Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - In-amp, Op-amp InAmp TO 99 8

Low Noise Precision

Difet

OPERATIONAL AMPLIFIER

FEATURES

● LOW NOISE: 100% Tested, 8nV√Hz max

(10kHz)

● LOW BIAS CURRENT: 1pA max

● LOW OFFSET: 250

µV max

● LOW DRIFT: 1

µV/°C max

● HIGH OPEN-LOOP GAIN: 120dB min

● HIGH COMMON-MODE REJECTION:

100dB min

APPLICATIONS

● PRECISION INSTRUMENTATION

● DATA ACQUISITION

● TEST EQUIPMENT

● OPTOELECTRONICS

● MEDICAL EQUIPMENT—CAT SCANNER

● RADIATION HARD EQUIPMENT

International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706

Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

BIFET

National Semiconductor Corp.,

Difet

Burr-Brown Corp.

OPA111

Case and

Substrate

Output

Trim

Noise-Free Cascode

Trim

+In

–In

–V

10kΩ

*Patented

2kΩ2kΩ

2kΩ

DESCRIPTION

The OPA111 is a precision monolithic dielectrically

isolated FET (

Difet

) operational amplifier. Outstand-

ing performance characteristics allow its use in the

most critical instrumentation applications.

Noise, bias current, voltage offset, drift, open-loop

gain, common-mode rejection, and power supply re-

jection are superior to BIFET

amplifiers.

Very low bias current is obtained by dielectric isola-

tion with on-chip guarding.

Laser trimming of thin-film resistors gives very low

offset and drift. Extremely low noise is achieved with

patented circuit design techniques. A new cascode

design allows high precision input specifications and

reduced susceptibility to flicker noise.

Standard 741 pin configuration allows upgrading of

existing designs to higher performance levels.

SBOS138

Summary of content (14 pages)

