Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SC 70 5

ADC

PRESSURE

SENSOR

EMI HARDENED

INTERFERING

RF SOURCES

NO RF RELATED

DISTURBANCES

LMV851, LMV852, LMV854

www.ti.com

SNOSAW1A –OCTOBER 2007–REVISED MARCH 2013

LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers

Check for Samples: LMV851, LMV852, LMV854

FEATURES

DESCRIPTION

Texas Instrument’s LMV851/LMV852/LMV854 are

• Unless Otherwise Noted, Typical Values

CMOS input, low power op amp ICs, providing a low

at T

= 25°C, V

SUPPLY

= 3.3V

input bias current, a wide temperature range of

• Supply Voltage 2.7V to 5.5V

−40°C to +125°C and exceptional performance,

• Supply Current (Per Channel) 0.4 mA

making them robust general purpose parts.

Additionally, the LMV851/LMV852/LMV854 are EMI

• Input Offset Voltage 1 mV max

hardened to minimize any interference so they are

• Input Bias Current 0.1 pA

ideal for EMI sensitive applications. The unity gain

• GBW 8 MHz

stable LMV851/LMV852/LMV854 feature 8 MHz of

bandwidth while consuming only 0.4 mA of current

• EMIRR at 1.8 GHz 87 dB

per channel. These parts also maintain stability for

• Input Noise Voltage at 1 kHz 11 nV/√Hz

capacitive loads as large as 200 pF. The

• Slew Rate 4.5 V/µs

LMV851/LMV852/LMV854 provide superior

performance and economy in terms of power and

• Output Voltage Swing Rail-to-Rail

space usage. This family of parts has a maximum

• Output Current Drive 30 mA

input offset voltage of 1 mV, a rail-to-rail output stage

• Operating Ambient Temperature Range −40°C

and an input common-mode voltage range that

to 125°C

includes ground. Over an operating supply range

from 2.7V to 5.5V the LMV851/LMV852/LMV854

provide a CMRR of 92 dB, and a PSRR of 93 dB.

APPLICATIONS

The LMV851/LMV852/LMV854 are offered in the

• Photodiode Preamp

space saving 5-Pin SC70 package, the 8-Pin VSSOP

• Piezoelectric Sensors

and the 14-Pin TSSOP package.

• Portable/Battery-Powered Electronic

Equipment

• Filters/Buffers

• PDAs/Phone Accessories

• Medical Diagnosis Equipment

Typical Application

Figure 1. Sensor Amplifiers Close to RF Sources

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (30 pages)

