Datasheet

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LME49723

www.ti.com

SNAS429B –JANUARY 2008–REVISED APRIL 2013

LME49723 Dual High Fidelity Audio Operational Amplifier

Check for Samples: LME49723

FEATURES

DESCRIPTION

The LME49723 is part of the ultra-low distortion, low

• Easily Drives 600Ω Loads

noise, high slew rate operational amplifier series

• Optimized for Superior Audio Signal Fidelity

optimized and fully specified for high performance,

• Output Short Circuit Protection

high fidelity applications. Combining advanced

leading-edge process technology with state-of-the-art

• PSRR and CMRR Exceed 100dB (typ)

circuit design, the LME49723 audio operational

• SOIC Package

amplifiers deliver superior audio signal amplification

for outstanding audio performance. The LME49723

APPLICATIONS

combines extremely low voltage noise density

(3.6nV/√Hz) with vanishingly low THD+N (0.0002%)

• High Quality Audio Amplification

to easily satisfy the most demanding audio

• High Fidelity Preamplifiers

applications. To ensure that the most challenging

• High Fidelity Multimedia

loads are driven without compromise, the LME49723

has a high slew rate of ±20V/μs and an output current

• Phono Pre Amps

capability of ±26mA. Further, dynamic range is

• High Performance Professional Audio

maximized by an output stage that drives 2kΩ loads

• High Fidelity Equalization and Crossover

to within 1V of either power supply voltage and to

Networks

within 1.4V when driving 600Ω loads.

• High Performance Line Drivers

The LME49723's outstanding CMRR (100dB), PSRR

• High Performance Line Receivers

(100dB), and V

(0.3mV) give the amplifier excellent

operational amplifier DC performance.

• High Fidelity Active Filters

The LME49723 has a wide supply range of ±2.5V to

KEY SPECIFICATIONS

±17V. Over this supply range the LME49723’s input

circuitry maintains excellent common-mode and

• Power Supply Voltage Range: ±2.5 to ±17 V

power supply rejection, as well as maintaining its low

• THD+N (A

= 1, V

OUT

= 3V

RMS

, f

= 1kHz)

input bias current. The LME49723 is unity gain

– R

= 2kΩ: 0.0002 % (typ)

stable.

– R

= 600Ω: 0.0002 % (typ)

The LME49723 is available in an 8–lead narrow body

• Input Noise Density: 3.6 nV/√Hz (typ)

SOIC package. Demonstration boards are available

for each package.

• Slew Rate: ±8 V/μs (typ)

• Gain Bandwidth Product: 17 MHz (typ)

• Open Loop Gain (R

= 600Ω): 105 dB (typ)

• Input Bias Current: 200 nA (typ)

• Input Offset Voltage: 0.3 mV (typ)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (26 pages)