PAGE 1
® OPA111 Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV√Hz max (10kHz) ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 1pA max LOW OFFSET: 250µV max LOW DRIFT: 1µV/°C max HIGH OPEN-LOOP GAIN: 120dB min HIGH COMMON-MODE REJECTION: 100dB min ● OPTOELECTRONICS ● MEDICAL EQUIPMENT—CAT SCANNER ● RADIATION HARD EQUIPMENT DESCRIPTION The OPA111 is a precision monolithic dielectrically isolated FET (Difet ®)
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SPECIFICATIONS ELECTRICAL At VCC = ±15VDC and TA = +25°C unless otherwise noted. OPA111AM PARAMETER CONDITION MIN OPA111BM TYP MAX 40 15 8 6 0.7 1.6 9.5 0.5 MIN OPA111SM TYP MAX 80 40 15 8 1.2 3.3 15 0.8 30 11 7 6 0.6 1.2 7.5 0.4 ±100 ±2 110 ±3 ±500 ±5 MIN TYP MAX UNITS 60 30 12 8 1 2.5 12 0.6 40 15 8 6 0.7 1.6 9.5 0.5 80 40 15 8 1.2 3.3 15 0.8 nV/√Hz nV/√Hz nV/√Hz nV/√Hz µVrms µVp-p fAp-p fA/√Hz ±250 ±1 ±10 ±100 ±2 110 ±3 ±500 ±5 ±31 ±50 ±0.
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ELECTRICAL (FULL TEMPERATURE RANGE SPECIFICATIONS) At VCC = ±15VDC and TA = TMIN to TMAX unless otherwise noted. OPA111AM PARAMETER CONDITION MIN Ambient Temp. –25 TYP OPA111BM MAX MIN +85 –25 TYP OPA111SM MAX MIN +85 –55 TYP MAX UNITS +125 °C ±1500 ±5 ±50 µV µV/°C dB µV/V TEMPERATURE RANGE Specification Range INPUT OFFSET VOLTAGE(1) Input Offset Voltage Average Drift Supply Rejection VCM = 0VDC VCC = ±10V to ±18V 86 ±220 ±2 100 ±10 ±1000 ±5 ±500 ±1 ±50 ±110 ±0.
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DICE INFORMATION PAD FUNCTION 1 2 3 4 5 6 7 8 Offset Trim –In +In –VS Offset Trim Output +VS Substrate Substrate Bias: This Dielectrically-Isolated Substrate is normally connected to common. MECHANICAL INFORMATION Die Size Die Thickness Min. Pad Size OPA111AD DIE TOPOGRAPHY MILS (0.001") MILLIMETERS 95 x 71 ±5 20 ±3 4x4 2.41 x 1.80 ±0.13 0.51 ±0.08 0.10 x 0.10 Backing: Transistor Count: None 44 TYPICAL PERFORMANCE CURVES TA = +25°C, VCC = ±15VDC unless otherwise noted.
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TYPICAL PERFORMANCE CURVES (CONT) TA = +25°C, VCC = ±15VDC unless otherwise noted. TOTAL* INPUT VOLTAGE NOISE SPECTRAL DENSITY vs SOURCE RESISTANCE TOTAL* INPUT VOLTAGE NOISE (PEAK-TO-PEAK) vs SOURCE RESISTANCE 1k 1k Voltage Noise (nV/ Hz) RS = 10MΩ Voltage Noise (µVp-p) RS = 1MΩ 100 RS = 100kΩ BM 10 RS = 100Ω *Includes contribution from source resistance. *Includes contribution from source resistance. 100 BM fB = 0.1Hz to 10Hz 10 1 1 0.
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TYPICAL PERFORMANCE CURVES (CONT) TA = +25°C, VCC = ±15VDC unless otherwise noted.
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TYPICAL PERFORMANCE CURVES (CONT) TA = +25°C, VCC = ±15VDC unless otherwise noted. COMMON-MODE REJECTION vs INPUT COMMON-MODE VOLTAGE MAXIMUM UNDISTORTED OUTPUT VOLTAGE vs FREQUENCY 120 Common-Mode Rejection (dB) Output Voltage (Vp-p) 30 20 10 10k 100k 100 90 80 70 –15 0 1k 110 1M –10 Frequency (Hz) 15 100 40 Settling Time (µs) 80 20 0 –20 60 0.01% 40 0.
PAGE 8
TYPICAL PERFORMANCE CURVES (CONT) TA = +25°C, VCC = ±15VDC unless otherwise noted. INPUT OFFSET VOLTAGE CHANGE DUE TO THERMAL SHOCK Offset Voltage Change (µV) 150 AM 75 BM 0 25°C 85°C TA = 25°C to TA = 85°C Air Environment –75 –150 –1 0 1 2 3 4 5 Time From Thermal Shock (Minutes) APPLICATIONS INFORMATION 2 I IN OFFSET VOLTAGE ADJUSTMENT Input Current (mA) The OPA111 offset voltage is laser-trimmed and will require no further trim for most applications.
PAGE 9
should completely surround the high impedance input leads and should be connected to a low impedance point which is at the signal input potential. Voltage Noise Spectral Density, EO Typical at 1kHz (nV/ Hz) 1k The amplifier case should be connected to any input shield or guard via pin 8. This insures that the amplifier itself is fully surrounded by guard potential, minimizing both leakage and noise pickup (see Figure 3). If guarding is not required, pin 8 (case) should be connected to ground.
PAGE 10
–46dBm to –20dBm RF Input 1000pF RFC <1pF to prevent gain peaking. 10kΩ 100Ω 1000MΩ 2 OPA111 3 H-P HSCH-3486 eO 6 DC Output +15V 0.1µF Guard 1MΩ 8 2 eO ≈ 1200mVDC/µW H-P 5082-4204 Pin Photodiode Video bandwidth: DC to 50kHz Output 6 5 x 108V/W 0.1µF 3 0.01µF FIGURE 7. Zero-Bias Schottky Diode Square-Law RF Detector. 7 OPA111 4 1000MΩ –15V Circuit must be well shielded. FIGURE 10. Sensitive Photodiode Amplifier.
PAGE 11
10.5kΩ 0.03µF <1pF to prevent peaking Overload ≈ 0.1µW input 0.01µF 200MΩ +5VDC 73.2kΩ 365Ω 2 2 365Ω 6 Input 3 1µF 3 OPA111 6 20kΩ OPA111 0.01µF RT Pin Diode* Output 100kΩ 2 10kΩ 7 LM211 TTL Output 1 0.1µF *Silicon Detector Corp. SD-041-11-21-011 CT 3 Digital Common G = 26dB Midband FIGURE 15. High Sensitivity (under 1nW) Fiber Optic Receiver for 9600 Baud Manchester Data. FIGURE 14. RIAA Equalized Phono Preamplifier.
PAGE 12
IB = 1pA Gain = 100 CMRR ≈ 106dB RIN = 1013Ω 3 –In 6 OPA111 2 RF 2 25kΩ 3 25kΩ 25kΩ 5 5kΩ RG 101Ω 6 RF 5kΩ Burr-Brown INA105 Differential Amplifier 25kΩ 2 6 OPA111 3 +In Output 1 Differential Voltage Gain = 1 + 2RF/RG FIGURE 17. FET Input Instrumentation Amplifier. ≈10pF 10kΩ 1MΩ 2 8 IN914* 2 Input 3 2N4117* 3507J OPA111 6 Output 6 IN914* 8 30pF *Reverse polarity for negative peak detection. FIGURE 18. Low-Droop Positive Peak Detector. ® OPA111 3 12 0.
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PACKAGE OPTION ADDENDUM www.ti.
PAGE 14
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.