Datasheet

20mV/div
Time(1 s/div)m
+18V
-18V
C
L
R
L
Device
G=+1
R =10k
C =10pF
W
L
L
Time (20 s/div)m
20 mV/div
+18 V
-18 V
R 2 kW
F
=
R 2 kW
I
=
C
L
Device
G = 1-
R = R = 2 k
C = 10 pF
W
L
L
F
Time (5 s/div)m
5 V/div
V
IN
V
OUT
2 kW
20 kW
V
IN
V
OUT
Device
G = 10-
+18 V
-18 V
T
OR
Time (5 s/div)m
5 V/div
V
IN
V
OUT
2 kW
20 kW
V
IN
V
OUT
Device
G = 10-
+18 V
-18 V
T
OR
40
35
30
25
20
15
10
5
0
Overshoot (%)
0 100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Device
R =
I
10 kW
R
ISO
C
L
R
F
= 10 kW
+18 V
-18 V
G = 1-
R = 0 W
ISO
R = 25 W
ISO
R = 50 W
ISO
R = R = 10 kW
L F
Time(100 s/div)m
5V/div
+18V
-18V
37V
PP
SineWave
( 18.5V)±
Device
V
IN
V
OUT
OPA188
www.ti.com SBOS642A –MARCH 2013–REVISED MARCH 2013
TYPICAL CHARACTERISTICS (continued)
V
S
= ±18 V, V
CM
= V
S
/ 2, R
LOAD
= 10 kΩ connected to V
S
/ 2, and C
L
= 100 pF, unless otherwise noted.
Figure 26. SMALL-SIGNAL OVERSHOOT vs Figure 27. NO PHASE REVERSAL
CAPACITIVE LOAD (100-mV Output Step)
Figure 28. POSITIVE OVERLOAD RECOVERY Figure 29. NEGATIVE OVERLOAD RECOVERY
Figure 30. SMALL-SIGNAL STEP RESPONSE Figure 31. SMALL-SIGNAL STEP RESPONSE
(100 mV) (100 mV)
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