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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Check for Samples: LMV851, LMV852, LMV854 FEATURES DESCRIPTION • Texas Instrument’s LMV851/LMV852/LMV854 are CMOS input, low power op amp ICs, providing a low input bias current, a wide temperature range of −40°C to +125°C and exceptional performance, making them robust general purpose parts.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 3.3V Electrical Characteristics (1) (continued) Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2. Boldface limits apply at the temperature extremes. Parameter IOS Test Conditions Min (2) Input Offset Current CMRR + −0.2V < VCM < V - 1.2V Common Mode Rejection Ratio + 2.7V ≤ V ≤ 5.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 5V Electrical Characteristics www.ti.com (1) Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2. Boldface limits apply at the temperature extremes. Parameter Test Conditions Min (2) Typ (3) Max (2) Input Offset Voltage TCVOS Input Offset Voltage Drift IB Input Bias Current IOS Input Offset Current 1 pA CMRR Common Mode Rejection Ratio −0.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 5V Electrical Characteristics (1) (continued) Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2. Boldface limits apply at the temperature extremes. Parameter Test Conditions (8) SR Slew Rate GBW Φm en Input-Referred Voltage Noise Min AV = +1, VOUT = 2 VPP, 10% to 90% (2) Typ (3) Max (2) Units 4.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. VOS vs. VCM at 3.3V 0.3 0.3 0.2 0.3 0.2 125°C 85°C 0.2 0.1 0.1 0.1 0.1 VOS mV) VOS (mV) 0.3 125°C 85°C 0.2 VOS vs. VCM at 5.0V 0 0 25°C -40°C -0.1 -0.1 -0.2 0 0 25°C -0.1 -40°C -0.1 -0.2 -0.3 -0.2 -0.2 -0.3 VS = 5.0V VS = 3.3V -0.3 -0.3 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -0.5 0.5 1.5 Figure 6.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. Input Bias Current vs. VCM at 85°C 500 50 TA = 85°C 30 50 40 20 30 20 10 10 00 -10 -20 -10 -30 -40 -20 -50 -30 5.0V 3.3V 300 500 400 200 300 200 100 100 00 -100 -200 -100 -300 -400 -200 -500 -300 5.0V 3.3V -400 -40 -500 -50 -1 0 1 2 3 4 5 -1 6 0 2 3 4 5 VCM (V) Figure 11. Figure 12.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. Supply Current vs. Temperature Dual LMV852 Supply Current vs. Temperature Quad LMV854 1.2 2.2 1.2 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) 2.2 2.0 1.0 1.0 5.0V 0.8 0.8 3.3V 0.6 0.6 0.4 5.0V 1.6 1.6 1.4 1.4 1.2 3.3V 1.0 1.2 0.8 1.0 0.8 0.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. Output Swing Low vs. Supply Voltage RL = 2 kΩ Output Swing Low vs. Supply Voltage RL = 10 kΩ 12 45 RL = 2 k: RL = 10 k: 125°C VOUT FROM RAIL LOW (mV) 85°C 35 30 25 25°C 20 -40°C 15 10 2.5 3.0 3.5 4.0 5.0 4.5 5.5 125°C 10 85°C 8 6 4 25°C -40°C 2 0 2.5 6.0 3.0 3.5 Output Voltage Swing vs.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. Phase Margin vs. Capacitive Load PSRR vs. Frequency 70 120 60 100 3.3V 50 5.0V PSRR (dB) PHASE(°) 80 40 30 5.0V -PSRR 60 3.3V 5.0V 40 20 +PSRR 20 10 3.3V 0 1 10 100 0 100 1000 1k CLOAD (pF) CMRR vs. Frequency Channel Separation vs.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. Small Signal Step Response with Gain = 10 20 mV/DIV 20 mV/DIV Small Signal Step Response with Gain = 1 f = 250 kHz f = 250 kHz AV = +1 AV = +10 VIN = 100 mVPP VIN = 10 mVPP 400 ns/DIV 400 ns/DIV Figure 35. Figure 36. Slew Rate vs. Supply Voltage Overshoot vs. Capacitive Load 5.0 40 4.8 4.8 4.6 4.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. THD+N vs. Amplitude ROUT vs. Frequency 1k 10 AV = 10x AV = 100x ROUT (:) THD + N (%) 100 VS = 3.3V 1 AV = 1x 0.1 10 1 AV = 10x 0.01 0.1 f = 1 kHz BW = >500 kHz 0.001 1m 10m 100m AV = 1x VS = 5.0V 1 0.01 100 10 1k 10k 100k 1M 10M FREQUENCY (Hz) VOUT (VPP) Figure 41. Figure 42. EMIRR IN+ vs.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 Typical Performance Characteristics (continued) At TA = 25°C, RL = 10 kΩ, VS = 3.3V, unless otherwise specified. EMIRR IN+ vs. Frequency at 3.3V EMIRR IN+ vs. Frequency at 5.0V 100 100 90 125°C 80 70 EMIRR V_PEAK (dB) EMIRR V_PEAK (dB) 90 85°C 60 50 25°C 40 20 10 VS = 3.3V VPEAK = -20 dBVp 100 85°C 70 60 50 25°C 40 -40°C 30 125°C 80 1000 10000 -40°C 30 20 10 FREQUENCY (MHz) Figure 47. VS = 5.