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standard warranty. Production processing does not necessarily include

testing of all parameters.

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FEATURES

● HIGH GAIN BANDWIDTH PRODUCT: 1.6GHz

● HIGH BANDWIDTH 275MHz (G = +10)

● LOW INPUT OFFSET VOLTAGE: ±0.25mV

● LOW INPUT BIAS CURRENT: 2pA

● LOW INPUT VOLTAGE NOISE: 4.8nV/

● HIGH OUTPUT CURRENT: 70mA

● FAST OVERDRIVE RECOVERY

APPLICATIONS

● WIDEBAND PHOTODIODE AMPLIFIER

● WAFER SCANNING EQUIPMENT

● ADC INPUT AMPLIFIER

● TEST AND MEASUREMENT FRONT END

● HIGH GAIN PRECISION AMPLIFIER

DESCRIPTION

The OPA657 combines a high gain bandwidth, low distortion,

voltage-feedback op amp with a low voltage noise JFET-input

stage to offer a very high dynamic range amplifier for high

precision ADC (Analog-to-Digital Converter) driving or wideband

transimpedance applications. Photodiode applications will see

improved noise and bandwidth using this decompensated,

high gain bandwidth amplifier.

Very low level signals can be significantly amplified in a single

OPA657 gain stage with exceptional bandwidth and accuracy.

Having a high 1.6GHz gain bandwidth product will give

> 10MHz signal bandwidths up to gains of 160V/V (44dB). The

very low input bias current and capacitance will support this

performance even for relatively high source impedances.

Broadband photodetector applications will benefit from the low

voltage noise JFET inputs for the OPA657. The JFET input

contributes virtually no current noise while for broadband

applications, a low voltage noise is also required. The low

4.8nV/

input voltage noise will provide exceptional input

sensitivity for higher bandwidth applications. The example

shown below will give a total equivalent input noise current of

1.8pA/

over a 10MHz bandwidth.

OPA657

SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008

1.6GHz, Low-Noise, FET-Input

OPERATIONAL AMPLIFIER

SLEW VOLTAGE

BW RATE NOISE

DEVICE (V) (MHz) (V/

µS) (nV/√HZ) AMPLIFIER DESCRIPTION

OPA355 +5 200 300 5.80 Unity-Gain Stable CMOS

OPA655 ±5 400 290 6 Unity-Gain Stable FET-Input

OPA656 ±5 500 170 7 Unity-Gain Stable FET-Input

OPA627 ±15 16 55 4.5 Unity-Gain Stable FET-Input

THS4601 ±15 180 100 5.4 Unity-Gain Stable FET-Input

RELATED OPERATIONAL AMPLIFIER PRODUCTS

OPA657

Wideband Photodiode Transimpedance Amplifier

(12pF)

–V

200kΩ

0.1pF

Frequency

200kΩ TRANSIMPEDANCE BANDWIDTH

116

106

100kHz 1MHz 10MHz 50MHz

Transimpedance Gain (dB)

10MHz Bandwidth

Summary of content (26 pages)

