Datasheet
REF1112
2
SBOS283C
www.ti.com
REVERSE BREAKDOWN VOLTAGE I
REF
= 1.2µA
1.2475 1.25 1.2525 V
–0.2 +0.2 %
TEMPERATURE COEFFICIENT
1.2µA ≤ I
REF
≤ 5mA, 0°C to +70°C1030ppm/°C
1.5µA ≤ I
REF
≤ 5mA, –40°C to +85°C1550ppm/°C
1.5µA ≤ I
REF
≤ 5mA, –40°C to +125°C15 ppm/°C
MINIMUM OPERATING CURRENT 1 1.2 µA
REVERSE BREAKDOWN VOLTAGE 30 100 ppm/mA
CHANGE WITH CURRENT 1.2µA ≤ I
REF
≤ 5mA
REVERSE DYNAMIC IMPEDANCE 1.2µA ≤ I
REF
≤ 5mA 0.037 0.125 Ω
LOW-FREQUENCY NOISE
(1)
0.1Hz ≤ I
REF
≤ 10Hz 25 µV
PP
THERMAL HYSTERESIS
(2)
100 ppm
LONG-TERM STABILITY
+25°C ± 0.1°C 60 ppm/kHr
TEMPERATURE CHARACTERISTICS
Specified Range –40 +125 °C
Operating Range –40 +125 °C
Storage Range –40 +150 °C
Thermal Resistance
θ
JA
SOT23-3 Surface-Mount 135 °C/W
(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz.
(2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range,
and returning to +25°C.
Reverse Breakdown Current ............................................................ 10mA
Forward Current ................................................................................ 10mA
Operating Temperature .................................................. –55°C to +125°C
Storage Temperature ...................................................... –65°C to +150°C
Junction Temperature .................................................................... +150°C
(1) Stresses above these ratings may cause permanent damage. Exposure to
absolute maximum conditions for extended periods may degrade device
reliability. These are stress ratings only, and functional operation of the device
at these or any other conditions beyond those specified is not implied.
ABSOLUTE MAXIMUM RATINGS
(1)
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from
performance degradation to complete device failure. Texas
Instruments recommends that all integrated circuits be handled
and stored using appropriate ESD protection methods.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet published speci-
fications.
PACKAGE/ORDERING INFORMATION
(1)
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at
www.ti.com.
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
REF1112 SOT23-3 DBZ –40°C to +125°C R11A REF1112AIDBZT Tape and Reel, 250
"" " ""REF1112AIDBZR Tape and Reel, 3000
ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, T
A
= –40°C to +125°C.
At T
A
= +25°C, I
REF
= 1.2µA and C
LOAD
= 10nF, unless otherwise noted.
REF1112 - 1.25V
PARAMETER CONDITIONS MIN TYP MAX UNITS