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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 LME49723 Dual High Fidelity Audio Operational Amplifier Check for Samples: LME49723 FEATURES DESCRIPTION • • • • • The LME49723 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com TYPICAL APPLICATION 150: 3320: 150: 26.1 k: + 909: - INPUT 3320: - LME49723 LME49723 + + 3.83 k: + 100: 22 nF//4.7 nF//500 pF 10 pF 47 k: OUTPUT 47 nF//33 nF Note: 1% metal film resistors, 5% polypropylene capacitors Figure 1.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V+ - V-) 36V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Susceptibility (5) 800V ESD Susceptibility (6) 180V Junction Temperature 150°C Thermal Resistance θJA (SO) 145°C/W Temperature Range TMIN ≤ TA ≤ TMAX –40°C ≤ TA ≤ 85°C Supply Voltage Range ±2.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS FOR THE LME49723(1)(2) (continued) The specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, TA = 25°C, unless otherwise specified.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS 0.1 THD+N vs Output Voltage VS = ±5V, RL = 2kΩ 0.1 THD+N vs Output Voltage VS = ±5V, RL = 10kΩ 0.01 THD+N (%) THD+N (%) 0.01 0.001 0.001 0.0001 10m 100m 1 2 0.0001 10m 3 OUTPUT VOLTAGE (V) 0.1 100m 1 3 OUTPUT VOLTAGE (V) Figure 3. Figure 4. THD+N vs Output Voltage VS = ±5V, RL = 600Ω THD+N vs Output Voltage VS = ±15V, RL = 2kΩ 0.1 0.01 THD+N (%) THD+N (%) 0.01 0.001 0.001 0.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) THD+N vs Frequency VS = ±15V, VOUT = 3VRMS, RL = 2kΩ 0.1 0.1 0.001 THD+N (%) THD+N (%) 0.001 0.0001 THD+N vs Frequency VS = ±15V, VOUT = 3VRMS, RL = 10kΩ 0.0001 0.00001 20 200 2k 20k 0.00001 20 200 FREQUENCY (Hz) 0.1 FREQUENCY (Hz) Figure 10.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) +0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 10 PSRR+ vs Frequency VS = ±15V, RL = 10kΩ, VRIPPLE = 200mVPP PSRR (dB) PSRR (dB) PSRR+ vs Frequency VS = ±15V, RL = 2kΩ, VRIPPLE = 200mVPP 100 1k 10k 100k 10k FREQUENCY (Hz) Figure 16.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 100 1k 10k 100k 100 1k 10k 100k FREQUENCY (Hz) Figure 21. Figure 22.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Crosstalk vs Frequency VS = ±15V, VOUT = 3VRMS, RL = 2kΩ, Crosstalk vs Frequency VS = ±15V, VOUT = 3VRMS, RL = 10kΩ, +0 0.01 -10 0.005 -20 0.002 -40 0.001 -50 0.0005 % CROSSTALK (dB) -30 -60 0.0002 -70 -80 0.0001 -90 0.00005 -100 0.00002 -110 -120 20 200 2k 20k 0.00001 20 50 100 200 500 1k 2k 5k 10k 20k Hz FREQUENCY (Hz) Figure 27. Figure 28.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) 3.0 10.0 2.8 9.8 OUTPUT VOLTAGE OUTPUT VOLTAGE Output Voltage vs Load Resistance VS = ±5V, THD+N = 1% 2.6 2.4 Output Voltage vs Load Resistance VDD = 15V, VSS = –15V, THD+N = 0.1% 9.6 9.4 9.2 2.2 2.0 500 600 800 2k 5k 9.0 500 10k 600 Output Voltage vs Supply Voltage RL = 2kΩ, THD+N = 0.1% Output Voltage vs Supply Voltage RL = 10kΩ, THD+N = 0.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS (continued) 7 Supply Current vs Supply Voltage RL = 10kΩ 6 SUPPLY CURRENT(mA) SUPPLY CURRENT(mA) 6 5 4 3 2 1 0 2.5 Supply Current vs Supply Voltage RL = 600Ω 7 5 4 3 2 1 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 0 2.5 4.5 6.5 8.5 10.5 12.5 14.5 16.5 18.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 39. Figure 40. Noninverting Amp Noninverting Amp Figure 41. Figure 42.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Power Bandwidth Equivalent Input Noise vs Frequency EQUIVALENT INPUT NOISE VOLTAGE (nV/ Hz) 10 5 2 1 10 100 1k 10k 100k FREQUENCY (Hz) Figure 45. 12 Figure 46.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 APPLICATION INFORMATION DISTORTION MEASUREMENTS The vanishingly low residual distortion produced by LME49723 is below the capabilities of all commercially available equipment. This makes distortion measurements just slightly more difficult than simply connecting a distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional resistor.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise. Figure 48. Noise Measurement Circuit Total Gain: 115 dB @f = 1 kHz Input Referred Noise Voltage: en = V0/560,000 (V) Figure 49. RIAA Preamp Voltage Gain, RIAA Deviation vs Frequency Figure 50. Flat Amp Voltage Gain vs Frequency TYPICAL APPLICATIONS VO = V1–V2 Figure 51.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 VO = V1 + V2 − V3 − V4 Figure 52. Adder/Subtracter Figure 53. Sine Wave Oscillator Illustration is f0 = 1 kHz Figure 54.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com Illustration is f0 = 1 kHz Figure 55. Second Order Low Pass Filter (Butterworth) Illustration is f0 = 1 kHz, Q = 10, ABP = 1 Figure 56. State Variable Filter Figure 57.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 Figure 58. 2 Channel Panning Circuit (Pan Pot) Figure 59. Line Driver Illustration is: fL = 32 Hz, fLB = 320 Hz fH =11 kHz, fHB = 1.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com Figure 60. Tone Control Av = 35 dB En = 0.33 μV S/N = 90 dB f = 1 kHz A Weighted A Weighted, VIN = 10 mV @f = 1 kHz Figure 61. RIAA Preamp Illustration is: V0 = 101(V2 − V1) Figure 62.
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LME49723 www.ti.com SNAS429B – JANUARY 2008 – REVISED APRIL 2013 Figure 63. Band Graphic Equalizer fo (Hz) C1 C2 R1 R2 32 0.12μF 4.7μF 75kΩ 500Ω 64 0.056μF 3.3μF 68kΩ 510Ω 125 0.033μF 1.5μF 62kΩ 510Ω 250 0.015μF 0.82μF 68kΩ 470Ω 500 8200pF 0.39μF 62kΩ 470Ω 1k 3900pF 0.22μF 68kΩ 470Ω 2k 2000pF 0.1μF 68kΩ 470Ω 4k 1100pF 0.056μF 62kΩ 470Ω 8k 510pF 0.022μF 68kΩ 510Ω 16k 330pF 0.
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LME49723 SNAS429B – JANUARY 2008 – REVISED APRIL 2013 www.ti.com REVISION HISTORY 20 Rev Date 1.0 01/07/08 Description Initial release. 1.01 02/11/08 Text edits. B 04/04/13 Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 18-Oct-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device LME49723MAX/NOPB Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.4 2.0 8.0 W Pin1 (mm) Quadrant 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LME49723MAX/NOPB SOIC D 8 2500 349.0 337.0 45.
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