PAGE 1
OPA657 OPA 657 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA657 combines a high gain bandwidth, low distortion, voltage-feedback op amp with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high precision ADC (Analog-to-Digital Converter) driving or wideband transimpedance applications.
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ELECTROSTATIC DISCHARGE SENSITIVITY ABSOLUTE MAXIMUM RATINGS(1) Supply Voltage ................................................................................. ±6.5V Internal Power Dissipation ........................... See Thermal Characteristics Differential Input Voltage ..................................................................... ±VS Input Voltage Range ............................................................................ ±VS Storage Temperature Range .................................
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ELECTRICAL CHARACTERISTICS: VS = ±5V RF = 453Ω, RL = 100Ω, and G = +10, unless otherwise noted. Figure 1 for AC performance. OPA657U, N (Standard-Grade) TYP PARAMETER AC PERFORMANCE (Figure 1) Small-Signal Bandwidth Gain-Bandwidth Product Bandwidth for 0.1dB flatness Peaking at a Gain of +7 Large-Signal Bandwidth Slew Rate Rise-and-Fall Time Settling Time to 0.
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ELECTRICAL CHARACTERISTICS: VS = ±5V: High Grade DC Specifications(1) RF = 453Ω, RL = 100Ω, and G = +10, unless otherwise noted. OPA657UB, NB (High-Grade) TYP PARAMETER Input Offset Voltage Input Offset Voltage Drift Input Bias Current Input Offset Current Common-Mode Rejection Ratio (CMRR) Power-Supply Rejection Ratio (+PSRR) (–PSRR) MIN/MAX OVER TEMPERATURE CONDITIONS +25°C +25°C(2) VCM = 0V VCM = 0V VCM = 0V VCM = 0V VCM = ±0.5V +VS = 4.5V to 5.5V –VS = –4.5V to –5.5V ±0.1 ±2 ±1 ±0.5 98 82 74 ±0.
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TYPICAL CHARACTERISTICS: VS = ±5V TA = +25°C, G = +10, RF = 453Ω, RL = 100Ω, unless otherwise noted. NONINVERTING SMALL-SIGNAL FREQUENCY RESPONSE 9 9 VO = 0.2Vp-p 6 3 0 –3 G = +10 –6 –9 G = +20 –12 –15 See Figure 1 VO = 0.2Vp-p RG = 50Ω 6 G = +7 Normalized Gain (dB) 0 –3 G = –20 –6 –9 –12 G = –50 –15 G = +50 –18 See Figure 2 –18 –21 –21 0.5 1 10 Frequency (MHz) 100 500 0.5 1 10 Frequency (MHz) NONINVERTING LARGE-SIGNAL FREQUENCY RESPONSE 26 G = +10 23 20 32 VO = 0.
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TYPICAL CHARACTERISTICS: VS = ±5V (Cont.) TA = +25°C, G = +10, RF = 453Ω, RL = 100Ω, unless otherwise noted. HARMONIC DISTORTION vs LOAD RESISTANCE HARMONIC DISTORTION vs OUTPUT VOLTAGE (5MHz) –60 2nd Harmonic –65 VO = 2Vp-p f = 5MHz –65 –70 Harmonic Distortion (dBc) Harmonic Distortion (dBc) –60 –75 3rd Harmonic –80 –85 –90 –95 –100 See Figure 1 –105 –70 f = 5MHz RL = 200Ω 2nd Harmonic See Figure 1 3rd Harmonic –75 –80 –85 –90 –95 –100 –110 –105 100 1k 0.
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TYPICAL CHARACTERISTICS: VS = ±5V (Cont.) TA = +25°C, G = +10, RF = 453Ω, RL = 100Ω, unless otherwise noted. 2-TONE, 3RD-ORDER INTERMODULATION SPURIOUS INPUT CURRENT AND VOLTAGE NOISE DENSITY –50 PI 3rd-Order Spurious Level (dBc) 10 Input Voltage Noise 4.8nV/√Hz Input Current Noise 1.
PAGE 8
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.) TA = +25°C, G = +10, RF = 453Ω, RL = 100Ω, unless otherwise noted. TYPICAL INPUT OFFSET VOLTAGE DRIFT OVER TEMPERATURE TYPICAL INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE 1.0 2.0 Input Bias Current (pA) Input Offset Voltage (mV) 1.5 0.5 0 –0.5 1.0 0.5 0 –0.5 –1.0 –1.5 –1.0 –2.
PAGE 9
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.) TA = +25°C, G = +10, RF = 453Ω, RL = 100Ω, unless otherwise noted. CLOSED-LOOP OUTPUT IMPEDANCE vs FREQUENCY OUTPUT VOLTAGE AND CURRENT LIMITATIONS 10 5 4 1W Internal Power OPA657 VO (V) 2 1 Output Impedance (Ω) 3 RL = 100Ω RL = 50Ω 0 RL = 25Ω –1 –2 ZO 453Ω 1 50Ω 0.1 –3 –4 –5 –100 –80 1W Internal Power –60 –40 –20 0 20 40 60 80 0.01 0.
PAGE 10
