Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SC 70 5

SENSOR

ADC

PRESSURE

EMI HARDENED

INTERFERING

RF SOURCES

NO RF RELATED

DISTURBANCES

LMV831, LMV832, LMV834

www.ti.com

SNOSAZ6B –AUGUST 2008–REVISED MARCH 2013

LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened

Operational Amplifiers

Check for Samples: LMV831, LMV832, LMV834

FEATURES

DESCRIPTION

TI’s LMV831, LMV832, and LMV834 are CMOS input,

• Unless Otherwise Noted, Typical Values at T

low power op amp IC's, providing a low input bias

25°C, V

= 3.3V

current, a wide temperature range of −40°C to 125°C

• Supply Voltage 2.7V to 5.5V

and exceptional performance making them robust

• Supply Current (per Channel) 240 µA

general purpose parts. Additionally, the

LMV831/LMV832/LMV834 are EMI hardened to

• Input Offset Voltage 1 mV Max

minimize any interference so they are ideal for EMI

• Input Bias Current 0.1 pA

sensitive applications.

• GBW 3.3 MHz

The unity gain stable LMV831/LMV832/LMV834

• EMIRR at 1.8 GHz 120 dB

feature 3.3 MHz of bandwidth while consuming only

• Input Noise Voltage at 1 kHz 12 nV/√Hz

0.24 mA of current per channel. These parts also

maintain stability for capacitive loads as large as 200

• Slew Rate 2 V/µs

pF. The LMV831/LMV832/LMV834 provide superior

• Output Voltage Swing Rail-to-Rail

performance and economy in terms of power and

• Output Current Drive 30 mA

space usage.

• Operating Ambient Temperature Range −40°C

This family of parts has a maximum input offset

to 125°C

voltage of 1 mV, a rail-to-rail output stage and an

input common-mode voltage range that includes

APPLICATIONS

ground. Over an operating range from 2.7V to 5.5V

the LMV831/LMV832/LMV834 provide a PSRR of 93

• Photodiode Preamp

dB, and a CMRR of 91 dB. The LMV831 is offered in

• Piezoelectric Sensors

the space saving 5-Pin SC70 package, the LMV832

in the 8-Pin VSSOP and the LMV834 is offered in the

• Portable/Battery-Powered Electronic

14-Pin TSSOP package.

Equipment

• Filters/Buffers

• PDAs/Phone Accessories

Typical Application

Figure 1. EMI Hardened Sensor Application

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (27 pages)

