Datasheet

LMP91002
SNIS163A –APRIL 2012–REVISED MARCH 2013 www.ti.com
Electrical Characteristics
(1)
Unless otherwise specified, all limits ensured for T
A
= 25°C, V
S
= (V
DD
– AGND), V
S
= 3.3V and AGND = DGND = 0V, V
REF
=
2.5V, Internal Zero = 20% V
REF
. Boldface limits apply at the temperature extremes.
Symbol Parameter Conditions Min
(2)
Typ
(3)
Max
(2)
Units
Power Supply Specification
3-lead amperometric cell mode 15
10
MODECN = 0x03 13.5
Standby mode 10
I
S
Supply Current 6.5 µA
MODECN = 0x02 8
Deep Sleep mode 1
0.6
MODECN = 0x00 0.85
Potentiostat
VDD=2.7V; -90 90
Internal Zero 50% VDD -800 800
I
RE
Input bias current at RE pin pA
VDD=3.6V; -90 90
Internal Zero 50% VDD -900 900
Minimum operating current sink 750
µA
capability
source 750
I
CE
sink 10
Minimum charging capability
(4)
mA
source 10
Open loop voltage gain of control 300mV≤VCE≤Vs-300mV, -750µA≤ICE≤750µA
AOL_A1 104 120 dB
loop op amp (A1)
Low Frequency integrated noise
en_RW 0.1Hz to 10Hz
(5)
3.4 µVpp
between RE pin and WE pin
0% VREF, Internal Zero=20% VREF
V
OS_RW
WE Voltage Offset referred to RE 0% VREF, Internal Zero=50% VREF -550 550 µV
0% VREF, Internal Zero=67% VREF
0% VREF, Internal Zero=20% VREF
WE Voltage Offset Drift referred
TcV
OS_RW
0% VREF, Internal Zero=50% VREF -4 4 µV/°C
to RE from -40°C to 85°C
(6)
0% VREF, Internal Zero=67% VREF
Transimpedance gain accuracy 5 %
Linearity ±0.05 %
2.75
3.5
7
TIA_GAIN
7 programmable gain resistors 14
Programmable TIA Gains kΩ
35
120
350
Maximum external gain resistor 350
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T
J
= T
A
. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self-heating where T
J
> T
A
. Absolute Maximum Ratings indicate junction temperature limits beyond
which the device may be permanently degraded, either mechanically or electrically.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using
statistical quality control (SQC) method.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4) At such currents no accuracy of the output voltage can be expected.
(5) This parameter includes both A1 and TIA's noise contribution.
(6) Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature
change.Starting from the measured voltage offset at temperature T1 (V
OS_RW
(T1)), the voltage offset at temperature T2 (V
OS_RW
(T2)) is
calculated according the following formula: V
OS_RW
(T2)=V
OS_RW
(T1)+ABS(T2–T1)* TcV
OS_RW
.
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