Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp J-FET SON 8 (3x3)

A659

FEATURES DESCRIPTION

APPLICATIONS

TRANSIMPEDANCEGAIN

vsFREQUENCY(C =22pF)

130

120

110

100

ransimpedanceGain (dB )

100k

10M 100M

Frequency(Hz)

R =1M ,C =Open

F F

R =1k ,C =4.7pF

F F

R =10k ,

C =Open

R =10k ,C =1.5pF

F F

R =100k ,C =Open

F F

R =100k ,

C =0.5pF

R =1k ,C =Open

F F

OPA659

+6V

OUT

0.1 Fm 10 Fm

-6V

50 LoadW

OUT

Photo

Diode

-V

OPA659

www.ti.com

............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009

Wideband, Unity-Gain Stable, JFET-Input

OPERATIONAL AMPLIFIER

• HIGH BANDWIDTH: 650MHz (G = +1V/V)

The OPA659 combines a very wideband, unity-gain

stable, voltage-feedback operational amplifier with a

• HIGH SLEW RATE: 2550V/ µ s (4V Step)

JFET-input stage to offer an ultra-high dynamic range

• EXCELLENT THD: – 78dBc at 10MHz

amplifier for high impedance buffering in data

• LOW INPUT VOLTAGE NOISE: 8.9nV/ √ Hz

acquisition applications such as oscilloscope

• FAST OVERDRIVE RECOVERY: 8ns front-end amplifiers and machine vision applications

such as photodiode transimpedance amplifiers used

• FAST SETTLING TIME (1% 4V Step): 8ns

in wafer inspection.

• LOW INPUT OFFSET VOLTAGE: ± 1mV

The wide 650MHz unity-gain bandwidth is

• LOW INPUT BIAS CURRENT: ± 10pA

complemented by a very high 2550V/ µ s slew rate.

• HIGH OUTPUT CURRENT: 70mA

The high input impedance and low bias current

provided by the JFET input are supported by the low

8.9nV/ √ Hz input voltage noise to achieve a very low

• HIGH-IMPEDANCE DATA ACQUISITION INPUT

integrated noise in wideband photodiode

AMPLIFIER

transimpedance applications.

• HIGH-IMPEDANCE OSCILLOSCOPE INPUT

Broad transimpedance bandwidths are possible with

AMPLIFIER

the high 350MHz gain bandwidth product of this

• WIDEBAND PHOTODIODE TRANSIMPEDANCE

device.

AMPLIFIER

Where lower speed with lower quiescent current is

• WAFER SCANNING EQUIPMENT

required, consider the OPA656 . Where unity-gain

stability is not required, consider the OPA657 .

OPERATIONAL AMPLIFIER

PRODUCTS

VOLTAGE

SLEW

RATE NOISE AMPLIFIER

DEVICE (V) (MHz) (V/ µ s) (nV/ √ Hz) DESCRIPTION

Unity-Gain

OPA356 +5 200 300 5.80

Stable CMOS

Fixed Gain of

OPA653 ± 6 500 2675 6.1 +2V/V

JFET-Input

Unity-Gain

OPA656 ± 5 500 290 7 Stable

JFET-Input

Gain of +7

OPA657 ± 5 1600 700 4.8 Stable

JFET-Input

Unity-Gain

OPA627 ± 15 16 55 4.5 Stable

DI-FET-Input

Unity-Gain

THS4631 ± 15 105 900 7 Stable

JFET-Input

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2 PowerPAD is a trademark of Texas Instruments.

