Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - power management - special purpose 25 µA SOIC 28

HIA

LIA

LIB

HIB

LOB

HSB

HSA

LOA

HOA

HBA

HBB

HOBPGOOD

PGND

AGND

SIB

IOUT

SOB

SIA

IIN

SOA

VDD

VCCB

VCCA

SM72295

OVS

OVP

Vin

Vout

R13

500

40k

10k

10V

optional

BOUT

BIN

10 nF

0.47 uF

R15

10m

R10

R14

0.47 uF

R11

R16

10m

R12

500

C10

10n

SM72295

www.ti.com

SNVS688E –OCTOBER 2010–REVISED APRIL 2013

SM72295 Photovoltaic Full Bridge Driver

Check for Samples: SM72295

FEATURES

DESCRIPTION

The SM72295 is designed to drive 4 discrete N type

• Renewable Energy Grade

MOSFET’s in a full bridge configuration. The drivers

• Dual Half Bridge MOSFET Drivers

provide 3A of peak current for fast efficient switching

• Integrated 100V Bootstrap Diodes

and integrated high speed bootstrap diodes. Current

sensing is provided by 2 transconductance amplifiers

• Independent High and Low Driver Logic Inputs

with externally programmable gain and filtering to

• Bootstrap Supply Voltage Range up to 115V

remove ripple current to provide average current

information to the control circuit. The current sense

• Two Current Sense Amplifiers with Externally

amplifiers have buffered outputs available to provide

Programmable Gain and Buffered Outputs

a low impedance interface to an A/D converter if

needed. An externally programmable input over

• Programmable Over Voltage Protection

voltage comparator is also included to shutdown all

• Supply Rail Under-Voltage Lockouts with

outputs. Under voltage lockout with a PGOOD

Power Good Indicator

indicator prevents the drivers from operating if VCC is

too low.

PACKAGE

• SOIC-28

Typical Application Circuit

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (17 pages)

PAGE 1
SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 SM72295 Photovoltaic Full Bridge Driver Check for Samples: SM72295 FEATURES DESCRIPTION • • • • • The SM72295 is designed to drive 4 discrete N type MOSFET’s in a full bridge configuration. The drivers provide 3A of peak current for fast efficient switching and integrated high speed bootstrap diodes.
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SM72295 SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Connection Diagram 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SIA HSA SOA HOA IIN HBA BIN AGND LIA HIA SM72295 28 27 26 VCCA 25 LOA 24 PGND 23 LOB 22 21 HIB VCCB LIB HBB 20 PGOOD HOB 19 BOUT HSB IOUT VDD SOB OVS SIB OVP 18 17 16 15 Figure 1.
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SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 PIN DESCRIPTIONS (continued) Pin Name Description Application Information 19, 27 HOA, HOB High side gate driver output Connect to gate of high side MOSFET with a short low inductance path. 20,26 HBA, HBB High side gate driver bootstrap rail. Connect the positive terminal of the bootstrap capacitor to HB and the negative terminal to HS. The bootstrap capacitor should be placed as close to IC as possible.
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SM72295 SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Recommended Operating Conditions VCCA,VCCB +8V to +14V VDD +3V to 7V SI, SO common mode VDD+1V to 100V HS (1) -1V to 100V HBA, HBB HS+7V to HS+14V HS Slew Rate <50V/ns Junction Temperature (1) -40°C to +125°C In the application the HS nodes are clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not exceed –1V.
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SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 Electrical Characteristics(1) (continued) Specifications in standard typeface are for TJ = 25°C, and those in boldface type apply over the full operating junction temperature range. No load on LO & HO, VCC = 10V, VDD = 5V, HB-HS = 10V, OVS = 0V unless otherwise indicated. Symbol Parameter Conditions Min Typ Max Units LO & HO GATE DRIVER VOL Low-Level Output Voltage ILO = 100mA VOL = LO-PGND or HO-HS 0.16 0.
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SM72295 SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com HIB LIB HIA LIA Block Diagram HBB VCCB VDD UVLO HOB 3V DRIVER LEVEL SHIFT 3V 200k HSB HBA VCCA UVLO VDD PGOOD 50k VCC UVLO HOA DRIVER LEVEL SHIFT 3V HSA VCCA 3V VDD LOB DRIVER 50k PGND OVP VCCB 3V OVS LOA DRIVER + PGND VDD 3.3V/5V - SIA SIB SOA SOB + + _ _ IIN IOUT + _ + _ VDD CLAMP AGND VDD CLAMP BOUT BIN Figure 2.
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SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 Typical Performance Characteristics Operating Current vs Temperature VCC Undervoltage Rising Threshold vs Temperature Figure 3. Figure 4. VCC Quiescent Current vs Temperature VCC Undervoltage Threshold Hysteresis vs Temperature Figure 5. Figure 6. VDD Quiescent Current vs Temperature Gate Drive High Level Output Voltage vs Temperature Figure 7. Figure 8.
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SM72295 SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Typical Performance Characteristics (continued) 8 Gate Drive Low level Output Voltage vs Temperature Bootstrap Diode Forward Voltage vs Temperature Figure 9. Figure 10. Current Sense Amplifier Input Offset Voltage vs Temperature Current Sense Amplifier Output Buffer Offset Voltage vs Temperature Figure 11. Figure 12.
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SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 Timing Diagram LI LI HI tHPLH tLPLH HI tHPHL tLPHL LO LO HO HO tMON tMOFF Power Dissipation Considerations The total IC power dissipation is the sum of the gate driver losses and the bootstrap diode losses.
PAGE 10
SM72295 SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 www.ti.com Figure 14. Diode Power Dissipation VIN = 50V 0.100 POWER (W) CL = 4400 pF CL = 0 pF 0.010 0.001 1 10 100 1000 SWITCHING FREQUENCY (kHz) Layout Considerations The optimum performance of high and low-side gate drivers cannot be achieved without taking due considerations during circuit board layout. Following points are emphasized. 1.
PAGE 11
SM72295 www.ti.com SNVS688E – OCTOBER 2010 – REVISED APRIL 2013 REVISION HISTORY Changes from Revision D (April 2013) to Revision E • Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 18-Oct-2013 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PAGE 14
PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SM72295MAE/NOPB SOIC DW 28 250 178.0 24.4 10.8 18.4 3.2 12.0 24.0 Q1 SM72295MAX/NOPB SOIC DW 28 1000 330.0 24.4 10.8 18.4 3.2 12.0 24.
PAGE 15
PACKAGE MATERIALS INFORMATION www.ti.com 8-Apr-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SM72295MAE/NOPB SOIC DW SM72295MAX/NOPB SOIC DW 28 250 213.0 191.0 55.0 28 1000 367.0 367.0 45.
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