APPLICATIONS INFORMATION WIDEBAND, NON-INVERTING OPERATION The OPA657 provides a unique combination of low input voltage noise, very high gain bandwidth, and the DC precision of a trimmed JFET-input stage to give an exceptional high input impedance, high gain stage amplifier. Its very high Gain Bandwidth Product (GBP) can be used to either deliver high signal bandwidths at high gains, or to extend the achievable bandwidth or gain in photodiode-transimpedance applications.
PAGE 11
WIDEBAND, HIGH SENSITIVITY, TRANSIMPEDANCE DESIGN The high GBP and low input voltage and current noise for the OPA657 make it an ideal wideband-transimpedance amplifier for moderate to high transimpedance gains. Unity-gain stability in the op amp is not required for application as a transimpedance amplifier. One transimpedance design example is shown on the front page of the data sheet.
PAGE 12
For the values shown in Figure 4, the f–3dB will be approximately 130MHz. This is less than that predicted by simply dividing the GBP product by NG1. The compensation network controls the bandwidth to a lower value while providing the full slew rate at the output and an exceptional distortion performance due to increased loop gain at frequencies below NG1 • Z0. The capacitor values shown in Figure 4 are calculated for NG1 = 3 and NG2 = 10.5 with no adjustment for parasitics.
PAGE 13
DESIGN-IN TOOLS DEMONSTRATION FIXTURES Two printed circuit boards (PCBs) are available to assist in the initial evaluation of circuit performance using the OPA657 in its two package options. Both of these are offered free of charge as unpopulated PCBs, delivered with a user's guide. The summary information for these fixtures is shown in Table I.
PAGE 14
the signal gain is –(RF/RG) while the noise gain for bandwidth purposes is (1 + RF/RG). This cuts the noise gain in half, increasing the minimum stable gain for inverting operation under these condition to –12 and the equivalent gain bandwidth product to 3.2GHz. DRIVING CAPACITIVE LOADS One of the most demanding and yet very common load conditions for an op amp is capacitive loading.
PAGE 15
impedances > 750kΩ. This would also be the feedback resistor value for transimpedance applications (Figure 3) where the output DC error due to inverting input bias current is on the order of that contributed by the input offset voltage. In general, except for these extremely high-impedance values, the output DC errors due to the input bias current may be neglected. After the input offset voltage itself, the most significant term contributing to output offset voltage is the PSRR for the negative supply.
PAGE 16
b) Minimize the distance (< 0.25”) from the power-supply pins to high-frequency 0.1µF decoupling capacitors. At the device pins, the ground and power plane layout should not be in close proximity to the signal I/O pins. Avoid narrow power and ground traces to minimize inductance between the pins and the decoupling capacitors. The power-supply connections should always be decoupled with these capacitors. Larger (2.2µF to 6.
PAGE 17
Revision History DATE REVISION PAGE 12/08 E 2 3/06 D 13 SECTION DESCRIPTION Absolute Maximum Ratings Changed minimum Storage Temperature Range from −40°C to −65°C. Design-In Tools Added Design-In Tools paragraph and table. NOTE: Page numbers for previous revisions may differ from page numbers in the current version. OPA657 SBOS197E www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 6-Jun-2013 Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.
PAGE 20
PACKAGE MATERIALS INFORMATION www.ti.com 5-Jun-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) OPA657N/250 SOT-23 DBV 5 250 180.0 OPA657NB/250 SOT-23 DBV 5 250 OPA657U/2K5 SOIC D 8 2500 B0 (mm) K0 (mm) P1 (mm) 8.4 3.2 3.1 1.39 4.0 180.0 8.4 3.2 3.1 1.39 330.0 12.4 6.4 5.2 2.1 Pack Materials-Page 1 W Pin1 (mm) Quadrant 8.0 Q3 4.0 8.0 Q3 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 5-Jun-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) OPA657N/250 SOT-23 DBV 5 250 210.0 185.0 35.0 OPA657NB/250 SOT-23 DBV 5 250 210.0 185.0 35.0 OPA657U/2K5 SOIC D 8 2500 367.0 367.0 35.
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