33 μV S/N = 90 dB f = 1 kHz A Weighted A Weighted, VIN = 10 mV @f = 1 kHz Figure 93.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com Illustration is: V0 = 101(V2 − V1) Figure 94.
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LME49710 www.ti.com SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 APPLICATION INFORMATION DISTORTION MEASUREMENTS The vanishingly low-residual distortion produced by LME49710 is below the capabilities of all commercially available equipment. This makes distortion measurements just slightly more difficult than simply connecting a distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional resistor.
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LME49710 SNAS376C – NOVEMBER 2006 – REVISED APRIL 2013 www.ti.com REVISION HISTORY 26 Rev Date 1.0 11/16/07 Initial release. 1.1 12/12/06 Added the Typical Performance curves. 1.2 01/15/07 Added more curves and input some text edits. 1.3 03/09/07 Fixed graphics 20210489 and 90. C 04/04/13 Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 16-Aug-2013 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LME49710MAX/NOPB Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.4 2.0 8.0 W Pin1 (mm) Quadrant 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LME49710MAX/NOPB SOIC D 8 2500 349.0 337.0 45.
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