Datasheet

MSP430AFE2x3
MSP430AFE2x2
MSP430AFE2x1
www.ti.com SLAS701A –NOVEMBER 2010–REVISED MARCH 2011
SD24_A, External Reference Input
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
V
REF(I)
Input voltage range SD24REFON = 0 3 V 1.0 1.25 1.5 V
I
REF(I)
Input current SD24REFON = 0 3 V 50 nA
USART0
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
USART
USART clock frequency 8 MHz
t
(τ)
USART0: deglitch time
(1)
V
CC
= 3 V, SYNC = 0, UART mode 150 280 500 ns
(1) The signal applied to the USART0 receive signal/terminal (URXD0) should meet the timing requirements of t
(τ)
to ensure that the URXS
flip-flop is set. The URXS flip-flop is set with negative pulses meeting the minimum-timing condition of t
(τ)
. The operating conditions to
set the flag must be met independently from this timing constraint. The deglitch circuitry is active only on negative transitions on the
URXD0 line.
Timer_A3
PARAMETER TEST CONDITIONS V
CC
MIN TYP MAX UNIT
f
TA
Timer_A3 clock frequency SMCLK, Duty cycle = 50% ± 10% f
SYSTEM
MHz
t
TA,cap
Timer_A3, capture timing TA0, TA1 3 V 20 ns
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
TEST
PARAMETER V
CC
MIN TYP MAX UNIT
CONDITIONS
V
CC(PGM/ERASE)
Program and erase supply voltage 2.2 3.6 V
f
FTG
Flash timing generator frequency 257 476 kHz
I
PGM
Supply current from V
CC
during program 2.2 V/3.6 V 1 5 mA
I
ERASE
Supply current from V
CC
during erase 2.2 V/3.6 V 1 7 mA
t
CPT
Cumulative program time
(1)
2.2 V/3.6 V 10 ms
t
CMErase
Cumulative mass erase time 2.2 V/3.6 V 20 ms
Program/erase endurance 10
4
10
5
cycles
t
Retention
Data retention duration T
J
= 25°C 100 years
t
Word
Word or byte program time
(2)
30 t
FTG
t
Block, 0
Block program time for first byte or word
(2)
25 t
FTG
Block program time for each additional byte or
t
Block, 1-63
(2)
18 t
FTG
word
t
Block, End
Block program end-sequence wait time
(2)
6 t
FTG
t
Mass Erase
Mass erase time
(2)
10593 t
FTG
t
Seg Erase
Segment erase time
(2)
4819 t
FTG
(1) The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2) These values are hardwired into the flash controller's state machine (t
FTG
= 1 / f
FTG
).
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