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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Check for Samples: LMV831, LMV832, LMV834 FEATURES DESCRIPTION • TI’s LMV831, LMV832, and LMV834 are CMOS input, low power op amp IC's, providing a low input bias current, a wide temperature range of −40°C to 125°C and exceptional performance making them robust general purpose parts.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 3.3V Electrical Characteristics(1) (continued) Unless otherwise specified, all limits are specified for at TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL =10 kΩ to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (2) Typ Max Units 0.1 10 500 pA (3) IB Input Bias Current (5) IOS Input Offset Current CMRR Common-Mode Rejection Ratio (4) 0.2V ≤ VCM ≤ V+ - 1.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com 3.3V Electrical Characteristics(1) (continued) Unless otherwise specified, all limits are specified for at TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL =10 kΩ to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (2) Typ (3) Max (2) Units GBW Gain Bandwidth Product 3.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 5V Electrical Characteristics(1) (continued) Unless otherwise specified, all limits are specified for at TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2. Boldface limits apply at the temperature extremes.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com Connection Diagram Figure 2. 5-Pin SC70 Top View 6 Submit Documentation Feedback Figure 3. 8-Pin VSSOP Top View Figure 4.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 Typical Performance Characteristics At TA = 25°C, RL = 10 kΩ, V+ = 3.3V, V− = 0V, Unless otherwise specified. VOS vs. VCM at V+ = 3.3V VOS vs. VCM at V+ = 5.0V 125°C 85°C 0.3 0.2 0.1 VOS (mV) VOS (mV) 0.2 125°C 85°C 0.3 25°C 0 -0.1 -40°C -0.2 0.1 25°C 0 -0.1 -40°C -0.2 -0.3 -0.3 + + V = 5.0V V = 3.3V -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -0.5 0.5 1.5 2.5 3.5 4.5 VCM (V) VCM (V) Figure 5.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, V = 3.3V, V− = 0V, Unless otherwise specified. + Input Bias Current vs. VCM at 85°C 50 TA = 85°C 40 30 300 20 200 10 5.0V 0 -10 3.3V -20 0 -300 -40 -400 0 1 5.0V -100 -200 2 3 4 5 3.3V -500 -1 6 0 1 2 3 4 5 6 VCM (V) VCM (V) Figure 11. Figure 12. Supply Current vs. Supply Voltage Single LMV831 Supply Current vs.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, V = 3.3V, V− = 0V, Unless otherwise specified. + Supply Current vs. Temperature Dual LMV832 Supply Current vs. Temperature Quad LMV834 1.4 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 0.7 0.6 5.0V 0.5 0.4 3.3V -50 -25 1.0 3.3V 0.8 0.6 0 25 50 75 100 125 -25 0 25 50 75 100 125 TEMPERATURE (°C) Figure 17. Figure 18. Sinking Current vs.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, V = 3.3V, V− = 0V, Unless otherwise specified. + Output Swing Low vs. Supply Voltage RL = 2 kΩ RL = 2k RL = 10k 125°C VOUT FROM RAIL LOW (mV) VOUT FROM RAIL LOW (mV) 60 Output Swing Low vs. Supply Voltage RL = 10 kΩ 50 85°C 40 30 25°C 20 10 12 125°C 85°C 10 8 6 4 25°C 2 -40°C 0 -40°C 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.5 4.5 5.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, V = 3.3V, V− = 0V, Unless otherwise specified. + Phase Margin vs. Capacitive Load PSRR vs. Frequency 120 100 70 60 PSRR (dB) PHASE(°) 3.3V 80 50 5.0V 40 30 20 5.0V -PSRR 60 3.3V 5.0V 40 10 3.3V 0 20 1 10 100 +PSRR 0 100 1000 1k 10k CLOAD (pF) 100k 1M 10M FREQUENCY (Hz) Figure 29. Figure 30. CMRR vs.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, V = 3.3V, V− = 0V, Unless otherwise specified. + 20 mV/DIV Small Signal Step Response with Gain = 10 20 mV/DIV Small Signal Step Response with Gain = 1 f = 100 kHz f = 100 kHz AV = +1 VIN = 100 mVPP AV = +10 VIN = 10 mVPP 1 µs/DIV 1 µs/DIV Figure 35. Figure 36. Slew Rate vs. Supply Voltage Input Voltage Noise vs. Frequency 100 FALLING EDGE 1.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, V = 3.3V, V− = 0V, Unless otherwise specified. + ROUT vs. Frequency 1k EMIRR IN+ vs. Power at 400 MHz AV = 100x EMIRRV_PEAK (dB) ROUT (:) 100 10 1 AV = 10x 0.1 140 130 120 110 100 90 80 70 60 50 40 30 20 125°C 85°C 25°C -40°C AV = 1x 0.01 fRF = 400 MHz 100 1k 10k 100k 1M 10M -40 -10 0 10 Figure 42. EMIRR IN+ vs.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com APPLICATION INFORMATION INTRODUCTION The LMV831, LMV832 and LMV834 are operational amplifiers with excellent specifications, such as low offset, low noise and a rail-to-rail output. These specifications make the LMV831, LMV832 and LMV834 great choices for medical and instrumentation applications such as diagnosis equipment. The low supply current is perfectly suited for battery powered equipment.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 One artifact from this test circuit is that the low frequency CMRR results appear higher than expected. This is because in the AC CMRR test circuit the potentiometer is used to compensate for the DC mismatches. So, mainly AC mismatch is all that remains. Therefore, the obtained DC CMRR from this AC CMRR test circuit tends to be higher than the actual DC CMRR based on DC measurements.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com EMIRR With the increase of RF transmitting devices in the world, the electromagnetic interference (EMI) between those devices and other equipment becomes a bigger challenge. The LMV831, LMV832 and LMV834 are EMI hardened op amps which are specifically designed to overcome electromagnetic interference. Along with EMI hardened op amps, the EMIRR parameter is introduced to unambiguously specify the EMI performance of an op amp.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 signal level at the pin. The circuit diagram is shown in Figure 51. The PCB trace from RFIN to the IN+ pin should be a 50Ω stripline in order to match the RF impedance of the cabling and the RF generator. On the PCB a 50Ω termination is used. This 50Ω resistor is also used to set the bias level of the IN+ pin to ground level.
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LMV831, LMV832, LMV834 SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 www.ti.com The difference between the two types of dual op amps is clearly visible. The typical standard dual op amp has an output shift (disturbed signal) larger than 1V as a result of the RF signal transmitted by the cell phone. The LMV832, EMI hardened op amp does not show any significant disturbances. This means that the RF signal will not disturb the signal entering the ADC when using the LMV832. R1 2.
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LMV831, LMV832, LMV834 www.ti.com SNOSAZ6B – AUGUST 2008 – REVISED MARCH 2013 REVISION HISTORY Changes from Revision A (March 2013) to Revision B • Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.
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PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing LMV831MG/NOPB SC70 DCK 5 LMV831MGE/NOPB SC70 DCK LMV831MGX/NOPB SC70 DCK LMV832MM/NOPB VSSOP LMV832MME/NOPB SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 5 250 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 5 3000 178.0 8.4 2.25 2.45 1.
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PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMV831MG/NOPB SC70 DCK 5 1000 210.0 185.0 35.0 LMV831MGE/NOPB SC70 DCK 5 250 210.0 185.0 35.0 LMV831MGX/NOPB SC70 DCK 5 3000 210.0 185.0 35.0 LMV832MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LMV832MME/NOPB VSSOP DGK 8 250 210.0 185.0 35.0 LMV832MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.
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