3 All other trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (32 pages)

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OPA659 OP A6 59 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION 1 • • • • • • • • • 23 HIGH BANDWIDTH: 650MHz (G = +1V/V) HIGH SLEW RATE: 2550V/µs (4V Step) EXCELLENT THD: –78dBc at 10MHz LOW INPUT VOLTAGE NOISE: 8.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ELECTRICAL CHARACTERISTICS: VS = ±6V At RF = 0Ω, G = +1V/V, and RL = 100Ω, TA = +25°C, unless otherwise noted.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com ELECTRICAL CHARACTERISTICS: VS = ±6V (continued) At RF = 0Ω, G = +1V/V, and RL = 100Ω, TA = +25°C, unless otherwise noted. OPA659 PARAMETER CONDITIONS MIN TYP MAX UNIT TEST LEVEL (1) INPUT Common-Mode Input Range (3) Common-Mode Rejection Ratio TA = +25°C ±3 ±3.
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OPA659 www.ti.com ............................................................................................................................................
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS At VS = ±6V, RF = 0Ω, G = +1V/V, and RL = 100Ω, unless otherwise noted. NONINVERTING SMALL-SIGNAL FREQUENCY RESPONSE (VO = 200mVPP) 4 Normalized Signal Gain (dB) -4 G = +5V/V -8 G = +10V/V -10 VS = ±6.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 TYPICAL CHARACTERISTICS (continued) At VS = ±6V, RF = 0Ω, G = +1V/V, and RL = 100Ω, unless otherwise noted. NONINVERTING TRANSIENT RESPONSE (0.5V STEP) 0.3 VOUT VIN 0.2 0.1 0 -0.1 -0.2 0.5 0 -0.5 -1.0 -0.3 -1.5 0 10 20 30 40 50 0 20 30 Time (ns) Figure 7. Figure 8.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS (continued) At VS = ±6V, RF = 0Ω, G = +1V/V, and RL = 100Ω, unless otherwise noted. HARMONIC DISTORTION vs NONINVERTING GAIN AT 10MHz HARMONIC DISTORTION vs FREQUENCY -50 VS = ±6.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 TYPICAL CHARACTERISTICS (continued) At VS = ±6V, RF = 0Ω, G = +1V/V, and RL = 100Ω, unless otherwise noted.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com TYPICAL CHARACTERISTICS (continued) At VS = ±6V, RF = 0Ω, G = +1V/V, and RL = 100Ω, unless otherwise noted. FREQUENCY RESPONSE vs CAPACITIVE LOAD (RLOAD = 1kΩ) 5 OPEN-LOOP GAIN AND PHASE 60 CL = 10pF, RISO = 30.1W 50 CL = 100pF, RISO = 12.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 TYPICAL CHARACTERISTICS (continued) At VS = ±6V, RF = 0Ω, G = +1V/V, and RL = 100Ω, unless otherwise noted. TRANSIMPEDANCE GAIN vs FREQUENCY (CD = 100pF) 130 MAXIMUM/MINIMUM ±VOUT vs RLOAD 5 RF = 1MW, CF = Open 4 110 RF = 100kW, CF = Open RF = 1MW, CF = 0.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com APPLICATION INFORMATION Wideband, Noninverting Operation The OPA659 is a very broadband, unity-gain stable, voltage-feedback amplifier with a high impedance JFET-input stage.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Inverting Gain Operation The circuit of Figure 36 shows the inverting gain test circuit used for most of the inverting Typical Characteristics graphs.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com To achieve a maximally flat second-order Butterworth frequency response, the feedback pole should be set to: 1 = 2pRFCF GBP 4pRFCD (1) For example, adding the common mode and differential mode input capacitance (0.7 + 2.8 = 3.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 OPERATING SUGGESTIONS Setting Resistor Values to Minimize Noise The OPA659 provides a very low input noise voltage. To take full advantage of this low input noise, designers must pay careful attention to other possible noise contributors.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com Driving Capacitive Loads Distortion Performance One of the most demanding, and yet very common, load conditions for an op amp is capacitive loading.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Board Layout Achieving optimum performance with a high-frequency amplifier such as the OPA659 requires careful attention to PCB layout parasitics and external component types. Recommendations that can optimize device performance include the following.
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com well as a doubly-terminated line. If the input impedance of the destination device is low, there will be some signal attenuation as a result of the voltage divider formed by the series output into the terminating impedance. e) Socketing a high-speed part such as the OPA659 is not recommended.
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OPA659 www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 EVALUATION MODULE Schematic and PCB Layout Figure 40 is the OPA659EVM schematic. Layers 1 through 4 of the PCB are shown in Figure 41. It is recommended to follow the layout of the external components near to the amplifier, ground plane construction, and power routing as closely as possible.
PAGE 20
OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com Bill of Materials Table 4 lists the bill of material for the OPA659EVM as supplied from TI. Table 4. OPA659EVM Parts List ITEM 20 DESCRIPTION SMD SIZE REFERENCE DESIGNATOR QUANTITY MANUFACTURER PART NUMBER 1 Cap, 10.0µF, Tantalum, 10%, 35V D C1, C2 2 (AVX) TAJ106K035R 2 Cap, 0.
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OPA659 www.ti.com ............................................................................................................................................
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OPA659 SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (March, 2009) to Revision B .................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ OPA659IDBVR SOT-23 3000 180.0 DBV 5 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) 8.4 3.2 3.1 1.39 4.0 W Pin1 (mm) Quadrant 8.0 Q3 OPA659IDBVT SOT-23 DBV 5 250 180.0 8.4 3.2 3.1 1.39 4.0 8.0 Q3 OPA659IDRBR SON DRB 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) OPA659IDBVR SOT-23 DBV 5 3000 210.0 185.0 35.0 OPA659IDBVT SOT-23 DBV 5 250 210.0 185.0 35.0 OPA659IDRBR SON DRB 8 3000 367.0 367.0 35.0 OPA659IDRBT SON DRB 8 250 210.0 185.0 35.
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