Datasheet
LPV511
www.ti.com
SNOSAG7C –AUGUST 2005–REVISED MARCH 2013
3V Electrical Characteristics
(1)
Unless otherwise specified, all limits are specified for T
J
= 25°C, V
+
= 3V, V
−
= 0V, V
CM
= V
O
= V
+
/2, and R
L
= 100 kΩ to V
+
/2 .
Boldface limits apply to the temperature range of −40°C to 85°C.
Symbol Parameter Conditions Min Typ Max Units
(2) (3) (2)
V
OS
Input Offset Voltage ±0.2 ±3
mV
±3.8
TC V
OS
Input Offset Voltage Drift See
(4)
±0.3 ±15 μV/°C
I
B
Input Bias Current
(5)
V
CM
= 0.5V −1000 −320
–1600
pA
V
CM
= 2.5V 110 800
1900
I
OS
Input Offset Current ±10 pA
CMRR Common Mode Rejection Ratio V
CM
Stepped from 0V to 1.5V 77 100
70
V
CM
Stepped from 2.4V to 3V 75 115
dB
68
V
CM
Stepped from 0.5V to 2.5V 60 80
56
PSRR Power Supply Rejection Ratio V
+
= 2.7V to 5V, V
CM
= 0.5V 72 114
68
V
+
= 3V to 5V, V
CM
= 0.5V 76 115
dB
72
V
+
= 5V to 12V, V
CM
= 0.5V 84 117
80
CMVR Input Common-Mode Voltage CMRR ≥ 50 dB −0.1 3.1
V
Range 0 3.0
A
VOL
Large Signal Voltage Gain Sinking, V
O
= 2.5V
75
105 dB
70
Sourcing, V
O
= 0.5V
V
O
Output Swing High V
ID
= 100 mV 2.85 2.90
V
2.8
Output Swing Low V
ID
= −100 mV 100 150
mV
200
I
SC
Output Short Circuit Current
(6)
Sourcing −500 −225
V
ID
= 100 mV
µA
Sinking 225 1350
V
ID
= −100 mV
I
S
Supply Current 0.88 1.2
µA
1.5
SR Slew Rate
(7)
A
V
= +1, V
O
ramps from 0.5V to 2.5V 5.25
7.7 V/ms
3.10
GBW Gain Bandwidth Product R
L
= 1 MΩ, C
L
= 50 pF 27 kHz
Phase Margin R
L
= 1 MΩ, C
L
= 50 pF 53 deg
e
n
Input-Referred Voltage Noise f = 100 Hz 320 nV/√Hz
i
n
Input-Referred Current Noise f = 10 Hz .02
pA/√Hz
f = 1 kHz .01
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by
dividing the change in V
OS
at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short Circuit Test is a momentary test. See Note 4 in the Absolute Maximum Ratings Table.
(7) Slew rate is the average of the rising and falling slew rates.
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