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com APPLICATION INFORMATION INTRODUCTION The LMV851/LMV852/LMV854 are operational amplifiers with very good specifications, such as low offset, low noise and a rail-to-rail output. These specifications make the LMV851/LMV852/LMV854 great choices to use in areas such as medical and instrumentation. The low supply current is perfect for battery powered equipment.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 The configuration is largely the usually applied balanced configuration. With potentiometer P1, the balance can be tuned to compensate for the DC offset in the DUT. The main difference is the addition of the buffer. This buffer prevents the open-loop output impedance of the DUT from affecting the balance of the feedback network. Now the closed-loop output impedance of the buffer is a part of the balance.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com EMIRR With the increase of RF transmitting devices in the world, the electromagnetic interference (EMI) between those devices and other equipment becomes a bigger challenge. The LMV851/LMV852/LMV854 are EMI hardened op amps which are specifically designed to overcome electromagnetic interference. Along with EMI hardened op amps, the EMIRR parameter is introduced to unambiguously specify the EMI performance of an op amp.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 be a 50Ω stripline in order to match the RF impedance of the cabling and the RF generator. On the PCB a 50Ω termination is used. This 50Ω resistor is also used to set the bias level of the IN+ pin to ground level. For determining the EMIRR, two measurements are needed: one is measuring the DC output level when the RF signal is off; and the other is measuring the DC output level when the RF signal is switched on.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com The difference between the two types of dual op amps is clearly visible. The typical standard dual op amp has an output shift (disturbed signal) larger than 1V as a result of the RF signal transmitted by the cell phone. The LMV852, EMI hardened op amp does not show any significant disturbances. DECOUPLING AND LAYOUT Care must be given when creating a board layout for the op amp.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 R1 2.4 k: VDD VDD PRESSURE SENSOR + LMV852 - + R2 100: ADC LMV852 + VOUT VS Figure 55. Pressure Sensor Application THERMOCOUPLE AMPLIFIER The following circuit is a typical example for a thermocouple amplifier application using an LMV851/LMV852, or LMV854. A thermocouple converts a temperature into a voltage. This signal is then amplified by the LMV851/LMV852, or LMV854.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.com THERMOCOUPLE VOLTAGE (mV) 50 40 30 20 10 0 -10 -200 0 200 400 600 800 1000 1200 TEMPERATURE (°C) Figure 56. K-Type Thermocouple Response Thermocouple Example For this example, suppose the range of interest is 0°C to 500°C, and the resolution needed is 0.5°C. The power supply for both the LMV851/LMV852, or LMV854 and the ADC is 3.3V. The temperature range of 0°C to 500°C results in a voltage range from 0 mV to 20.
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LMV851, LMV852, LMV854 www.ti.com SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 Cold Junction Temperature RG LM35 RF T Metal A Copper Metal B Thermocouple - RG LMV851 + Copper Amplified Thermocouple Output RF Cold Junction Reference Figure 57.
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LMV851, LMV852, LMV854 SNOSAW1A – OCTOBER 2007 – REVISED MARCH 2013 www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.
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PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing LMV851MG/NOPB SC70 DCK 5 LMV851MGE/NOPB SC70 DCK LMV851MGX/NOPB SC70 DCK LMV852MM/NOPB VSSOP LMV852MME/NOPB SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 5 250 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3 5 3000 178.0 8.4 2.25 2.45 1.
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PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LMV851MG/NOPB SC70 DCK 5 1000 210.0 185.0 35.0 LMV851MGE/NOPB SC70 DCK 5 250 210.0 185.0 35.0 LMV851MGX/NOPB SC70 DCK 5 3000 210.0 185.0 35.0 LMV852MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0 LMV852MME/NOPB VSSOP DGK 8 250 210.0 185.0 35.0 LMV852MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.
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