Datasheet

REF1112
3
SBOS283C
www.ti.com
TYPICAL CHARACTERISTICS
At T
A
= +25°C, I
REF
= 10µA and C
LOAD
= 10nF, unless otherwise noted.
REVERSE CHARACTERISTICS
Reverse Voltage (V)
Reverse Current (µA)
0.750.500.25 1.00 1.25 1.500.00
100
10
1
0.1
0.01
1K
10K
−40°C ≤ T
A
≤ 125°C
Voltage Regulation
Region
FORWARD CHARACTERISTICS
Forward Voltage (V)
Forward Current (mA)
1.00.10.01
100.001
1.0
0.8
0.6
0.4
0.2
0.0
T
A
= 25°C
Behaves as standard
silicon diode
TEMPERATURE DRIFT
Temperature (°C)
Reverse Voltage (V)
5−15−35 25 45 65−55 85 105 125
1.255
1.254
1.253
1.252
1.251
1.250
1.249
1.248
REVERSE VOLTAGE CHANGE vs CURRENT
Reverse Current (mA)
Output Voltage Change (mV)
0.001
0.5
0.01 0.1 1 10
0.4
0.3
0.2
0.1
0.0
−40°C ≤ T
A
≤ 125°C
REVERSE DYNAMIC IMPEDANCE
Reverse Current (mA)
Dynamic Impedance (Ω)
0.10.010.001 1 10
0.1
0.01
1
10
100
−40°C ≤ T
A
≤ 125°C
f = 10Hz
REVERSE DYNAMIC IMPEDANCE
Frequency (Hz)
Dynamic Impedance (Ω)
100101 1k 10k
0.1
0.01
1
10
100
1k
10k
100k
T
A
= +25°C
I
REF
= 5mA
I
REF
= 10µA